Assignee
TERAI MASAYUKI
JP·8 granted patents·1 pending application·23 citations·filing 2007–2015
Top patents by PatentIndex Score
9 records- 0187US8767439B2Resistance change nonvolatile memory device, semiconductor device, and method of operating resistance change nonvolatile memory deviceTERAI MASAYUKI·Filed 2012·Granted Jul 1, 2014·11 cites·12 claims
- 0277US8106444B2Semiconductor deviceTERAI MASAYUKI·Filed 2007·Granted Jan 31, 2012·7 cites·24 claims
- 0362US9362340B2Memory devices having low permittivity layers and methods of fabricating the sameTERAI MASAYUKI·Filed 2015·Granted Jun 7, 2016·1 cites·20 claims
- 0462US9123889B2Resistance change nonvolatile memory device, semiconductor device, and method of manufacturing resistance change nonvolatile memory deviceTERAI MASAYUKI·Filed 2012·Granted Sep 1, 2015·2 cites·20 claims
- 0560US8300448B2Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage deviceTERAI MASAYUKI·Filed 2009·Granted Oct 30, 2012·1 cites·18 claims
- 0658US8278701B2Nonvolatile memory deviceTERAI MASAYUKI·Filed 2007·Granted Oct 2, 2012·1 cites·34 claims
- 0750US8692309B2Semiconductor deviceTERAI MASAYUKI·Filed 2012·Granted Apr 8, 2014·0 cites·3 claims
- 0845US2011096595A1Semiconductor memory device and operation method thereofTERAI MASAYUKI·Filed 2009·Application pending·0 cites
- 0940US8148757B2Semiconductor device, and its manufacturing methodTERAI MASAYUKI·Filed 2007·Granted Apr 3, 2012·0 cites·15 claims
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