Inventor · disambiguated record
Hyeok Je Jeong
Also filed as: JEONG HYEOK-JE
1 granted patent·7 pending applications·26 citations·filing 2002–2024
42Inventor score
Top patents by PatentIndex Score
8 records- 0173US6909129B2Magnetic random access memoryHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 21, 2005·26 cites·3 claims
- 0249US2025133726A1Dram device comprising bit line with reduced capacitanceTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0349US2025365929A1Dram device with sub 4f2 structure comprising switching insulating layer and multilayer structure of word lineTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0449US2025133765A1Dram device comprising switching insulating layerTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0549US2025133727A1Dram device including low capacitance bit line and switching insulating layerTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0649US2025374515A1Three-dimensional stacked dram device with sub 4f2 structure cellsTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0746US2025374526A1High bandwidth memory with sub 4f2 cellsTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0844US2025133725A1Dram device having sub 4f2 structureTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →