Inventor · disambiguated record
Hari V. Mallela
Also filed as: MALLELA HARI · MALLELA HARI V
28 granted patents·1 pending application·223 citations·filing 2009–2020
96Inventor score
Top patents by PatentIndex Score
29 records- 0199US9530700B1Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess etchIBM·Filed 2016·Granted Dec 27, 2016·65 cites·15 claims
- 0299US9437503B1Vertical FETs with variable bottom spacer recessIBM·Filed 2015·Granted Sep 6, 2016·73 cites·20 claims
- 0397US9728466B1Vertical field effect transistors with metallic source/drain regionsIBM·Filed 2016·Granted Aug 8, 2017·24 cites·14 claims
- 0496US9761727B2Vertical FETs with variable bottom spacer recessIBM·Filed 2016·Granted Sep 12, 2017·12 cites·6 claims
- 0596US9601491B1Vertical field effect transistors having epitaxial fin channel with spacers below gate structureIBM·Filed 2016·Granted Mar 21, 2017·10 cites·20 claims
- 0695US9911804B1Vertical fin field effect transistor with air gap spacersIBM·Filed 2016·Granted Mar 6, 2018·8 cites·6 claims
- 0793US10109535B2Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess ETCHIBM·Filed 2016·Granted Oct 23, 2018·6 cites·13 claims
- 0891US10283416B2Vertical FETS with variable bottom spacer recessIBM·Filed 2018·Granted May 7, 2019·4 cites·20 claims
- 0988US10164119B2Vertical field effect transistors with protective fin liner during bottom spacer recess etchIBM·Filed 2017·Granted Dec 25, 2018·3 cites·19 claims
- 1085US11056391B2Subtractive vFET process flow with replacement metal gate and metallic source/drainIBM·Filed 2016·Granted Jul 6, 2021·4 cites·3 claims
- 1182US9859384B2Vertical field effect transistors with metallic source/drain regionsIBM·Filed 2017·Granted Jan 2, 2018·3 cites·14 claims
- 1278US10170543B2Vertical fin field effect transistor with air gap spacersIBM·Filed 2017·Granted Jan 1, 2019·1 cites·20 claims
- 1377US10424515B2Vertical FET devices with multiple channel lengthsIBM·Filed 2016·Granted Sep 24, 2019·2 cites·21 claims
- 1477US10243041B2Vertical fin field effect transistor with air gap spacersIBM·Filed 2017·Granted Mar 26, 2019·1 cites·16 claims
- 1576US9390928B2Anisotropic dielectric material gate spacer for a field effect transistorGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 12, 2016·3 cites·10 claims
- 1674US9929058B2Vertical FETS with variable bottom spacer recessIBM·Filed 2016·Granted Mar 27, 2018·1 cites·9 claims
- 1772US11024709B2Vertical fin field effect transistor with air gap spacersIBM·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
- 1870US10811413B2Multi-threshold vertical FETs with common gatesIBM·Filed 2018·Granted Oct 20, 2020·1 cites·13 claims
- 1968US10833048B2Nanowire enabled substrate bonding and electrical contact formationIBM·Filed 2018·Granted Nov 10, 2020·1 cites·20 claims
- 2067US11481611B2RRAM crossbar array structure for multi-task learningIBM·Filed 2018·Granted Oct 25, 2022·1 cites·4 claims
- 2164US10644104B2Vertical fin field effect transistor with air gap spacersIBM·Filed 2018·Granted May 5, 2020·0 cites·15 claims
- 2261US10957603B2Vertical FET devices with multiple channel lengthsIBM·Filed 2019·Granted Mar 23, 2021·0 cites·20 claims
- 2357US10381463B2Patterned sidewall smoothing using a pre-smoothed inverted tone patternIBM·Filed 2018·Granted Aug 13, 2019·0 cites·17 claims
- 2456US10068991B1Patterned sidewall smoothing using a pre-smoothed inverted tone patternIBM·Filed 2017·Granted Sep 4, 2018·0 cites·15 claims
- 2553US9337041B2Anisotropic dielectric material gate spacer for a field effect transistorGLOBAL FOUNDRIES INC·Filed 2014·Granted May 10, 2016·0 cites·17 claims
- 2647US2010204940A1Method and system of commonality analysis for lots with scrapped waferIBM·Filed 2009·Application pending·0 cites
- 2745US9337334B2Semiconductor memory device employing a ferromagnetic gateGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·0 cites·19 claims
- 2844US10770512B1Stacked resistive random access memory with integrated access transistor and high density layoutIBM·Filed 2019·Granted Sep 8, 2020·0 cites·10 claims
- 2938US9514992B2Unidirectional spacer in trench silicideIBM·Filed 2015·Granted Dec 6, 2016·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →