Method for Controlling Polishing Wafer

Abstract

A method for controlling polishing a wafer includes the following step. Firstly, a database storing a number of status data of a polished film of a wafer and a number of polishing parameters corresponding to the status data is established. Each of the polishing parameters includes a head sweep of a polishing head along a redial direction of a polishing platen. The head sweep refers to a movement distance range from a center of the polishing head to a center of the polishing platen during a polishing process. Subsequently, a first wafer having a predetermined status data is provided. Thereafter, the predetermined status data is compared with the status data in the database so as to find out the polishing parameter corresponding to the predetermined status data, thereby determining a first polishing parameter of the first wafer. Afterward, a first polishing process using the first polishing parameter is applied to the first wafer. The method can control the status of a polished film and optimize the polishing parameter.

1 . A method for controlling polishing a wafer, comprising:
 establishing a database storing a plurality of status data of a polished film of a wafer and a plurality of polishing parameters corresponding to the status data, each of the polishing parameters at least comprising a head sweep of a polishing head along a redial direction of a polishing platen, the head sweep referring to a movement distance range from a center of the polishing head to a center of the polishing platen during a polishing process;   providing a first wafer having a predetermined status data;   comparing the predetermined status data with the status data stored in the database so as to find out a polishing parameter corresponding to the predetermined status data, thereby determining a first polishing parameter of the first wafer; and   performing a first polishing process using the first polishing parameter to polish the first wafer.   
     
     
         2 . The method as claimed in  claim 1 , wherein the first polishing parameter comprises a first head sweep, and the polishing head moves back and forth in the first head sweep along the redial direction of the polishing platen during the first polishing process. 
     
     
         3 . The method as claimed in  claim 1 , wherein the polished film is a copper film. 
     
     
         4 . The method as claimed in  claim 1 , wherein each of the status data is a thickness distribution of the polished film. 
     
     
         5 . The method as claimed in  claim 1 , wherein each of the status data is a removal rate distribution of the polished film. 
     
     
         6 . The method as claimed in  claim 1 , further comprising:
 providing a second wafer having the predetermined status data;   measuring the first wafer polished by the first polishing process to obtain a measuring status data of the first wafer;   comparing the measuring status data with the predetermined status data so as to obtain an amended status data to update the data base, thereby finding out a polishing parameter corresponding to the amended status data in the updated data base to determine a second polishing parameter of the second wafer; and   performing a second polishing process using the second polishing parameter to polish the second wafer.   
     
     
         7 . The method as claimed in  claim 6 , wherein in the step of comparing the measuring status data with the predetermined status data, a plurality of regions are defined on the first wafer so as to obtain a correcting value of each of the regions, the correcting value of each of the regions is equal to a ratio of a status value of the measuring status data in each of the regions to a status value of the predetermined status data in the corresponding region, and the amended status data are equal to the status value of the predetermined status data in each of the regions respectively multiplied by the corresponding correcting value. 
     
     
         8 . The method as claimed in  claim 6 , the second polishing parameter comprises a second head sweep, and the polishing head moves back and forth in the second head sweep along the redial direction of the polishing platen during the second polishing process. 
     
     
         9 . The method as claimed in  claim 6 , wherein each of the status data is a thickness distribution of the polished film. 
     
     
         10 . The method as claimed in  claim 6 , wherein each of the status data is a removal rate distribution of the polished film. 
     
     
         11 . A method for controlling polishing a wafer, comprising:
 providing a plurality of wafers, the wafers having an identical polished film;   polishing the polished films of the wafers sequentially using a plurality of polishing parameters, each of the polishing parameters comprising a head sweep of a polishing head along a redial direction of a polishing platen, the head sweep referring to a movement distance range from a center of the polishing head to a center of the polishing platen during a polishing process;   measuring the polished wafers so as to obtain a plurality of status data of the polished films;   establishing a data base comprising a relationship of the status data and the polishing parameters corresponding to the status data;   storing the database in an advanced process control system; and   controlling a polishing process of a wafer using the advanced process control system.   
     
     
         12 . The method as claimed in  claim 11 , wherein each of the status data is a thickness distribution of the polished film. 
     
     
         13 . The method as claimed in  claim 11 , wherein each of the status data is a removal rate distribution of the polished film. 
     
     
         14 . The method as claimed in  claim 11 , wherein the step of controlling the polishing process of the wafer using the advanced process control system comprises:
 providing a first wafer having a predetermined status data;   finding out a polishing parameter corresponding to the predetermined status data in the database using the advanced process control system according to predetermined status data, thereby determining a first polishing parameter of the first wafer; and   controlling a polishing device using the advanced process control system to perform a first polishing process using the first polishing parameter to polish the first wafer.   
     
     
         15 . The method as claimed in  claim 14 , wherein the step of controlling the polishing process of the wafer using the advanced process control system further comprises:
 providing a second wafer having the predetermined status data;   controlling a measuring device using the advanced process control system to measure the first wafer polished by the first polishing process, thereby obtaining a measuring status data of the first wafer to feed back to the advanced process control system;   comparing the measuring status data with the predetermined status data using the advanced process control system so as to obtain an amended status data to update the data base, thereby finding out a polishing parameter corresponding to the amended status data in the updated data base to determine a second polishing parameter of the second wafer; and   controlling the polishing device using the advanced process control system to perform a second polishing process using the second polishing parameter to polish the second wafer.   
     
     
         16 . The method as claimed in  claim 9 , wherein in the step of comparing the measuring status data with the predetermined status data, a plurality of regions are defined on the first wafer so as to obtain a correcting value of each of the regions, the correcting value of each of the regions is equal to a ratio of a status value of the measuring status data in each of the regions to a status value of the predetermined status data in the corresponding region, and the amended status data are equal to the status value of the predetermined status data in each of the regions respectively multiplied by the corresponding correcting value.