Inventor · disambiguated record
Masaru Izumisawa
Also filed as: IZUMISAWA MASARU
36 granted patents·13 pending applications·686 citations·filing 2002–2023
98Inventor score
Top patents by PatentIndex Score
49 records- 0197US6844592B2Semiconductor device with super junction regionTOSHIBA KK·Filed 2003·Granted Jan 18, 2005·144 cites·18 claims
- 0296US8013360B2Semiconductor device having a junction of P type pillar region and N type pillar regionTOSHIBA KK·Filed 2010·Granted Sep 6, 2011·29 cites·8 claims
- 0395US7737469B2Semiconductor device having superjunction structure formed of p-type and n-type pillar regionsTOSHIBA KK·Filed 2007·Granted Jun 15, 2010·36 cites·9 claims
- 0494US6740931B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted May 25, 2004·95 cites·44 claims
- 0593US8716789B2Power semiconductor deviceONO SYOTARO·Filed 2012·Granted May 6, 2014·15 cites·20 claims
- 0692US6878989B2Power MOSFET semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Apr 12, 2005·59 cites·60 claims
- 0790US7919824B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Apr 5, 2011·17 cites·14 claims
- 0890US7226841B2Power MOSFET semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Jun 5, 2007·15 cites·14 claims
- 0989US7224022B2Vertical type semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted May 29, 2007·60 cites·15 claims
- 1089US7115475B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2004·Granted Oct 3, 2006·37 cites·1 claims
- 1188US9041101B2Power semiconductor deviceTOSHIBA KK·Filed 2014·Granted May 26, 2015·8 cites·20 claims
- 1287US7259426B2Semiconductor device and its manufacturing methodTOSHIBA KK·Filed 2005·Granted Aug 21, 2007·13 cites·16 claims
- 1384US7989910B2Semiconductor device including a resurf region with forward tapered teethTOSHIBA KK·Filed 2008·Granted Aug 2, 2011·11 cites·18 claims
- 1484US7605426B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Oct 20, 2009·11 cites·20 claims
- 1584US7301202B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Nov 27, 2007·11 cites·19 claims
- 1684US6849900B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Feb 1, 2005·37 cites·10 claims
- 1782US7622771B2Semiconductor apparatusTOSHIBA KK·Filed 2008·Granted Nov 24, 2009·10 cites·20 claims
- 1881US7759732B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Jul 20, 2010·8 cites·9 claims
- 1981US6972460B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Dec 6, 2005·23 cites·24 claims
- 2072US9142627B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Sep 22, 2015·3 cites·20 claims
- 2172US8907420B2Power semiconductor deviceSAITO WATARU·Filed 2010·Granted Dec 9, 2014·3 cites·10 claims
- 2268US8283720B2Power semiconductor deviceSAITO WATARU·Filed 2008·Granted Oct 9, 2012·5 cites·20 claims
- 2368US8227854B2Semiconductor device having first and second resurf layersONO SYOTARO·Filed 2007·Granted Jul 24, 2012·4 cites·20 claims
- 2468US7341900B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Mar 11, 2008·2 cites·7 claims
- 2568US7253507B2Semiconductor deviceTOSHIBA KK·Filed 2004·Granted Aug 7, 2007·15 cites·10 claims
- 2664US7462541B2Manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2005·Granted Dec 9, 2008·2 cites·11 claims
- 2763US7423315B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Sep 9, 2008·3 cites·20 claims
- 2859US12506106B2Semiconductor deviceTOSHIBA KK·Filed 2023·Granted Dec 23, 2025·0 cites·14 claims
- 2959US2024312875A1Semiconductor deviceTOSHIBA KK·Filed 2023·Application pending·0 cites
- 3058US7262477B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Aug 28, 2007·6 cites·26 claims
- 3157US8030706B2Power semiconductor deviceTOSHIBA KK·Filed 2009·Granted Oct 4, 2011·1 cites·19 claims
- 3255USRE47641ESemiconductor device with super junction regionTOSHIBA KK·Filed 2016·Granted Oct 8, 2019·0 cites·35 claims
- 3355US2024087969A1Semiconductor deviceTOSHIBA KK·Filed 2023·Application pending·0 cites
- 3453US7994006B2Manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2008·Granted Aug 9, 2011·0 cites·8 claims
- 3552US2014284756A1Semiconductor deviceTOSHIBA KK·Filed 2014·Application pending·0 cites
- 3650US8759938B2Semiconductor deviceONO SYOTARO·Filed 2012·Granted Jun 24, 2014·0 cites·20 claims
- 3750US8058693B2Semiconductor device having switching element and method for fabricating semiconductor device having switching elementENDO KOICHI·Filed 2009·Granted Nov 15, 2011·1 cites·6 claims
- 3850US7034346B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2003·Granted Apr 25, 2006·2 cites·15 claims
- 3948US2013334597A1Power semiconductor deviceYAMASHITA HIROAKI·Filed 2012·Application pending·0 cites
- 4048US2015380545A1Power semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 4147US2008315297A1Semiconductor deviceTOSHIBA KK·Filed 2008·Application pending·0 cites
- 4245US2007267664A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 4342US2015014826A1Semiconductor deviceTOSHIBA KK·Filed 2014·Application pending·0 cites
- 4441US2014077254A1Semiconductor device and method of manufacturing sameTOSHIBA KK·Filed 2013·Application pending·0 cites
- 4540US2006097313A1Semiconductor device and method of manufacturing sameTOSHIBA KK·Filed 2005·Application pending·0 cites
- 4638US9312331B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 12, 2016·0 cites·20 claims
- 4738US2004016962A1Semiconductor deviceFiled 2003·Application pending·0 cites
- 4829US2016079350A1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2015·Application pending·0 cites
- 4927US2016276468A1Semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →