Inventor · disambiguated record
Anthony J. Lochtefeld
Also filed as: LOCHTEFELD ANTHONY · LOCHTEFELD ANTHONY J
114 granted patents·20 pending applications·3,310 citations·filing 2002–2021
99Inventor score
Files withAMBERWAVE SYSTEMS CORP46TAIWAN SEMICONDUCTOR MFG30TAIWAN SEMICONDUCTOR MFG CO LTD23LOCHTEFELD ANTHONY J8LOCHTEFELD ANTHONY7
Top patents by PatentIndex Score
134 records- 0199US7799592B2Tri-gate field-effect transistors formed by aspect ratio trappingTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 21, 2010·183 cites·23 claims
- 0299US7420201B2Strained-semiconductor-on-insulator device structures with elevated source/drain regionsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 2, 2008·80 cites·25 claims
- 0399US7109516B2Strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 19, 2006·100 cites·15 claims
- 0499US7074623B2Methods of forming strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jul 11, 2006·226 cites·6 claims
- 0599US6995430B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Feb 7, 2006·485 cites·14 claims
- 0699US6960781B2Shallow trench isolation processAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Nov 1, 2005·223 cites·40 claims
- 0799US6831292B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Dec 14, 2004·361 cites·62 claims
- 0898US8629477B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 14, 2014·35 cites·20 claims
- 0998US8324660B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationLOCHTEFELD ANTHONY J·Filed 2010·Granted Dec 4, 2012·85 cites·24 claims
- 1098US7977706B2Tri-gate field-effect transistors formed by aspect ratio trappingTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jul 12, 2011·33 cites·20 claims
- 1198US7777250B2Lattice-mismatched semiconductor structures and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 17, 2010·122 cites·20 claims
- 1298US7638842B2Lattice-mismatched semiconductor structures on insulatorsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Dec 29, 2009·81 cites·41 claims
- 1398US7626246B2Solutions for integrated circuit integration of alternative active area materialsAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Dec 1, 2009·121 cites·14 claims
- 1498US7122449B2Methods of fabricating semiconductor structures having epitaxially grown source and drain elementsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Oct 17, 2006·66 cites·63 claims
- 1597US8384196B2Formation of devices by epitaxial layer overgrowthTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·39 cites·16 claims
- 1697US8237151B2Diode-based devices and methods for making the sameLOCHTEFELD ANTHONY J·Filed 2010·Granted Aug 7, 2012·24 cites·19 claims
- 1797US8173551B2Defect reduction using aspect ratio trappingBAI JIE·Filed 2007·Granted May 8, 2012·106 cites·22 claims
- 1897US8034697B2Formation of devices by epitaxial layer overgrowthTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 11, 2011·76 cites·28 claims
- 1997US7504704B2Shallow trench isolation processAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Mar 17, 2009·54 cites·22 claims
- 2096US8796734B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·16 cites·20 claims
- 2196US8765510B2Semiconductor diodes fabricated by aspect ratio trapping with coalesced filmsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 1, 2014·19 cites·20 claims
- 2296US8519436B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 27, 2013·17 cites·20 claims
- 2396US8344242B2Multi-junction solar cellsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jan 1, 2013·29 cites·11 claims
- 2496US8253211B2Semiconductor sensor structures with reduced dislocation defect densitiesCHENG ZHIYUAN·Filed 2009·Granted Aug 28, 2012·36 cites·15 claims
- 2595US8628989B2Tri-gate field-effect transistors formed by aspect ration trappingTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 14, 2014·16 cites·20 claims
- 2695US8502263B2Light-emitter-based devices with lattice-mismatched semiconductor structuresLI JIZHONG·Filed 2007·Granted Aug 6, 2013·35 cites·22 claims
- 2795US7838392B2Methods for forming III-V semiconductor device structuresTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 23, 2010·17 cites·14 claims
- 2895US7588994B2Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strainAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 15, 2009·17 cites·24 claims
- 2995US7259388B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Aug 21, 2007·18 cites·18 claims
- 3095US6946371B2Methods of fabricating semiconductor structures having epitaxially grown source and drain elementsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Sep 20, 2005·70 cites·35 claims
- 3194US8878243B2Lattice-mismatched semiconductor structures and related methods for device fabricationLOCHTEFELD ANTHONY J·Filed 2010·Granted Nov 4, 2014·14 cites·20 claims
- 3294US8026534B2III-V semiconductor device structuresTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Sep 27, 2011·10 cites·20 claims
- 3394US7297612B2Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Nov 20, 2007·16 cites·16 claims
- 3493US9859381B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 2, 2018·8 cites·20 claims
- 3593US9431243B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·5 cites·21 claims
- 3693US9064930B2Methods for forming semiconductor device structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 23, 2015·7 cites·20 claims
- 3793US7566606B2Methods of fabricating semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Jul 28, 2009·19 cites·16 claims
- 3893US7138310B2Semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Nov 21, 2006·60 cites·13 claims
- 3992US8309986B2Tri-gate field-effect transistors formed by aspect ratio trappingLOCHTEFELD ANTHONY J·Filed 2011·Granted Nov 13, 2012·11 cites·14 claims
- 4092US8304805B2Semiconductor diodes fabricated by aspect ratio trapping with coalesced filmsLOCHTEFELD ANTHONY J·Filed 2010·Granted Nov 6, 2012·10 cites·20 claims
- 4192US6991972B2Gate material for semiconductor device fabricationAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jan 31, 2006·49 cites·50 claims
- 4291US9818819B2Defect reduction using aspect ratio trappingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·5 cites·20 claims
- 4391US9153645B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationLI JIZHONG·Filed 2008·Granted Oct 6, 2015·18 cites·15 claims
- 4491US8586452B2Methods for forming semiconductor device structuresLOCHTEFELD ANTHONY J·Filed 2011·Granted Nov 19, 2013·6 cites·19 claims
- 4590US10680126B2Photovoltaics on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 9, 2020·4 cites·20 claims
- 4690US10074536B2Lattice-mismatched semiconductor structures and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 11, 2018·7 cites·19 claims
- 4790US8847279B2Defect reduction using aspect ratio trappingBAI JIE·Filed 2012·Granted Sep 30, 2014·8 cites·20 claims
- 4890US7897493B2Inducement of strain in a semiconductor layerTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 1, 2011·12 cites·18 claims
- 4989US9508890B2Photovoltaics on siliconLI JIZHONG·Filed 2008·Granted Nov 29, 2016·14 cites·25 claims
- 5089US9029908B2Semiconductor diodes fabricated by aspect ratio trapping with coalesced filmsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 12, 2015·5 cites·20 claims
Showing the top 50 of 134 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →