Inventor · disambiguated record
Matthias Schaller
Also filed as: SCHALLER MATTHIAS
34 granted patents·7 pending applications·712 citations·filing 2003–2012
97Inventor score
Files withADVANCED MICRO DEVICES INC18SCHALLER MATTHIAS6GLOBALFOUNDRIES INC3FISCHER DANIEL2FROHBERG KAI2
Top patents by PatentIndex Score
41 records- 0197US7550396B2Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 23, 2009·507 cites·22 claims
- 0293US7396718B2Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stressADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 8, 2008·29 cites·9 claims
- 0393US7314793B2Technique for controlling mechanical stress in a channel region by spacer removalADVANCED MICRO DEVICES INC·Filed 2005·Granted Jan 1, 2008·39 cites·14 claims
- 0488US7517816B2Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stressADVANCED MICRO DEVICES INC·Filed 2005·Granted Apr 14, 2009·17 cites·6 claims
- 0588US7309654B2Technique for reducing etch damage during the formation of vias and trenches in interlayer dielectricsADVANCED MICRO DEVICES INC·Filed 2006·Granted Dec 18, 2007·14 cites·29 claims
- 0685US7986040B2Method of reducing erosion of a metal cap layer during via patterning in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2009·Granted Jul 26, 2011·11 cites·8 claims
- 0783US7678690B2Semiconductor device comprising a contact structure with increased etch selectivityADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 16, 2010·12 cites·12 claims
- 0879US8399358B2Establishing a hydrophobic surface of sensitive low-k dielectrics of microstructure devices by in situ plasma treatmentFISCHER DANIEL·Filed 2010·Granted Mar 19, 2013·5 cites·25 claims
- 0978US7416973B2Method of increasing the etch selectivity in a contact structure of semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 26, 2008·8 cites·10 claims
- 1076US7592258B2Metallization layer of a semiconductor device having differently thick metal lines and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Sep 22, 2009·7 cites·16 claims
- 1174US7611991B2Technique for increasing adhesion of metallization layers by providing dummy viasADVANCED MICRO DEVICES INC·Filed 2006·Granted Nov 3, 2009·8 cites·8 claims
- 1274US7482219B2Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Jan 27, 2009·6 cites·21 claims
- 1371US7122410B2Polysilicon line having a metal silicide region enabling linewidth scaling including forming a second metal silicide region on the substrateADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 17, 2006·15 cites·24 claims
- 1469US7763532B2Technique for forming a dielectric etch stop layer above a structure including closely spaced linesADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 27, 2010·4 cites·31 claims
- 1568US8435885B2Method and system for extracting samples after patterning of microstructure devicesCHUMAKOV DMYTRO·Filed 2011·Granted May 7, 2013·2 cites·21 claims
- 1667US7700377B2Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2007·Granted Apr 20, 2010·2 cites·23 claims
- 1767US7279415B2Method for forming a metallization layer stack to reduce the roughness of metal linesADVANCED MICRO DEVICES INC·Filed 2005·Granted Oct 9, 2007·2 cites·16 claims
- 1866US7098140B2Method of compensating for etch rate non-uniformities by ion implantationADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 29, 2006·10 cites·31 claims
- 1962US8575041B2Repair of damaged surface areas of sensitive low-K dielectrics of microstructure devices after plasma processing by in situ treatmentSCHALLER MATTHIAS·Filed 2011·Granted Nov 5, 2013·1 cites·25 claims
- 2062US8440579B2Re-establishing surface characteristics of sensitive low-k dielectrics in microstructure device by using an in situ surface modificationSCHALLER MATTHIAS·Filed 2011·Granted May 14, 2013·1 cites·17 claims
- 2161US7608501B2Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stressADVANCED MICRO DEVICES INC·Filed 2006·Granted Oct 27, 2009·2 cites·13 claims
- 2261US7005305B2Signal layer for generating characteristic optical plasma emissionsADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 28, 2006·7 cites·25 claims
- 2360US8835245B2Semiconductor device comprising self-aligned contact elementsBAARS PETER·Filed 2012·Granted Sep 16, 2014·1 cites·20 claims
- 2458US8658494B2Dual contact metallization including electroless plating in a semiconductor deviceFROHBERG KAI·Filed 2010·Granted Feb 25, 2014·1 cites·18 claims
- 2558US8062982B2High yield plasma etch process for interlayer dielectricsFISCHER DANIEL·Filed 2007·Granted Nov 22, 2011·1 cites·15 claims
- 2647US7704889B2Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurementsADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 27, 2010·0 cites·20 claims
- 2746US8423320B2Method and system for quantitative inline material characterization in semiconductor production processes based on structural measurements and related modelsSCHALLER MATTHIAS·Filed 2009·Granted Apr 16, 2013·0 cites·26 claims
- 2845US8338293B2Method of reducing erosion of a metal cap layer during via patterning in semiconductor devicesBARTSCH CHRISTIN·Filed 2011·Granted Dec 25, 2012·0 cites·16 claims
- 2945US8110498B2Method for passivating exposed copper surfaces in a metallization layer of a semiconductor deviceSCHALLER MATTHIAS·Filed 2009·Granted Feb 7, 2012·0 cites·15 claims
- 3043US8101524B2Technique for enhancing the fill capabilities in an electrochemical deposition process by edge rounding of trenchesFROHBERG KAI·Filed 2005·Granted Jan 24, 2012·0 cites·11 claims
- 3143US7763547B2Technique for enhancing process flexibility during the formation of vias and trenches in low-k interlayer dielectricsGLOBALFOUNDRIES INC·Filed 2005·Granted Jul 27, 2010·0 cites·17 claims
- 3242US7883629B2Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategiesGLOBALFOUNDRIES INC·Filed 2007·Granted Feb 8, 2011·0 cites·18 claims
- 3342US2007120264A1A semiconductor having a copper-based metallization stack with a last aluminum metal line layerLEHR MATTHIAS·Filed 2006·Application pending·0 cites
- 3440US8888947B2Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurementsSCHALLER MATTHIAS·Filed 2010·Granted Nov 18, 2014·0 cites·6 claims
- 3539US2004118516A1Plasma parameter control using learning dataFiled 2003·Application pending·0 cites
- 3637US2004241917A1Method of forming a substrate contact for an SOI semiconductor deviceFiled 2003·Application pending·0 cites
- 3736US2010243903A1Method and system for material characterization in semiconductor production processes based on ftir with variable angle of incidenceFAHR TORSTEN·Filed 2010·Application pending·0 cites
- 3834US2006141775A1Method of forming electrical connections in a semiconductor structureSCHUEHRER HOLGER·Filed 2005·Application pending·0 cites
- 3933US8925396B2Method and system for particles analysis in microstructure devices by isolating particlesHETZER PETRA·Filed 2010·Granted Jan 6, 2015·0 cites·22 claims
- 4032US2010301494A1Re-establishing a hydrophobic surface of sensitive low-k dielectrics in microstructure devicesSCHALLER MATTHIAS·Filed 2010·Application pending·0 cites
- 4128US2010248498A1Material stripping in semiconductor devices by evaporationHETZER PETRA·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →