Indium gallium nitride light emitting devices

Abstract

InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.

1 . A light emitting device comprising:
 a gallium- and indium-containing nitride substrate; an n-type layer overlying the substrate;   an active layer overlying then-type layer; and a p-type layer overlying the active layer;   wherein the gallium- and indium-containing nitride substrate comprises a thickness greater than 4 μm and an InN composition greater than 0.5%.   
     
     
         2 . The light emitting device of  claim 1 , wherein the substrate is characterized by a wurtzite crystal structure and a crystallographic orientation of a large area surface within about 5 degrees of one of the (0001) +c-plane and the (000-1) −c-plane. 
     
     
         3 . The light emitting device of  claim 1 , wherein the substrate is substantially crack-free. 
     
     
         4 . The light emitting device of  claim 1 , wherein the gallium- and indium-containing nitride substrate is relaxed, having a-axis and c-axis lattice constants within 0.1% of the equilibrium lattice constants for a specific indium-containing nitride composition. 
     
     
         5 . The light emitting device of  claim 1 , wherein the gallium- and indium-containing nitride substrate is relaxed, having a-axis and c-axis lattice constants within 0.01% of the equilibrium lattice constants for a specific indium-containing nitride composition. 
     
     
         6 . The light emitting device of  claim 1 , wherein the gallium- and indium-containing nitride substrate is relaxed, having a-axis and c-axis lattice constants within 0.001% of the equilibrium lattice constants for a specific indium-containing nitride composition. 
     
     
         7 . The light emitting device of  claim 1 , further comprising at least one of, a lamp, a luminaire, and a lighting system, wherein the light emitting device is incorporated into the lamp, the luminaire, or the lighting system. 
     
     
         8 . A light emitting device comprising: a substrate;
 an n-type layer overlying the substrate;   an active layer overlying the n-type layer; and a p-type layer overlying the active layer;   each of the n-type layer, the active layer, and the p-type layer is characterized by an in-plane lattice constant, wherein each of the in-plane lattice constants is greater, by at least 1%, than an in-plane lattice constant of similarly oriented GaN.   
     
     
         9 . The light emitting device of  claim 8 , wherein the substrate is characterized by a wurtzite crystal structure and a crystallographic orientation of a large area surface within about 5 degrees of one of the (0001) +c-plane and the (000-1) −c-plane. 
     
     
         10 . The light emitting device of  claim 8 , wherein the substrate is substantially crack-free. 
     
     
         11 . The light emitting device of  claim 8 , wherein the substrate comprises gallium- and indium-containing nitride and is relaxed, having a-axis and c-axis lattice constants within 0.1% of the respective equilibrium lattice constants for a specific indium-containing nitride composition. 
     
     
         12 . The light emitting device of  claim 8 , wherein the substrate comprises gallium- and indium-containing nitride and is relaxed, having a-axis and c-axis lattice constants within 0.01% of the respective equilibrium lattice constants for a specific indium-containing nitride composition. 
     
     
         13 . The light emitting device of  claim 8 , wherein the substrate comprises gallium- and indium-containing nitride and is relaxed, having a-axis and c-axis lattice constants within 0.001% of the respective equilibrium lattice constants for a specific indium-containing nitride composition. 
     
     
         14 . The light emitting device of  claim 8 , further comprising at least one of, a lamp, a luminaire, and a lighting system, wherein the light emitting device is incorporated into the lamp, the luminaire, or the lighting system. 
     
     
         15 . A method of fabricating a light emitting
 device comprising: providing a substrate;   selecting an InN composition;   fabricating an InGaN template by growing an InGaN epitaxial layer having the selected InN composition on the substrate by hydride vapor phase epitaxy; and   growing an optoelectronic device structure on the InGaN template.   
     
     
         16 . The method of  claim 15 , wherein the growing of the InGaN epitaxial layer is characterized by a crystallographic orientation within about 5 degrees of [000-1]. 
     
     
         17 . The method of  claim 15 , wherein the substrate is substantially indium-free. 
     
     
         18 . The method of  claim 15 , wherein the substrate comprises wurtzite GaN. 
     
     
         19 . The method of  claim 15 , further comprising patterning the substrate to facilitate atom transport along glide planes to form misfit dislocations. 
     
     
         20 . The method of  claim 15 , wherein growing the InGaN epitaxial layer having the selected InN composition on the substrate is performed by growing a series of graded layers having an intermediate InN composition. 
     
     
         21 - 25 . (canceled)