Inventor · disambiguated record
Michael L. Mcswiney
Also filed as: MCSWINEY MICHAEL · MCSWINEY MICHAEL L
24 granted patents·11 pending applications·394 citations·filing 2002–2022
95Inventor score
Top patents by PatentIndex Score
35 records- 0197US7316949B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2005·Granted Jan 8, 2008·50 cites·13 claims
- 0296US6858483B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2002·Granted Feb 22, 2005·81 cites·8 claims
- 0395US11848229B2Selective blocking of metal surfaces using bifunctional self-assembled monolayersAPPLIED MATERIALS INC·Filed 2022·Granted Dec 19, 2023·3 cites·18 claims
- 0494US6972225B2integrating n-type and P-type metal gate transistorsINTEL CORP·Filed 2004·Granted Dec 6, 2005·54 cites·19 claims
- 0594US6953719B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2004·Granted Oct 11, 2005·62 cites·9 claims
- 0693US7125582B2Low-temperature silicon nitride depositionINTEL CORP·Filed 2003·Granted Oct 24, 2006·57 cites·6 claims
- 0791US7241707B2Layered films formed by controlled phase segregationINTEL CORP·Filed 2005·Granted Jul 10, 2007·22 cites·44 claims
- 0884US7279423B2Forming a copper diffusion barrierINTEL CORP·Filed 2002·Granted Oct 9, 2007·26 cites·10 claims
- 0983US7459392B2Noble metal barrier and seed layer for semiconductorsINTEL CORP·Filed 2005·Granted Dec 2, 2008·12 cites·9 claims
- 1079US10658487B2Semiconductor devices having ruthenium phosphorus thin filmsINTEL CORP·Filed 2015·Granted May 19, 2020·1 cites·19 claims
- 1172US12094766B2Selective blocking of metal surfaces using bifunctional self-assembled monolayersAPPLIED MATERIALS INC·Filed 2022·Granted Sep 17, 2024·0 cites·14 claims
- 1270US8633463B2Depositing titanium silicon nitride films for forming phase change memoriesMICRON TECHNOLOGY INC·Filed 2013·Granted Jan 21, 2014·0 cites·20 claims
- 1370US7704858B2Methods of forming nickel silicide layers with low carbon contentINTEL CORP·Filed 2007·Granted Apr 27, 2010·4 cites·8 claims
- 1461US7071125B2Precursors for film formationINTEL CORP·Filed 2004·Granted Jul 4, 2006·8 cites·23 claims
- 1558US8501523B2Depositing titanium silicon nitride films for forming phase change memoriesLEE JONG-WON·Filed 2004·Granted Aug 6, 2013·2 cites·20 claims
- 1657US8227335B2Forming a copper diffusion barrierJOHNSTON STEVEN W·Filed 2007·Granted Jul 24, 2012·1 cites·5 claims
- 1757US7473614B2Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layerINTEL CORP·Filed 2004·Granted Jan 6, 2009·6 cites·7 claims
- 1852US7470450B2Forming a silicon nitride filmINTEL CORP·Filed 2004·Granted Dec 30, 2008·3 cites·3 claims
- 1952US2023317516A1Metal Surface Blocking Molecules for Selective DepositionAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2051US2009096025A1Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layerTOLCHINSKY PETER G·Filed 2008·Application pending·0 cites
- 2150US11769729B2Metal structures, devices, and methodsINTEL CORP·Filed 2018·Granted Sep 26, 2023·0 cites·20 claims
- 2250US2009087623A1Methods for the deposition of ternary oxide gate dielectrics and structures formed therebyBRAZIER MARK R·Filed 2007·Application pending·0 cites
- 2349US7138158B2Forming a dielectric layer using a hydrocarbon-containing precursorINTEL CORP·Filed 2003·Granted Nov 21, 2006·2 cites·26 claims
- 2446US2012091542A1Methods for the deposition of ternary oxide gate dielectrics and structures formed therebyBRAZIER MARK R·Filed 2011·Application pending·0 cites
- 2546US2007032675A1Forming a dielectric layer using a hydrocarbon-containing precursorMEAGLEY ROBERT P·Filed 2006·Application pending·0 cites
- 2645US7452728B2Metal ion separation from aqueous solutions using photoswitchable ionophoresINTEL CORP·Filed 2004·Granted Nov 18, 2008·0 cites·30 claims
- 2742US8003293B2Pixelated photoresistsINTEL CORP·Filed 2004·Granted Aug 23, 2011·0 cites·45 claims
- 2841US7615337B2Photoactive resist capping layerINTEL CORP·Filed 2004·Granted Nov 10, 2009·0 cites·12 claims
- 2939US2006068190A1Electronic devices with molecular sieve layersINTEL CORP·Filed 2004·Application pending·0 cites
- 3037US2005145177A1Method and apparatus for low temperature silicon nitride depositionFiled 2003·Application pending·0 cites
- 3136US2020066645A1Microelectronic devices and methods for enhancing interconnect reliability performance using tungsten containing adhesion layers to enable cobalt interconnectsINTEL CORP·Filed 2016·Application pending·0 cites
- 3236US2005014378A1Substrate patterning integrationFiled 2003·Application pending·0 cites
- 3335US2006228903A1Precursors for the deposition of carbon-doped silicon nitride or silicon oxynitride filmsMCSWINEY MICHAEL L·Filed 2005·Application pending·0 cites
- 3435US2006286800A1Method for adhesion and deposition of metal films which provide a barrier and permit direct platingDOMINGUEZ JUAN E·Filed 2005·Application pending·0 cites
- 3530US7235344B2Energy harvesting molecules and photoresist technologyINTEL CORP·Filed 2004·Granted Jun 26, 2007·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →