Inventor · disambiguated record
Yoshinao Kumagai
Also filed as: KUMAGAI YOSHINAO
23 granted patents·5 pending applications·46 citations·filing 2003–2021
93Inventor score
Files withTAMURA SEISAKUSHO KK8KOUKITU AKINORI7SUMITOMO ELECTRIC INDUSTRIES3SORAA INC2UNIV TOKYO AGRICULTURE & TECHNOLOGY TLO CO LTD2
Top patents by PatentIndex Score
28 records- 0183US8822263B2Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor deviceKOUKITU AKINORI·Filed 2009·Granted Sep 2, 2014·9 cites·3 claims
- 0280US7621999B2Method and apparatus for AlGan vapor phase growthUNIV TOKYO AGRICULTURE & TECHNOLOGY TLO CO LTD·Filed 2005·Granted Nov 24, 2009·7 cites·6 claims
- 0379US9840790B2Highly transparent aluminum nitride single crystalline layers and devices made therefromKOUKITU AKINORI·Filed 2012·Granted Dec 12, 2017·1 cites·9 claims
- 0478US10538862B2Crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2016·Granted Jan 21, 2020·2 cites·14 claims
- 0577US11047067B2Crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2019·Granted Jun 29, 2021·1 cites·3 claims
- 0675US7518216B2Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitrideSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Apr 14, 2009·4 cites·1 claims
- 0774US10861945B2Semiconductor element and crystalline laminate structureTAMURA SEISAKUSHO KK·Filed 2015·Granted Dec 8, 2020·2 cites·7 claims
- 0874US10676841B2Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial waferTAMURA SEISAKUSHO KK·Filed 2015·Granted Jun 9, 2020·2 cites·4 claims
- 0974US8926752B2Method of producing a group III nitride crystalKOUKITU AKINORI·Filed 2008·Granted Jan 6, 2015·2 cites·1 claims
- 1072US8129208B2n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereofKOUKITU AKINORI·Filed 2008·Granted Mar 6, 2012·4 cites·5 claims
- 1169US9281180B2Method for producing gallium trichloride gas and method for producing nitride semiconductor crystalKOUKITU AKINORI·Filed 2011·Granted Mar 8, 2016·2 cites·12 claims
- 1269US7645340B2Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductorUNIV TOKYO AGRICULTURE & TECHNOLOGY TLO CO LTD·Filed 2003·Granted Jan 12, 2010·8 cites·19 claims
- 1367US10199512B2High voltage withstand Ga2O3-based single crystal schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2016·Granted Feb 5, 2019·1 cites·12 claims
- 1467US9978904B2Indium gallium nitride light emitting devicesSORAA INC·Filed 2013·Granted May 22, 2018·1 cites·18 claims
- 1565US11982016B2Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structureTAMURA SEISAKUSHO KK·Filed 2021·Granted May 14, 2024·0 cites·5 claims
- 1657US7843040B2Gallium nitride baseplate and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Nov 30, 2010·0 cites·4 claims
- 1756US10731274B2Group III nitride laminate and vertical semiconductor device having the laminateSTANLEY ELECTRIC CO LTD·Filed 2017·Granted Aug 4, 2020·0 cites·5 claims
- 1854US2016265137A1METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURETAMURA SEISAKUSHO KK·Filed 2014·Application pending·0 cites
- 1953US2018269351A1Indium gallium nitride light emitting devicesSORAA INC·Filed 2018·Application pending·0 cites
- 2051US7915149B2Gallium nitride substrate and gallium nitride layer formation methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Mar 29, 2011·0 cites·4 claims
- 2148US2024352619A1Crystal lamination structure, semiconductor device, and method of manufacturing crystal lamination structureMITSUBISHI ELECTRIC CORP·Filed 2021·Application pending·0 cites
- 2246US2011094438A1Laminated body and the method for production thereofKOUKITU AKINORI·Filed 2009·Application pending·0 cites
- 2345US10985016B2Semiconductor substrate, and epitaxial wafer and method for producing sameTAMURA SEISAKUSHO KK·Filed 2016·Granted Apr 20, 2021·0 cites·9 claims
- 2442US9691942B2Single-cystalline aluminum nitride substrate and a manufacturing method thereofKOUKITU AKINORI·Filed 2011·Granted Jun 27, 2017·0 cites·16 claims
- 2541US10125433B2Nitride semiconductor crystal, manufacturing method and manufacturing equipmentNATIONAL UNIV CORPORATION TOKYO·Filed 2016·Granted Nov 13, 2018·0 cites·10 claims
- 2641US9611545B2ZnO film production system and production method using ZnO film production system having heating units and control deviceTOKYO ELECTRON LTD·Filed 2013·Granted Apr 4, 2017·0 cites·5 claims
- 2739US9708733B2Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxyTOKUYAMA CORP·Filed 2014·Granted Jul 18, 2017·0 cites·6 claims
- 2837US2011018104A1METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATENAGASHIMA TORU·Filed 2008·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yoshinao Kumagai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →