Inventor · disambiguated record
Chris Hill
Also filed as: HILL CHRIS · HILL CHRIS W
27 granted patents·7 pending applications·218 citations·filing 1998–2022
96Inventor score
Top patents by PatentIndex Score
34 records- 0195US6930058B2Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and GeMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 16, 2005·88 cites·54 claims
- 0284US8153502B2Methods for filling trenches in a semiconductor materialLI LI·Filed 2006·Granted Apr 10, 2012·12 cites·30 claims
- 0381US7157385B2Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 2, 2007·16 cites·21 claims
- 0476US7667258B2Double-sided container capacitors using a sacrificial layerMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 23, 2010·5 cites·17 claims
- 0568US7470632B2Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and GeMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 30, 2008·2 cites·45 claims
- 0666US7429541B2Method of forming trench isolation in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 30, 2008·1 cites·25 claims
- 0765US7329576B2Double-sided container capacitors using a sacrificial layerMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 12, 2008·9 cites·38 claims
- 0865US6306766B1Method of forming a crystalline phase material, electrically conductive line and refractory metal silicideMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 23, 2001·8 cites·23 claims
- 0964US8110891B2Method of increasing deposition rate of silicon dioxide on a catalystHILL CHRIS W·Filed 2005·Granted Feb 7, 2012·1 cites·38 claims
- 1063US6090708AMethod of forming a crystalline phase material, electrically conductive line and refractory metal silicideMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 18, 2000·23 cites·77 claims
- 1162US6596641B2Chemical vapor deposition methodsMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 22, 2003·13 cites·34 claims
- 1259US6982228B2Methods of etching a contact opening over a node location on a semiconductor substrateMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 3, 2006·2 cites·32 claims
- 1357US2024409419A1Application of performic acid (pfa) for mineral processingKEMIRA OYJ·Filed 2022·Application pending·0 cites
- 1456US6433378B1Integrated circuits having material within structural gapsMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 13, 2002·3 cites·16 claims
- 1554US7361614B2Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 22, 2008·0 cites·22 claims
- 1654US7250380B2Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 31, 2007·0 cites·24 claims
- 1754US7250378B2Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 31, 2007·0 cites·20 claims
- 1853US8470686B2Method of increasing deposition rate of silicon dioxide on a catalystHILL CHRIS W·Filed 2012·Granted Jun 25, 2013·0 cites·22 claims
- 1953US8158488B2Method of increasing deposition rate of silicon dioxide on a catalystHILL CHRIS W·Filed 2004·Granted Apr 17, 2012·3 cites·52 claims
- 2052US6787877B2Method for filling structural gaps and integrated circuitryMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 7, 2004·2 cites·40 claims
- 2151US2006024973A1Methods of etching a contact opening over a node location on a semiconductor substrateJOST MARK E·Filed 2005·Application pending·0 cites
- 2251US2005266676A1Multi-layer dielectric and method of forming sameMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 2350US6828252B2Method of etching a contact openingMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 7, 2004·2 cites·12 claims
- 2448US6175155B1Selectively formed contact structureMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 16, 2001·11 cites·40 claims
- 2548US2006246719A1Inter-metal dielectric fillMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 2647US2006265868A1Inter-metal dielectric fillRUEGER NEAL R·Filed 2006·Application pending·0 cites
- 2745US6940171B2Multi-layer dielectric and method of forming sameMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 6, 2005·4 cites·25 claims
- 2842US6905956B2Multi-layer dielectric and method of forming sameMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 14, 2005·3 cites·32 claims
- 2941US6500730B1Method for filling structural gaps and integrated circuitryMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 31, 2002·0 cites·20 claims
- 3040US2006038293A1Inter-metal dielectric fillRUEGER NEAL R·Filed 2004·Application pending·0 cites
- 3138US6100186AMethod of selectively forming a contact in a contact holeMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 8, 2000·5 cites·25 claims
- 3238US2017088309A1Pallet and method of making a palletACHIMAN PTY LTD·Filed 2015·Application pending·0 cites
- 3336US6171948B1Method for filling structural gaps and intergrated circuitryMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 9, 2001·3 cites·45 claims
- 3433US6384466B1Multi-layer dielectric and method of forming sameMICRON TECHNOLOGY INC·Filed 1998·Granted May 7, 2002·2 cites·26 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →