Inventor · disambiguated record
Hsing-Kan Peng
Also filed as: PENG HSING-KAN
2 granted patents·3 pending applications·11 citations·filing 2008–2023
55Inventor score
Top patents by PatentIndex Score
5 records- 0180US7911028B2Semiconductor device and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Mar 22, 2011·9 cites·20 claims
- 0269US8691705B2Method of patterning metal alloy material layer having hafnium and molybdenumHUANG CHIH-WEI·Filed 2011·Granted Apr 8, 2014·2 cites·5 claims
- 0356US2025126855A1Gate formation processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0451US2009146101A1Etchant for metal alloy having hafnium and molybdenumNANYA TECHNOLOGY CORP·Filed 2008·Application pending·0 cites
- 0535US2010025778A1Transistor structure and method of making the sameLAI CHAO-SUNG·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →