Inventor · disambiguated record
Randolph F. Knarr
Also filed as: KNARR RANDOLPH F · KNARR Randolph
26 granted patents·7 pending applications·261 citations·filing 1989–2022
96Inventor score
Top patents by PatentIndex Score
33 records- 0194US8089157B2Contact metallurgy structureCABRAL JR CYRIL·Filed 2010·Granted Jan 3, 2012·14 cites·12 claims
- 0294US7405154B2Structure and method of forming electrodeposited contactsIBM·Filed 2006·Granted Jul 29, 2008·20 cites·1 claims
- 0390US7851357B2Method of forming electrodeposited contactsIBM·Filed 2008·Granted Dec 14, 2010·13 cites·8 claims
- 0490US6622907B2Sacrificial seed layer process for forming C4 solder bumpsIBM·Filed 2002·Granted Sep 23, 2003·78 cites·20 claims
- 0587US7993987B1Surface cleaning using sacrificial getter layerIBM·Filed 2010·Granted Aug 9, 2011·8 cites·20 claims
- 0686US8101518B2Method and process for forming a self-aligned silicide contactCABRAL JR CYRIL·Filed 2008·Granted Jan 24, 2012·12 cites·27 claims
- 0784US8940634B2Overlapping contacts for semiconductor deviceENGEL BRETT H·Filed 2011·Granted Jan 27, 2015·8 cites·12 claims
- 0882US6661100B1Low impedance power distribution structure for a semiconductor chip packageIBM·Filed 2002·Granted Dec 9, 2003·32 cites·20 claims
- 0981US10037890B2Method for selectively etching with reduced aspect ratio dependenceLAM RES CORP·Filed 2016·Granted Jul 31, 2018·3 cites·18 claims
- 1079US8039382B2Method for forming self-aligned metal silicide contactsIBM·Filed 2009·Granted Oct 18, 2011·6 cites·10 claims
- 1177US7618891B2Method for forming self-aligned metal silicide contactsIBM·Filed 2006·Granted Nov 17, 2009·6 cites·22 claims
- 1271US7498256B2Copper contact via structure using hybrid barrier layerIBM·Filed 2006·Granted Mar 3, 2009·5 cites·1 claims
- 1370US7544610B2Method and process for forming a self-aligned silicide contactIBM·Filed 2004·Granted Jun 9, 2009·14 cites·34 claims
- 1466US9947547B2Environmentally green process and composition for cobalt wet etchIBM·Filed 2016·Granted Apr 17, 2018·1 cites·19 claims
- 1565US2025096036A1Selective deposition of graphene on cobalt-capped copper dual damascene interconnectLAM RES CORP·Filed 2022·Application pending·0 cites
- 1663US8592266B2Replacement gate MOSFET with a high performance gate electrodeLI ZHENGWEN·Filed 2010·Granted Nov 26, 2013·1 cites·12 claims
- 1763US2024213159A1Graphene-capped copper in dual damascene interconnectLAM RES CORP·Filed 2022·Application pending·0 cites
- 1862US6995475B2I/C chip suitable for wire bondingIBM·Filed 2003·Granted Feb 7, 2006·9 cites·3 claims
- 1961US10707132B2Method to recess cobalt for gate metal applicationIBM·Filed 2019·Granted Jul 7, 2020·0 cites·16 claims
- 2061US10615078B2Method to recess cobalt for gate metal applicationIBM·Filed 2019·Granted Apr 7, 2020·0 cites·17 claims
- 2160US5102456ATetra aza ligand systems as complexing agents for electroless deposition of copperIBM·Filed 1990·Granted Apr 7, 1992·21 cites·13 claims
- 2257US9337289B2Replacement gate MOSFET with a high performance gate electrodeGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·0 cites·12 claims
- 2355US10546785B2Method to recess cobalt for gate metal applicationIBM·Filed 2017·Granted Jan 28, 2020·0 cites·15 claims
- 2454US8969933B2Replacement gate MOSFET with a high performance gate electrodeIBM·Filed 2013·Granted Mar 3, 2015·0 cites·8 claims
- 2553US10541141B2Method for selectively etching with reduced aspect ratio dependenceLAM RES CORP·Filed 2018·Granted Jan 21, 2020·0 cites·20 claims
- 2650US6992389B2Barrier for interconnect and methodIBM·Filed 2004·Granted Jan 31, 2006·4 cites·10 claims
- 2749US2013241070A1Overlapping contacts for semiconductor deviceIBM·Filed 2013·Application pending·0 cites
- 2846US7572726B2Method of forming a bond pad on an I/C chip and resulting structureIBM·Filed 2005·Granted Aug 11, 2009·0 cites·15 claims
- 2943US2009152590A1Method and structure for semiconductor devices with silicon-germanium depositsIBM·Filed 2007·Application pending·0 cites
- 3039US2005026416A1Encapsulated pin structure for improved reliability of waferIBM·Filed 2003·Application pending·0 cites
- 3136US5059243ATetra aza ligand systems as complexing agents for electroless deposition of copperIBM·Filed 1989·Granted Oct 22, 1991·6 cites·41 claims
- 3234US2002190028A1Method of improving uniformity of etching of a film on an articleIBM·Filed 2001·Application pending·0 cites
- 3332US2016343806A1Interface passivation layers and methods of fabricatingGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Randolph F. Knarr files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →