Inventor · disambiguated record
Ji Pan
Also filed as: PAN JI · Pan ji-gang
43 granted patents·1 pending application·280 citations·filing 2006–2019
98Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR27PAN JI7BHALLA ANUP4UNITED MICROELECTRONICS CORP4ALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD1
Top patents by PatentIndex Score
44 records- 0197US9685435B2Integrated snubber in a single poly MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jun 20, 2017·12 cites·17 claims
- 0296US9356022B2Semiconductor device with termination structure for power MOSFET applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted May 31, 2016·11 cites·23 claims
- 0396US8785278B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactYILMAZ HAMZA·Filed 2012·Granted Jul 22, 2014·22 cites·21 claims
- 0495US9748375B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 29, 2017·9 cites·9 claims
- 0595US9230957B2Integrated snubber in a single poly MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Jan 5, 2016·16 cites·17 claims
- 0694US9105494B2Termination trench for power MOSFET applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Aug 11, 2015·14 cites·27 claims
- 0793US8809143B2Fabrication of MOS device with schottky barrier controlling layerALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Aug 19, 2014·9 cites·8 claims
- 0893US8748268B1Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etchingPAN JI·Filed 2012·Granted Jun 10, 2014·13 cites·8 claims
- 0992US9059147B1Junction barrier schottky (JBS) with floating islandsPAN JI·Filed 2014·Granted Jun 16, 2015·13 cites·9 claims
- 1092US8093651B2MOS device with integrated schottky diode in active region contact trenchBHALLA ANUP·Filed 2007·Granted Jan 10, 2012·16 cites·9 claims
- 1191US8643071B2Integrated snubber in a single poly MOSFETPAN JI·Filed 2012·Granted Feb 4, 2014·14 cites·21 claims
- 1290US9006053B2Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etchingALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Apr 14, 2015·8 cites·8 claims
- 1389US9281394B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·6 cites·19 claims
- 1489US9236450B2Fabrication of MOS device with schottky barrier controlling layerALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Jan 12, 2016·5 cites·9 claims
- 1589US9117695B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted Aug 25, 2015·11 cites·8 claims
- 1689US8969950B2Integrated MOSFET-Schottky diode device with reduced source and body Kelvin contact impedance and breakdown voltagePAN JI·Filed 2011·Granted Mar 3, 2015·9 cites·10 claims
- 1789US8692322B2Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC applicationPAN JI·Filed 2012·Granted Apr 8, 2014·9 cites·13 claims
- 1889US8450794B2MOS device with varying contact trench lengthsBHALLA ANUP·Filed 2011·Granted May 28, 2013·7 cites·9 claims
- 1989US8362547B2MOS device with Schottky barrier controlling layerALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Jan 29, 2013·9 cites·14 claims
- 2088US10103140B2Switch circuit with controllable phase node ringingALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Oct 16, 2018·4 cites·9 claims
- 2186US8728890B2Fabrication of MOS device with integrated Schottky diode in active region contact trenchALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted May 20, 2014·5 cites·12 claims
- 2286US8362552B2MOSFET device with reduced breakdown voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted Jan 29, 2013·7 cites·9 claims
- 2385US9312336B2MOSFET device with reduced breakdown voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Apr 12, 2016·4 cites·12 claims
- 2484US8928079B2MOS device with low injection diodeBHALLA ANUP·Filed 2012·Granted Jan 6, 2015·5 cites·22 claims
- 2582US9564516B2Method of making integrated MOSFET-schottky diode device with reduced source and body kelvin contact impedance and breakdown voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Feb 7, 2017·3 cites·7 claims
- 2682US8901003B1Polishing method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Dec 2, 2014·6 cites·16 claims
- 2782US8586435B2Fabrication of MOSFET device with reduced breakdown voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Nov 19, 2013·3 cites·11 claims
- 2881US10388781B2Device structure having inter-digitated back to back MOSFETsALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 20, 2019·3 cites·20 claims
- 2978US7671439B2Junction barrier Schottky (JBS) with floating islandsALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Mar 2, 2010·5 cites·16 claims
- 3076US10192982B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jan 29, 2019·1 cites·13 claims
- 3176US8680643B2Junction barrier Schottky (JBS) with floating islandsPAN JI·Filed 2012·Granted Mar 25, 2014·3 cites·10 claims
- 3276US8283723B2MOS device with low injection diodeBHALLA ANUP·Filed 2007·Granted Oct 9, 2012·4 cites·24 claims
- 3376US8227330B2Junction barrier Schottky (JBS) with floating islandsPAN JI·Filed 2010·Granted Jul 24, 2012·3 cites·6 claims
- 3476US8053808B2Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Nov 8, 2011·7 cites·17 claims
- 3575US10062685B2Variable snubber for MOSFET applicationALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Aug 28, 2018·1 cites·20 claims
- 3672US8362585B1Junction barrier Schottky diode with enforced upper contact structure and method for robust packagingALPHA & OMEGA SEMICONDUCTOR·Filed 2011·Granted Jan 29, 2013·3 cites·23 claims
- 3769US10978585B2MOS device with island regionALPHA & OMEGA SEMICONDUCTOR·Filed 2019·Granted Apr 13, 2021·0 cites·10 claims
- 3864US10535764B2Device and fabrication of MOS device with island regionALPHA & OMEGA SEMICONDUCTOR·Filed 2018·Granted Jan 14, 2020·0 cites·4 claims
- 3958US10763351B2Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Sep 1, 2020·0 cites·6 claims
- 4058US10074742B2MOS device with island regionALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 11, 2018·0 cites·6 claims
- 4156US10256236B2Forming switch circuit with controllable phase node ringingALPHA & OMEGA SEMICONDUCTOR·Filed 2018·Granted Apr 9, 2019·0 cites·11 claims
- 4244US10325908B2Compact source ballast trench MOSFET and method of manufacturingALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2017·Granted Jun 18, 2019·0 cites·8 claims
- 4340US9754788B2Manufacturing method of semiconductor structure including planarizing a polysilicon layer over an array area and a periphery areaUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 5, 2017·0 cites·14 claims
- 4437US2011195636A1Method for Controlling Polishing WaferUNITED MICROELECTRONICS CORP·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →