Inventor · disambiguated record
John J. Pekarik
Also filed as: PEKARIK JOHN · PEKARIK JOHN J · PEKARIK JOHN JOSEPH
99 granted patents·16 pending applications·442 citations·filing 1998–2025
99Inventor score
Files withGLOBALFOUNDRIES US INC41IBM30GLOBALFOUNDRIES INC22GLOBALFOUNDRIES SG PTE LTD9CLARK JR WILLIAM F2
Top patents by PatentIndex Score
115 records- 0198US10509244B1Optical switches and routers operated by phase-changing materials controlled by heatersGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·23 cites·20 claims
- 0297US11271077B2Trap-rich layer in a high-resistivity semiconductor layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 8, 2022·4 cites·20 claims
- 0396US11145725B2Heterojunction bipolar transistorGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 12, 2021·4 cites·20 claims
- 0495US11637068B2Thermally and electrically conductive interconnectsGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 25, 2023·3 cites·14 claims
- 0595US10388728B1Structures with an airgap and methods of forming such structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·13 cites·12 claims
- 0693US11063139B2Heterojunction bipolar transistors with airgap isolationGLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 13, 2021·3 cites·20 claims
- 0793US7538391B2Curved FINFETsIBM·Filed 2007·Granted May 26, 2009·28 cites·10 claims
- 0893US7517806B2Integrated circuit having pairs of parallel complementary FinFETsIBM·Filed 2005·Granted Apr 14, 2009·21 cites·22 claims
- 0992US12327776B1Heat sink for face bonded semiconductor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Jun 10, 2025·2 cites·17 claims
- 1091US11791334B2Heterojunction bipolar transistor with buried trap rich isolation regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 17, 2023·2 cites·12 claims
- 1190US6498096B2Borderless contact to diffusion with respect to gate conductor and methods for fabricatingIBM·Filed 2001·Granted Dec 24, 2002·62 cites·11 claims
- 1289US11004878B2Photodiodes integrated into a BiCMOS processGLOBALFOUNDRIES US INC·Filed 2019·Granted May 11, 2021·5 cites·19 claims
- 1389US10038063B2Tunable breakdown voltage RF FET devicesIBM·Filed 2014·Granted Jul 31, 2018·6 cites·15 claims
- 1489US9240448B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2015·Granted Jan 19, 2016·5 cites·9 claims
- 1588US9029229B2Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regionsIBM·Filed 2013·Granted May 12, 2015·10 cites·13 claims
- 1688US7414275B2Multi-level interconnections for an integrated circuit chipIBM·Filed 2005·Granted Aug 19, 2008·17 cites·8 claims
- 1787US10916642B2Heterojunction bipolar transistor with emitter base junction oxide interfaceGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 9, 2021·3 cites·18 claims
- 1887US10642125B1Optical beam steering with directionality provided by switched grating couplersGLOBALFOUNDRIES INC·Filed 2019·Granted May 5, 2020·2 cites·20 claims
- 1987US10367083B2Compact device structures for a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 30, 2019·5 cites·12 claims
- 2086US9093491B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2012·Granted Jul 28, 2015·7 cites·13 claims
- 2186US7670889B2Structure and method for fabrication JFET in CMOSIBM·Filed 2008·Granted Mar 2, 2010·12 cites·19 claims
- 2286US6943405B2Integrated circuit having pairs of parallel complementary FinFETsIBM·Filed 2003·Granted Sep 13, 2005·28 cites·18 claims
- 2385US10777668B2Bipolar junction transistors with a self-aligned emitter and baseGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 15, 2020·4 cites·18 claims
- 2485US6038168AHot-electron programmable latch for integrated circuit fuse applications and method of programming thereforIBM·Filed 1998·Granted Mar 14, 2000·62 cites·15 claims
- 2584US9202900B2Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technologyIBM·Filed 2014·Granted Dec 1, 2015·5 cites·7 claims
- 2682US8633082B2Method for fabricating high-gain MOSFETs with asymmetric source/drain doping for analog and RF applicationsLASSERRE SEBASTIEN·Filed 2011·Granted Jan 21, 2014·8 cites·12 claims
- 2782US8610174B2Bipolar transistor with a raised collector pedestal for reduced capacitanceADKISSON JAMES W·Filed 2011·Granted Dec 17, 2013·6 cites·22 claims
- 2882US8455924B2Multi-level interconnections for an integrated circuit chipGREENBERG DAVID ROSS·Filed 2008·Granted Jun 4, 2013·11 cites·11 claims
- 2981US12142673B2Transistor with wrap-around extrinsic baseGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 3081US11271079B2Wafer with crystalline silicon and trap rich polysilicon layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 8, 2022·1 cites·17 claims
- 3181US11217685B2Heterojunction bipolar transistor with marker layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 4, 2022·1 cites·20 claims
- 3281US10115810B2Heterojunction bipolar transistor with a thickened extrinsic baseGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 30, 2018·3 cites·11 claims
- 3381US7462916B2Semiconductor devices having torsional stressesIBM·Filed 2006·Granted Dec 9, 2008·10 cites·4 claims
- 3480US12324227B2Heterojunction bipolar transistor with buried trap rich isolation regionGLOBALFOUNDRIES US INC·Filed 2023·Granted Jun 3, 2025·0 cites·19 claims
- 3580US9111986B2Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic baseIBM·Filed 2014·Granted Aug 18, 2015·4 cites·10 claims
- 3680US8927379B2Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technologyIBM·Filed 2012·Granted Jan 6, 2015·4 cites·7 claims
- 3779US11127831B2Transistor structure with overlying gate on polysilicon gate structure and related methodGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 21, 2021·1 cites·18 claims
- 3879US9312370B2Bipolar transistor with extrinsic base region and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·4 cites·9 claims
- 3979US2025006824A1Transistor with wrap-around extrinsic baseGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Application pending·0 cites
- 4078US10469041B2Gallium nitride (GaN) power amplifiers (PA) with angled electrodes and 100 CMOS and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 5, 2019·2 cites·10 claims
- 4178US9496377B2Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic baseGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 15, 2016·2 cites·8 claims
- 4278US2025254981A1Heterojunction bipolar transistor with buried trap rich isolation regionGLOBALFOUNDRIES US INC·Filed 2025·Application pending·0 cites
- 4377US7382029B2Method and apparatus for improving integrated circuit device performance using hybrid crystal orientationsIBM·Filed 2005·Granted Jun 3, 2008·6 cites·4 claims
- 4474US8916440B2Semiconductor structures and methods of manufactureCLARK JR WILLIAM F·Filed 2012·Granted Dec 23, 2014·3 cites·15 claims
- 4574US8829572B2Structure and layout of a FET prime cellJAGANNATHAN BASANTH·Filed 2012·Granted Sep 9, 2014·3 cites·20 claims
- 4674US2024395869A1Bipolar transistorsGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Application pending·0 cites
- 4773US12211929B1Heterojunction bipolar transistors with terminals having a non-planar arrangementGLOBALFOUNDRIES US INC·Filed 2024·Granted Jan 28, 2025·0 cites·20 claims
- 4873US11855196B2Transistor with wrap-around extrinsic baseGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 4973US2025359098A1Heterojunction bipolar transistors with terminals having a non-planar arrangementGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 5071US7355221B2Field effect transistor having an asymmetrically stressed channel regionIBM·Filed 2005·Granted Apr 8, 2008·3 cites·10 claims
Showing the top 50 of 115 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →