Inventor · disambiguated record
Akinori Koukitu
Also filed as: KOUKITU AKINORI
32 granted patents·6 pending applications·188 citations·filing 1995–2021
96Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES11KOUKITU AKINORI7TAMURA SEISAKUSHO KK7MITSUBISHI CHEM CORP2NATIONAL UNIV CORPORATION TOKYO UNIV OF AGRICULTURE AND TECHNOLOGY2
Top patents by PatentIndex Score
38 records- 0183US8822263B2Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor deviceKOUKITU AKINORI·Filed 2009·Granted Sep 2, 2014·9 cites·3 claims
- 0280US7621999B2Method and apparatus for AlGan vapor phase growthUNIV TOKYO AGRICULTURE & TECHNOLOGY TLO CO LTD·Filed 2005·Granted Nov 24, 2009·7 cites·6 claims
- 0379US9840790B2Highly transparent aluminum nitride single crystalline layers and devices made therefromKOUKITU AKINORI·Filed 2012·Granted Dec 12, 2017·1 cites·9 claims
- 0478US10538862B2Crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2016·Granted Jan 21, 2020·2 cites·14 claims
- 0577US11047067B2Crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2019·Granted Jun 29, 2021·1 cites·3 claims
- 0675US7518216B2Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitrideSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Apr 14, 2009·4 cites·1 claims
- 0774US10961619B2Method for producing GaN crystalMITSUBISHI CHEM CORP·Filed 2018·Granted Mar 30, 2021·1 cites·19 claims
- 0874US10861945B2Semiconductor element and crystalline laminate structureTAMURA SEISAKUSHO KK·Filed 2015·Granted Dec 8, 2020·2 cites·7 claims
- 0974US10676841B2Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial waferTAMURA SEISAKUSHO KK·Filed 2015·Granted Jun 9, 2020·2 cites·4 claims
- 1074US8926752B2Method of producing a group III nitride crystalKOUKITU AKINORI·Filed 2008·Granted Jan 6, 2015·2 cites·1 claims
- 1172US8129208B2n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereofKOUKITU AKINORI·Filed 2008·Granted Mar 6, 2012·4 cites·5 claims
- 1269US11371140B2Method for producing GaN crystalMITSUBISHI CHEM CORP·Filed 2021·Granted Jun 28, 2022·0 cites·15 claims
- 1369US9281180B2Method for producing gallium trichloride gas and method for producing nitride semiconductor crystalKOUKITU AKINORI·Filed 2011·Granted Mar 8, 2016·2 cites·12 claims
- 1469US7645340B2Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductorUNIV TOKYO AGRICULTURE & TECHNOLOGY TLO CO LTD·Filed 2003·Granted Jan 12, 2010·8 cites·19 claims
- 1567US10199512B2High voltage withstand Ga2O3-based single crystal schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2016·Granted Feb 5, 2019·1 cites·12 claims
- 1667US9978904B2Indium gallium nitride light emitting devicesSORAA INC·Filed 2013·Granted May 22, 2018·1 cites·18 claims
- 1765US11982016B2Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structureTAMURA SEISAKUSHO KK·Filed 2021·Granted May 14, 2024·0 cites·5 claims
- 1865US5665986ACompound semiconductor light emitting device and method of preparing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Sep 9, 1997·32 cites·20 claims
- 1964US5843590AEpitaxial wafer and method of preparing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Dec 1, 1998·32 cites·2 claims
- 2059US5970314AProcess for vapor phase epitaxy of compound semiconductorSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Oct 19, 1999·23 cites·6 claims
- 2157US7843040B2Gallium nitride baseplate and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Nov 30, 2010·0 cites·4 claims
- 2254US2016265137A1METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURETAMURA SEISAKUSHO KK·Filed 2014·Application pending·0 cites
- 2353US5864573AEpitaxial wafer and compound semiconductor light emitting device, and method of fabricating the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Jan 26, 1999·18 cites·20 claims
- 2453US2018269351A1Indium gallium nitride light emitting devicesSORAA INC·Filed 2018·Application pending·0 cites
- 2551US7915149B2Gallium nitride substrate and gallium nitride layer formation methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Mar 29, 2011·0 cites·4 claims
- 2651US6387722B1Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted May 14, 2002·3 cites·11 claims
- 2749US6270587B1Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Aug 7, 2001·12 cites·11 claims
- 2846US2011094438A1Laminated body and the method for production thereofKOUKITU AKINORI·Filed 2009·Application pending·0 cites
- 2944US6031252AEpitaxial wafer and method of preparing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Feb 29, 2000·11 cites·20 claims
- 3044US5756374ACompound semiconductor light emitting device and method of preparing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted May 26, 1998·10 cites·9 claims
- 3142US9691942B2Single-cystalline aluminum nitride substrate and a manufacturing method thereofKOUKITU AKINORI·Filed 2011·Granted Jun 27, 2017·0 cites·16 claims
- 3242US2020255974A1Method of Manufacturing Crystalline Gallium Nitride FilmNATIONAL UNIV CORPORATION TOKYO UNIV OF AGRICULTURE AND TECHNOLOGY·Filed 2018·Application pending·0 cites
- 3341US10125433B2Nitride semiconductor crystal, manufacturing method and manufacturing equipmentNATIONAL UNIV CORPORATION TOKYO·Filed 2016·Granted Nov 13, 2018·0 cites·10 claims
- 3441US9611545B2ZnO film production system and production method using ZnO film production system having heating units and control deviceTOKYO ELECTRON LTD·Filed 2013·Granted Apr 4, 2017·0 cites·5 claims
- 3540US11499247B2Vapor-liquid reaction device, reaction tube, film forming apparatusNATIONAL UNIV CORPORATION TOKYO UNIV OF AGRICULTURE AND TECHNOLOGY·Filed 2018·Granted Nov 15, 2022·0 cites·20 claims
- 3640US2007020872A1Process and apparatus for producing single crystalSHINDO ISAMU·Filed 2005·Application pending·0 cites
- 3738US10011921B2Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production deviceUNIV OSAKA·Filed 2015·Granted Jul 3, 2018·0 cites·43 claims
- 3837US2011018104A1METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATENAGASHIMA TORU·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →