Inventor · disambiguated record
Olivier Faynot
Also filed as: FAYNOT OLIVIER · FAYNOT OLIVIER A · FAYNOT OLIVIER ALAIN
7 granted patents·1 pending application·17 citations·filing 2003–2013
79Inventor score
Top patents by PatentIndex Score
8 records- 0168US7732282B2Transistor of the I-MOS type comprising two independent gates and method of using such a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jun 8, 2010·4 cites·7 claims
- 0260US7763915B2Three-dimensional integrated C-MOS circuit and method for producing sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jul 27, 2010·2 cites·18 claims
- 0358US7939398B2Method to manufacture silicon quantum islands and single-electron devicesTEXAS INSTRUMENTS INC·Filed 2009·Granted May 10, 2011·1 cites·7 claims
- 0455US7198993B2Method of fabricating a combined fully-depleted silicon-on-insulator (FD-SOI) and partially-depleted silicon-on-insulator (PD-SOI) devicesTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 3, 2007·7 cites·14 claims
- 0549US7122413B2Method to manufacture silicon quantum islands and single-electron devicesTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 17, 2006·3 cites·14 claims
- 0647US8877618B2Method for producing a field effect transistor with a SiGe channel by ion implantationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Nov 4, 2014·0 cites·7 claims
- 0747US7579226B2Thin layer element and associated fabrication processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Aug 25, 2009·0 cites·20 claims
- 0846US2007007596A1Method to manufacture silicon quantum islands and single-electron devicesTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →