Inventor · disambiguated record
Masayuki Terai
Also filed as: TERAI MASAYUKI
36 granted patents·13 pending applications·217 citations·filing 1987–2025
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD25TERAI MASAYUKI9RENESAS ELECTRONICS CORP4NEC CORP3NEC ELECTRONICS CORP2
Top patents by PatentIndex Score
49 records- 0198US9741764B1Memory device including ovonic threshold switch adjusting threshold voltage thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 22, 2017·37 cites·20 claims
- 0292US9991315B2Memory device including ovonic threshold switch adjusting threshold voltage thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 5, 2018·7 cites·5 claims
- 0389US9184218B2Semiconductor memory device having three-dimensional cross point arraySAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·10 cites·20 claims
- 0489US8766233B2Semiconductor device with variable resistance element and method for manufacturing the sameSAKOTSUBO YUKIHIRO·Filed 2010·Granted Jul 1, 2014·16 cites·8 claims
- 0587US8767439B2Resistance change nonvolatile memory device, semiconductor device, and method of operating resistance change nonvolatile memory deviceTERAI MASAYUKI·Filed 2012·Granted Jul 1, 2014·11 cites·12 claims
- 0686US8934283B2Semiconductor memory device, semiconductor device and method of manufacturing semiconductor memory deviceMATSUDAIRA MASAHARU·Filed 2012·Granted Jan 13, 2015·16 cites·7 claims
- 0784US7791129B2Semiconductor device and method of producing the same including a charge accumulation layer with differing charge trap surface densityNEC CORP·Filed 2007·Granted Sep 7, 2010·11 cites·26 claims
- 0883US10522595B2Memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 31, 2019·4 cites·18 claims
- 0980US10305032B2Memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 28, 2019·2 cites·19 claims
- 1077US8106444B2Semiconductor deviceTERAI MASAYUKI·Filed 2007·Granted Jan 31, 2012·7 cites·24 claims
- 1176US4835705AInterconnection area decision processorMITSUBISHI ELECTRIC CORP·Filed 1987·Granted May 30, 1989·68 cites·7 claims
- 1275US10608176B2Memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 31, 2020·1 cites·20 claims
- 1374US9263673B2Resistive memory device having asymmetric diode structureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 16, 2016·2 cites·20 claims
- 1473US9812501B2Variable resistance memory devices and methods of manufacturing the sameLEE JIN-WOO·Filed 2015·Granted Nov 7, 2017·2 cites·20 claims
- 1572US9118009B2Method of fabricating a variable reistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 25, 2015·3 cites·20 claims
- 1671US10297642B2Semiconductor device having data storage patternSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 21, 2019·1 cites·20 claims
- 1770US9514807B2Variable resistance memory deviceKANG YOUNSEON·Filed 2015·Granted Dec 6, 2016·5 cites·20 claims
- 1868US7759744B2Semiconductor device having high dielectric constant layers of different thicknessesNEC ELECTRONICS CORP·Filed 2005·Granted Jul 20, 2010·4 cites·1 claims
- 1967US9373665B2Resistance change nonvolatile memory device, semiconductor device, and method of manufacturing resistance change nonvolatile memory deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Jun 21, 2016·2 cites·20 claims
- 2066US2025212389A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2166US2025294720A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2265US9172039B2Methods of fabricating memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 27, 2015·1 cites·15 claims
- 2365US2025176163A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2465US2025016981A1Integrated circuit memory devices having highly integrated memory cells therein with enhanced landing pad structuresSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2562US9362340B2Memory devices having low permittivity layers and methods of fabricating the sameTERAI MASAYUKI·Filed 2015·Granted Jun 7, 2016·1 cites·20 claims
- 2662US9123889B2Resistance change nonvolatile memory device, semiconductor device, and method of manufacturing resistance change nonvolatile memory deviceTERAI MASAYUKI·Filed 2012·Granted Sep 1, 2015·2 cites·20 claims
- 2761US2025344378A1Semiconductor memory device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2861US2025063727A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2960US8300448B2Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage deviceTERAI MASAYUKI·Filed 2009·Granted Oct 30, 2012·1 cites·18 claims
- 3060US2025380402A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3159US8787067B2Semiconductor device and method of controlling semiconductor deviceSAITOH MOTOFUMI·Filed 2012·Granted Jul 22, 2014·2 cites·31 claims
- 3258US8278701B2Nonvolatile memory deviceTERAI MASAYUKI·Filed 2007·Granted Oct 2, 2012·1 cites·34 claims
- 3356US2019252464A1Semiconductor device having data storage patternSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 3450US8692309B2Semiconductor deviceTERAI MASAYUKI·Filed 2012·Granted Apr 8, 2014·0 cites·3 claims
- 3545US11545214B2Resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 3645US10910279B2Variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·0 cites·20 claims
- 3745US2011096595A1Semiconductor memory device and operation method thereofTERAI MASAYUKI·Filed 2009·Application pending·0 cites
- 3844US11094882B2Method of manufacturing memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·18 claims
- 3941US10546999B2Variable resistance memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 28, 2020·0 cites·16 claims
- 4041US2009201739A1Method for driving semiconductor device, and semiconductor deviceNEC CORP·Filed 2007·Application pending·0 cites
- 4140US9208868B2Semiconductor device including a variable resistance device, and method of controlling the semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 8, 2015·0 cites·15 claims
- 4240US8148757B2Semiconductor device, and its manufacturing methodTERAI MASAYUKI·Filed 2007·Granted Apr 3, 2012·0 cites·15 claims
- 4340US7821823B2Semiconductor memory device, method of driving the same and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Granted Oct 26, 2010·0 cites·60 claims
- 4440US2009115002A1Semiconductor DeviceNEC CORP·Filed 2006·Application pending·0 cites
- 4540US2018166502A1Semiconductor device including a line pattern having threshold switching devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 4638US9305641B2Resistance change memory and forming method of the resistance change deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 5, 2016·0 cites·9 claims
- 4736US10811462B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 20, 2020·0 cites·16 claims
- 4835US10825862B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 3, 2020·0 cites·19 claims
- 4935US2016099051A1Resistance change memory and forming method of the resistance change deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →