Inventor · disambiguated record
Paul Edward Gee
Also filed as: GEE PAUL · GEE PAUL E · GEE PAUL EDWARD · GEE PAUL S
12 granted patents·8 pending applications·1,047 citations·filing 1996–2023
93Inventor score
Top patents by PatentIndex Score
20 records- 0198US7825038B2Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygenAPPLIED MATERIALS INC·Filed 2007·Granted Nov 2, 2010·249 cites·22 claims
- 0296US8664127B2Two silicon-containing precursors for gapfill enhancing dielectric linerBHATIA SIDHARTH·Filed 2011·Granted Mar 4, 2014·480 cites·19 claims
- 0396US7994019B1Silicon-ozone CVD with reduced pattern loading using incubation period depositionAPPLIED MATERIALS INC·Filed 2010·Granted Aug 9, 2011·40 cites·19 claims
- 0496US5994209AMethods and apparatus for forming ultra-shallow doped regions using doped silicon oxide filmsAPPLIED MATERIALS INC·Filed 1996·Granted Nov 30, 1999·161 cites·18 claims
- 0593US8236708B2Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursorKWESKIN SASHA·Filed 2010·Granted Aug 7, 2012·27 cites·14 claims
- 0684US6099647AMethods and apparatus for forming ultra-shallow doped regions using doped silicon oxide filmsAPPLIED MATERIALS INC·Filed 1999·Granted Aug 8, 2000·53 cites·19 claims
- 0779US8716154B2Reduced pattern loading using silicon oxide multi-layersBHATIA SIDHARTH·Filed 2011·Granted May 6, 2014·5 cites·19 claims
- 0873US8476142B2Preferential dielectric gapfillKWESKIN SASHA·Filed 2011·Granted Jul 2, 2013·4 cites·13 claims
- 0959US12315739B2Isotropic silicon nitride removalAPPLIED MATERIALS INC·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 1059US6599574B1Method and apparatus for forming a dielectric film using helium as a carrier gasAPPLIED MATERIALS INC·Filed 1996·Granted Jul 29, 2003·25 cites·25 claims
- 1157US2024420962A1Methods of selectively etching silicon nitrideAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1257US2025069894A1Methods of selectively etching silicon nitrideAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1357US2009120364A1Gas mixing swirl insert assemblyAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 1454US2009031953A1Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygenAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 1551US8012887B2Precursor addition to silicon oxide CVD for improved low temperature gapfillAPPLIED MATERIALS INC·Filed 2009·Granted Sep 6, 2011·0 cites·29 claims
- 1647US2022293430A1Isotropic silicon nitride removalAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1745US2009031955A1Vacuum chucking heater of axisymmetrical and uniform thermal profileAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 1844US2021111033A1Isotropic silicon nitride removalAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 1932US2006009479A1Process for the synthesis of hydromorphoneBAILEY TIMOTHY S·Filed 2005·Application pending·0 cites
- 2031US6153540AMethod of forming phosphosilicate glass having a high wet-etch rateAPPLIED MATERIALS INC·Filed 1998·Granted Nov 28, 2000·3 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →