Inventor · disambiguated record
Sarunya Bangsaruntip
Also filed as: BANGSARUNTIP SARUNYA
74 granted patents·6 pending applications·861 citations·filing 2007–2022
99Inventor score
Top patents by PatentIndex Score
80 records- 0199US7795677B2Nanowire field-effect transistorsIBM·Filed 2007·Granted Sep 14, 2010·146 cites·22 claims
- 0297US8936972B2Epitaxially thickened doped or undoped core nanowire FET structure and method for increasing effective device widthBANGSARUNTIP SARUNYA·Filed 2012·Granted Jan 20, 2015·29 cites·22 claims
- 0397US8809131B2Replacement gate fin first wire last gate all around devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 19, 2014·35 cites·26 claims
- 0497US8580624B2Nanowire FET and finFET hybrid technologyBANGSARUNTIP SARUNYA·Filed 2011·Granted Nov 12, 2013·36 cites·21 claims
- 0597US7884004B2Maskless process for suspending and thinning nanowiresIBM·Filed 2009·Granted Feb 8, 2011·51 cites·19 claims
- 0696US8441043B2Maskless process for suspending and thinning nanowiresBANGSARUNTIP SARUNYA·Filed 2011·Granted May 14, 2013·23 cites·8 claims
- 0796US8324940B2Nanowire circuits in matched devicesBANGSARUNTIP SARUNYA·Filed 2010·Granted Dec 4, 2012·18 cites·11 claims
- 0896US7534675B2Techniques for fabricating nanowire field-effect transistorsINTERNAT BUSINESS MACHIENS COR·Filed 2007·Granted May 19, 2009·53 cites·13 claims
- 0995US9029834B2Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectricBANGSARUNTIP SARUNYA·Filed 2010·Granted May 12, 2015·22 cites·20 claims
- 1095US8541774B2Hybrid CMOS technology with nanowire devices and double gated planar devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Sep 24, 2013·18 cites·12 claims
- 1195US8384065B2Gate-all-around nanowire field effect transistorsIBM·Filed 2009·Granted Feb 26, 2013·34 cites·35 claims
- 1295US8173993B2Gate-all-around nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted May 8, 2012·35 cites·27 claims
- 1395US8097515B2Self-aligned contacts for nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted Jan 17, 2012·36 cites·16 claims
- 1494US8809957B2Nanowire FET and FinFET hybrid technologyIBM·Filed 2013·Granted Aug 19, 2014·14 cites·6 claims
- 1594US8420455B2Generation of multiple diameter nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Apr 16, 2013·17 cites·22 claims
- 1694US8324030B2Nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Dec 4, 2012·17 cites·14 claims
- 1793US11857997B2Metal surface protectionIBM·Filed 2020·Granted Jan 2, 2024·2 cites·8 claims
- 1892US9064942B2Nanowire capacitor for bidirectional operationIBM·Filed 2013·Granted Jun 23, 2015·13 cites·25 claims
- 1992US8455334B2Planar and nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted Jun 4, 2013·19 cites·20 claims
- 2091US8829625B2Nanowire FET with trapezoid gate structureSLEIGHT JEFFREY W·Filed 2012·Granted Sep 9, 2014·11 cites·19 claims
- 2190US8586966B2Contacts for nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Nov 19, 2013·19 cites·10 claims
- 2290US8575009B2Two-step hydrogen annealing process for creating uniform non-planar semiconductor devices at aggressive pitchSLEIGHT JEFFREY W·Filed 2012·Granted Nov 5, 2013·9 cites·16 claims
- 2390US8298881B2Nanowire FET with trapezoid gate structureSLEIGHT JEFFREY W·Filed 2010·Granted Oct 30, 2012·11 cites·8 claims
- 2490US8008146B2Different thickness oxide silicon nanowire field effect transistorsIBM·Filed 2009·Granted Aug 30, 2011·17 cites·6 claims
- 2588US8143113B2Omega shaped nanowire tunnel field effect transistors fabricationBANGSARUNTIP SARUNYA·Filed 2009·Granted Mar 27, 2012·10 cites·20 claims
- 2688US8129247B2Omega shaped nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted Mar 6, 2012·12 cites·28 claims
- 2788US7816275B1Gate patterning of nano-channel devicesIBM·Filed 2009·Granted Oct 19, 2010·13 cites·18 claims
- 2886US9748334B1Fabrication of nanomaterial T-gate transistors with charge transfer doping layerIBM·Filed 2016·Granted Aug 29, 2017·4 cites·10 claims
- 2986US8716072B2Hybrid CMOS technology with nanowire devices and double gated planar devicesBANGSARUNTIP SARUNYA·Filed 2011·Granted May 6, 2014·7 cites·10 claims
- 3085US8921825B2Nanowire field effect transistor deviceBANGSARUNTIP SARUNYA·Filed 2012·Granted Dec 30, 2014·6 cites·3 claims
- 3185US8564025B2Nanowire FET having induced radial strainBANGSARUNTIP SARUNYA·Filed 2012·Granted Oct 22, 2013·6 cites·20 claims
- 3285US8241971B2MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gateBANGSARUNTIP SARUNYA·Filed 2009·Granted Aug 14, 2012·8 cites·8 claims
- 3384US10546924B2Fabrication of nanomaterial T-gate transistors with charge transfer doping layerIBM·Filed 2017·Granted Jan 28, 2020·3 cites·20 claims
- 3484US8685823B2Nanowire field effect transistor deviceBANGSARUNTIP SARUNYA·Filed 2011·Granted Apr 1, 2014·6 cites·6 claims
- 3584US8648330B2Nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Feb 11, 2014·4 cites·6 claims
- 3684US8558219B2Nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Oct 15, 2013·4 cites·19 claims
- 3784US8519479B2Generation of multiple diameter nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Aug 27, 2013·5 cites·4 claims
- 3883US8722492B2Nanowire pin tunnel field effect devicesBANGSARUNTIP SARUNYA·Filed 2010·Granted May 13, 2014·6 cites·18 claims
- 3982US9035383B2Nanowire capacitor for bidirectional operationIBM·Filed 2013·Granted May 19, 2015·5 cites·7 claims
- 4082US8614434B2MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gateBANGSARUNTIP SARUNYA·Filed 2012·Granted Dec 24, 2013·4 cites·14 claims
- 4182US8536563B2Nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Sep 17, 2013·5 cites·3 claims
- 4282US8513068B2Nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 20, 2013·5 cites·13 claims
- 4382US8445337B2Generation of multiple diameter nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted May 21, 2013·5 cites·18 claims
- 4481US8263477B2Structure for use in fabrication of PiN heterojunction TFETBANGSARUNTIP SARUNYA·Filed 2010·Granted Sep 11, 2012·5 cites·15 claims
- 4579US8313990B2Nanowire FET having induced radial strainBANGSARUNTIP SARUNYA·Filed 2009·Granted Nov 20, 2012·6 cites·10 claims
- 4679US8309991B2Nanowire FET having induced radial strainBANGSARUNTIP SARUNYA·Filed 2009·Granted Nov 13, 2012·7 cites·22 claims
- 4777US9337264B2Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectricGLOBALFOUNDRIES INC·Filed 2015·Granted May 10, 2016·2 cites·19 claims
- 4876US9184301B2Planar and nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2012·Granted Nov 10, 2015·3 cites·5 claims
- 4976US8445948B2Gate patterning of nano-channel devicesFULLER NICHOLAS C M·Filed 2010·Granted May 21, 2013·4 cites·14 claims
- 5075US8520430B2Nanowire circuits in matched devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 27, 2013·3 cites·20 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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