Inventor · disambiguated record
Jack O. Chu
Also filed as: CHU JACK · CHU JACK O · CHU JACK OON
137 granted patents·16 pending applications·6,374 citations·filing 1991–2021
99Inventor score
Top patents by PatentIndex Score
153 records- 0199US7608496B2High speed GE channel heterostructures for field effect devicesIBM·Filed 2008·Granted Oct 27, 2009·123 cites·14 claims
- 0299US6943407B2Low leakage heterojunction vertical transistors and high performance devices thereofIBM·Filed 2003·Granted Sep 13, 2005·494 cites·28 claims
- 0399US6350993B1High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 1999·Granted Feb 26, 2002·404 cites·41 claims
- 0498US7906413B2Abrupt “delta-like” doping in Si and SiGe films by UHV-CVDIBM·Filed 2006·Granted Mar 15, 2011·137 cites·13 claims
- 0598US7678638B2Metal gated ultra short MOSFET devicesIBM·Filed 2008·Granted Mar 16, 2010·121 cites·10 claims
- 0698US7494861B2Method for metal gated ultra short MOSFET devicesIBM·Filed 2008·Granted Feb 24, 2009·121 cites·10 claims
- 0798US7348629B2Metal gated ultra short MOSFET devicesIBM·Filed 2006·Granted Mar 25, 2008·124 cites·7 claims
- 0898US6774010B2Transferable device-containing layer for silicon-on-insulator applicationsIBM·Filed 2001·Granted Aug 10, 2004·376 cites·30 claims
- 0998US6524935B1Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer techniqueIBM·Filed 2000·Granted Feb 25, 2003·250 cites·31 claims
- 1098US6059895AStrained Si/SiGe layers on insulatorIBM·Filed 1999·Granted May 9, 2000·397 cites·4 claims
- 1197US8178382B2Suspended germanium photodetector for silicon waveguideASSEFA SOLOMON·Filed 2011·Granted May 15, 2012·37 cites·7 claims
- 1297US7145167B1High speed Ge channel heterostructures for field effect devicesIBM·Filed 2000·Granted Dec 5, 2006·121 cites·11 claims
- 1397US6909186B2High performance FET devices and methods thereforIBM·Filed 2003·Granted Jun 21, 2005·88 cites·18 claims
- 1497US6593625B2Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealingIBM·Filed 2002·Granted Jul 15, 2003·182 cites·46 claims
- 1597US6251751B1Bulk and strained silicon on insulator using local selective oxidationIBM·Filed 1999·Granted Jun 26, 2001·239 cites·20 claims
- 1697US5963817ABulk and strained silicon on insulator using local selective oxidationIBM·Filed 1997·Granted Oct 5, 1999·251 cites·24 claims
- 1797US5906951AStrained Si/SiGe layers on insulatorIBM·Filed 1997·Granted May 25, 1999·304 cites·7 claims
- 1896US8916451B2Thin film wafer transfer and structure for electronic devicesIBM·Filed 2013·Granted Dec 23, 2014·29 cites·20 claims
- 1996US6649492B2Strained Si based layer made by UHV-CVD, and devices thereinIBM·Filed 2002·Granted Nov 18, 2003·152 cites·27 claims
- 2096US6096590AScalable MOS field effect transistorIBM·Filed 1998·Granted Aug 1, 2000·184 cites·37 claims
- 2196US6013134AAdvance integrated chemical vapor deposition (AICVD) for semiconductor devicesIBM·Filed 1998·Granted Jan 11, 2000·155 cites·7 claims
- 2295US9431301B1Nanowire field effect transistor (FET) and method for fabricating the sameIBM·Filed 2015·Granted Aug 30, 2016·11 cites·14 claims
- 2395US7902620B2Suspended germanium photodetector for silicon waveguideIBM·Filed 2008·Granted Mar 8, 2011·24 cites·13 claims
- 2495US7510904B2Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetectorIBM·Filed 2006·Granted Mar 31, 2009·22 cites·14 claims
- 2595US7244958B2Integration of strained Ge into advanced CMOS technologyIBM·Filed 2004·Granted Jul 17, 2007·82 cites·9 claims
- 2695US7205604B2Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereofIBM·Filed 2003·Granted Apr 17, 2007·98 cites·20 claims
- 2795US6709903B2Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealingIBM·Filed 2003·Granted Mar 23, 2004·86 cites·45 claims
- 2894US6855649B2Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealingIBM·Filed 2002·Granted Feb 15, 2005·90 cites·63 claims
- 2994US6475072B1Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP)IBM·Filed 2000·Granted Nov 5, 2002·86 cites·16 claims
- 3093US8828762B2Carbon nanostructure device fabrication utilizing protect layersIBM·Filed 2012·Granted Sep 9, 2014·10 cites·14 claims
- 3193US7999251B2Nanowire MOSFET with doped epitaxial contacts for source and drainIBM·Filed 2006·Granted Aug 16, 2011·22 cites·15 claims
- 3293US6963078B2Dual strain-state SiGe layers for microelectronicsIBM·Filed 2003·Granted Nov 8, 2005·68 cites·80 claims
- 3392US8927057B2Graphene formation utilizing solid phase carbon sourcesBOL AGEETH A·Filed 2010·Granted Jan 6, 2015·14 cites·13 claims
- 3492US8877340B2Graphene growth on a non-hexagonal latticeCHU JACK O·Filed 2010·Granted Nov 4, 2014·12 cites·14 claims
- 3592US7510916B2High performance FET devices and methods thereofIBM·Filed 2008·Granted Mar 31, 2009·14 cites·4 claims
- 3692US7091095B2Dual strain-state SiGe layers for microelectronicsIBM·Filed 2005·Granted Aug 15, 2006·22 cites·33 claims
- 3792US6875279B2Single reactor, multi-pressure chemical vapor deposition for semiconductor devicesIBM·Filed 2001·Granted Apr 5, 2005·44 cites·14 claims
- 3892US6425951B1Advance integrated chemical vapor deposition (AICVD) for semiconductorIBM·Filed 1999·Granted Jul 30, 2002·85 cites·13 claims
- 3991US8861728B2Integrated circuit tamper detection and responseIBM·Filed 2012·Granted Oct 14, 2014·12 cites·23 claims
- 4091US8541769B2Formation of a graphene layer on a large substrateCHU JACK O·Filed 2010·Granted Sep 24, 2013·10 cites·6 claims
- 4191US7138697B2Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetectorIBM·Filed 2004·Granted Nov 21, 2006·54 cites·39 claims
- 4291US6890835B1Layer transfer of low defect SiGe using an etch-back processIBM·Filed 2000·Granted May 10, 2005·53 cites·28 claims
- 4391US6805962B2Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applicationsIBM·Filed 2002·Granted Oct 19, 2004·52 cites·22 claims
- 4490US11101219B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2019·Granted Aug 24, 2021·3 cites·18 claims
- 4590US10269714B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2016·Granted Apr 23, 2019·4 cites·9 claims
- 4690US9984940B1Selective and conformal passivation layer for 3D high-mobility channel devicesIBM·Filed 2017·Granted May 29, 2018·6 cites·18 claims
- 4790US5656514AMethod for making heterojunction bipolar transistor with self-aligned retrograde emitter profileIBM·Filed 1994·Granted Aug 12, 1997·96 cites·8 claims
- 4889US10985105B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2018·Granted Apr 20, 2021·3 cites·18 claims
- 4989US8187955B2Graphene growth on a carbon-containing semiconductor layerCHU JACK O·Filed 2009·Granted May 29, 2012·10 cites·22 claims
- 5089US7705345B2High performance strained silicon FinFETs device and method for forming sameIBM·Filed 2004·Granted Apr 27, 2010·52 cites·18 claims
Showing the top 50 of 153 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →