Inventor · disambiguated record
Tak H. Ning
Also filed as: NING TAK · NING TAK H · NING TAK HUNG
270 granted patents·20 pending applications·3,174 citations·filing 1977–2021
99Inventor score
Top patents by PatentIndex Score
290 records- 0199US9893207B1Programmable read only memory (ROM) integrated in tight pitch vertical transistor structuresIBM·Filed 2017·Granted Feb 13, 2018·33 cites·20 claims
- 0299US9536788B1Complementary SOI lateral bipolar transistors with backplate biasIBM·Filed 2015·Granted Jan 3, 2017·44 cites·10 claims
- 0399US9368572B1Vertical transistor with air-gap spacerIBM·Filed 2015·Granted Jun 14, 2016·177 cites·7 claims
- 0499US8906755B1Active matrix using hybrid integrated circuit and bipolar transistorIBM·Filed 2013·Granted Dec 9, 2014·93 cites·8 claims
- 0598US10825921B2Lateral bipolar junction transistor with controlled junctionIBM·Filed 2018·Granted Nov 3, 2020·22 cites·6 claims
- 0698US10468503B1Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devicesIBM·Filed 2018·Granted Nov 5, 2019·14 cites·7 claims
- 0798US9799777B1Floating gate memory in a channel last vertical FET flowIBM·Filed 2016·Granted Oct 24, 2017·23 cites·20 claims
- 0898US9780100B1Vertical floating gate memory with variable channel doping profileIBM·Filed 2016·Granted Oct 3, 2017·26 cites·6 claims
- 0998US9691850B2Vertical transistor with air-gap spacerIBM·Filed 2016·Granted Jun 27, 2017·23 cites·14 claims
- 1098US9673307B1Lateral bipolar junction transistor with abrupt junction and compound buried oxideIBM·Filed 2016·Granted Jun 6, 2017·25 cites·20 claims
- 1198US9653465B1Vertical transistors having different gate lengthsIBM·Filed 2016·Granted May 16, 2017·35 cites·16 claims
- 1298US9450381B1Monolithic integrated photonics with lateral bipolar and BiCMOSIBM·Filed 2015·Granted Sep 20, 2016·29 cites·9 claims
- 1398US8288758B2SOI SiGe-base lateral bipolar junction transistorNING TAK H·Filed 2010·Granted Oct 16, 2012·59 cites·13 claims
- 1497US9536789B1Fin-double-gated junction field effect transistorIBM·Filed 2016·Granted Jan 3, 2017·16 cites·10 claims
- 1597US9318585B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Apr 19, 2016·30 cites·6 claims
- 1697US8980667B2Charge sensors using inverted lateral bipolar junction transistorsCAI JIN·Filed 2012·Granted Mar 17, 2015·18 cites·14 claims
- 1797US8586441B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Nov 19, 2013·32 cites·20 claims
- 1897US8435845B2Junction field effect transistor with an epitaxially grown gate structureNING TAK H·Filed 2011·Granted May 7, 2013·29 cites·22 claims
- 1997US8420493B2SOI SiGe-base lateral bipolar junction transistorNING TAK H·Filed 2012·Granted Apr 16, 2013·40 cites·20 claims
- 2097US5886376AEEPROM having coplanar on-insulator FET and control gateIBM·Filed 1996·Granted Mar 23, 1999·251 cites·23 claims
- 2196US10283516B1Stacked nanosheet field effect transistor floating-gate EEPROM cell and arrayIBM·Filed 2018·Granted May 7, 2019·16 cites·20 claims
- 2296US9799756B1Germanium lateral bipolar transistor with silicon passivationIBM·Filed 2016·Granted Oct 24, 2017·11 cites·10 claims
- 2396US9748239B2Fin-double-gated junction field effect transistorIBM·Filed 2016·Granted Aug 29, 2017·11 cites·20 claims
- 2496US9726631B1Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown baseIBM·Filed 2016·Granted Aug 8, 2017·12 cites·20 claims
- 2596US9437718B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Sep 6, 2016·16 cites·14 claims
- 2696US9059016B1Lateral heterojunction bipolar transistorsIBM·Filed 2014·Granted Jun 16, 2015·27 cites·19 claims
- 2796US8558282B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Oct 15, 2013·26 cites·20 claims
- 2896US8441084B2Horizontal polysilicon-germanium heterojunction bipolar transistorCAI JIN·Filed 2011·Granted May 14, 2013·30 cites·20 claims
- 2996US7816728B2Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applicationsIBM·Filed 2005·Granted Oct 19, 2010·45 cites·20 claims
- 3096US7195971B2Method of manufacturing an intralevel decoupling capacitorIBM·Filed 2005·Granted Mar 27, 2007·26 cites·18 claims
- 3196US5960265AMethod of making EEPROM having coplanar on-insulator FET and control gateIBM·Filed 1997·Granted Sep 28, 1999·163 cites·7 claims
- 3296US4157269AUtilizing polysilicon diffusion sources and special masking techniquesIBM·Filed 1978·Granted Jun 5, 1979·130 cites·10 claims
- 3395US10411109B2Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing areaIBM·Filed 2018·Granted Sep 10, 2019·6 cites·20 claims
- 3495US9698245B2Vertical transistor with air-gap spacerIBM·Filed 2016·Granted Jul 4, 2017·9 cites·19 claims
- 3595US9625409B1Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown baseIBM·Filed 2016·Granted Apr 18, 2017·11 cites·20 claims
- 3695US8803233B2Junctionless transistorCHENG KANGGUO·Filed 2011·Granted Aug 12, 2014·17 cites·20 claims
- 3795US8705280B2Electrically programmable floating common gate CMOS device and applications thereofCAI JIN·Filed 2010·Granted Apr 22, 2014·23 cites·20 claims
- 3895US8557670B1SOI lateral bipolar junction transistor having a wide band gap emitter contactCAI JIN·Filed 2012·Granted Oct 15, 2013·22 cites·20 claims
- 3995US7700993B2CMOS EPROM and EEPROM devices and programmable CMOS invertersIBM·Filed 2007·Granted Apr 20, 2010·42 cites·25 claims
- 4094US9859172B1Bipolar transistor compatible with vertical FET fabricationIBM·Filed 2016·Granted Jan 2, 2018·9 cites·10 claims
- 4194US9852938B1Passivated germanium-on-insulator lateral bipolar transistorsIBM·Filed 2016·Granted Dec 26, 2017·9 cites·19 claims
- 4294US9502504B2SOI lateral bipolar transistors having surrounding extrinsic base portionsIBM·Filed 2013·Granted Nov 22, 2016·20 cites·20 claims
- 4394US8486797B1Bipolar junction transistor with epitaxial contactsHEKMATSHOARTABARI BAHMAN·Filed 2012·Granted Jul 16, 2013·14 cites·25 claims
- 4494US6882015B2Intralevel decoupling capacitor, method of manufacture and testing circuit of the sameIBM·Filed 2003·Granted Apr 19, 2005·49 cites·16 claims
- 4593US10483368B1Single crystalline extrinsic bases for bipolar junction structuresIBM·Filed 2018·Granted Nov 19, 2019·6 cites·18 claims
- 4693US10256302B2Vertical transistor with air-gap spacerIBM·Filed 2017·Granted Apr 9, 2019·6 cites·16 claims
- 4793US9761608B1Lateral bipolar junction transistor with multiple base lengthsIBM·Filed 2016·Granted Sep 12, 2017·8 cites·19 claims
- 4893US9263583B2Integrated finFET-BJT replacement metal gateGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 16, 2016·16 cites·14 claims
- 4993US4688063ADynamic ram cell with MOS trench capacitor in CMOSIBM·Filed 1986·Granted Aug 18, 1987·82 cites·46 claims
- 5092US9059212B2Back-end transistors with highly doped low-temperature contactsIBM·Filed 2012·Granted Jun 16, 2015·9 cites·9 claims
Showing the top 50 of 290 patent records by PatentIndex Score.
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