Inventor · disambiguated record
Yongchul Oh
Also filed as: OH YONGCHUL
17 granted patents·4 pending applications·157 citations·filing 2005–2020
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD6XIA TAI XIN SEMICONDUCTOR QING DAO LTD6CHUNG HYUN-WOO2KIM KANG-UK2CHOI YONGGYU1
Top patents by PatentIndex Score
21 records- 0195US7394116B2Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 1, 2008·96 cites·21 claims
- 0288US8294131B2Integrated circuit devices including low-resistivity conductive patterns in recessed regionsKIM KANG-UK·Filed 2010·Granted Oct 23, 2012·14 cites·18 claims
- 0385US8859363B2Semiconductor devices including vertical channel transistors and methods of fabricating the sameKIM DAEIK·Filed 2011·Granted Oct 14, 2014·7 cites·18 claims
- 0485US8053316B2Method of fabricating vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 8, 2011·9 cites·20 claims
- 0583US8324673B2Semiconductor memory devices and methods of forming the sameCHUNG HYUN-WOO·Filed 2010·Granted Dec 4, 2012·8 cites·13 claims
- 0681US8283229B2Methods of fabricating vertical channel transistorsKIM KANG-UK·Filed 2010·Granted Oct 9, 2012·7 cites·10 claims
- 0778US9111960B2Semiconductor devices with vertical channel transistorsKIM HUI-JUNG·Filed 2011·Granted Aug 18, 2015·5 cites·20 claims
- 0873US9165935B2Semiconductor devices and methods for manufacturing the sameCHUNG HYUN-WOO·Filed 2012·Granted Oct 20, 2015·4 cites·7 claims
- 0968US9449677B2Methods of operating and forming semiconductor devices including dual-gate electrode structuresSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 20, 2016·2 cites·8 claims
- 1066US8384141B2Semiconductor device with vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Feb 26, 2013·2 cites·15 claims
- 1166US8372715B2Vertical channel transistors and methods for fabricating vertical channel transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Feb 12, 2013·2 cites·17 claims
- 1252US11245019B2Semiconductor device and method for fabricating the sameXIA TAI XIN SEMICONDUCTOR QING DAO LTD·Filed 2020·Granted Feb 8, 2022·0 cites·10 claims
- 1350US11133227B2Semiconductor device having active region and method for fabricating the sameXIA TAI XIN SEMICONDUCTOR QING DAO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·7 claims
- 1450US2015001617A1Semiconductor devices including vertical channel transistors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1549US9379001B2Semiconductor device and method of fabricating the sameCHOI YONGGYU·Filed 2014·Granted Jun 28, 2016·1 cites·23 claims
- 1646US11257710B2Method of fabricating semiconductor deviceXIA TAI XIN SEMICONDUCTOR QING DAO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·19 claims
- 1746US11158499B2Semiconductor component and method for fabricating the sameXIA TAI XIN SEMICONDUCTOR QING DAO LTD·Filed 2020·Granted Oct 26, 2021·0 cites·12 claims
- 1837US11349034B2Protruding gate transistor and method of producing sameXIA TAI XIN SEMICONDUCTOR QING DAO LTD·Filed 2019·Granted May 31, 2022·0 cites·17 claims
- 1936US2013087842A1Semiconductor devices including a vertical channel transistor and methods of fabricating the sameKIM JIYOUNG·Filed 2012·Application pending·0 cites
- 2033US2020220013A1Semiconductor structure and method of forming thereofXIA TAI XIN SEMICONDUCTOR QING DAO LTD·Filed 2019·Application pending·0 cites
- 2133US2012007208A1Semiconductor Devices and Methods of Manufacturing the SameKIM HYUN-GI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →