Multi-layer dielectric and method of forming same

Abstract

A multiple dielectric device and its method of manufacture overlaying a semiconductor material, comprising a substrate, an opening relative to the substrate, the opening having an aspect ratio greater than about two, a first dielectric layer in the opening, wherein a portion of the opening not filled with the first dielectric layer has an aspect ratio of not greater than about two, and a second dielectric layer over said first dielectric layer. The deposition rates of the first and second dielectric layers may be achieved through changes in process settings, such as temperature, reactor chamber pressure, dopant concentration, flow rate, and a spacing between the shower head and the assembly. The dielectric layer of present invention provides a first layer dielectric having a low deposition rate as a first step, and an efficiently formed second dielectric layer as a second completing step.

1 - 57 . (canceled)  
   
   
       58 . A method of forming a dielectric layer over a surface having at least one opening therein, comprising: 
 forming a first dielectric layer at a first deposition rate over the surface and in the opening such that the first dielectric layer is substantially free of voids, the opening having an aspect ratio greater than about two; and    forming a second dielectric layer at a second deposition rate greater than the first deposition rate over the first dielectric layer, the second layer having a top surface over the opening.    
   
   
       59 . The method of  claim 58 , further comprising 
 providing a substrate; and    forming the opening in the substrate.    
   
   
       60 . The method of  claim 59 , wherein providing the substrate includes providing a substrate selected from the group consisting of a silicon substrate, an insulator substrate, and a sapphire substrate.  
   
   
       61 . The method of  claim 58 , wherein forming a first dielectric layer includes forming the first dielectric layer having a top surface over the opening.  
   
   
       62 . The method of  claim 58 , wherein forming a first dielectric layer includes forming the first dielectric layer having a top surface that is within the opening.  
   
   
       63 . The method of  claim 58 , wherein: 
 forming a first dielectric layer includes forming the first dielectric layer through an ozone-TEOS deposition; and    forming a second dielectric layer includes forming the second dielectric layer through an ozone-TEOS deposition.    
   
   
       64 . The method of  claim 58 , wherein: 
 forming a first dielectric layer includes forming the first dielectric layer at a first process setting; and    forming a second dielectric layer includes forming the second dielectric layer at a second process setting at a predetermined relationship with the first process setting.    
   
   
       65 . The method of  claim 64 , wherein the first process setting and the second process setting are selected from the group consisting of temperature, reactor chamber pressure, dopant concentration, flow rate, and shower head spacing.  
   
   
       66 . The method of  claim 58 , wherein: 
 forming a first dielectric layer includes forming the first dielectric layer at a first temperature; and    forming a second dielectric layer includes forming the second layer at a second temperature, the second temperature being less than the first temperature.    
   
   
       67 . The method of  claim 58 , wherein: 
 forming a first dielectric layer includes forming the first dielectric layer at a first pressure; and    forming a second dielectric layer includes forming the second dielectric layer at a second pressure, the second pressure being greater than the first pressure.    
   
   
       68 . The method of  claim 58 , wherein: 
 forming a first dielectric layer includes forming the first dielectric layer at a first dopant concentration; and    forming a second dielectric layer includes forming the second layer at a second dopant concentration, the first dopant concentration being less than the second dopant concentration.    
   
   
       69 . The method of  claim 58 , wherein: 
 forming a first dielectric layer includes forming the first dielectric layer at a first total TEOS and dopant flow rate; and    forming a second dielectric layer includes forming the second layer at a second total TEOS and dopant flow rate, the first total TEOS and dopant flow rate being less than the second total TEOS and dopant flow rate.    
   
   
       70 . The method of  claim 58 , wherein: 
 forming a first dielectric layer includes:    providing a shower head at a first distance from the substrate, and providing through the shower head constituents forming the first layer; and    forming the second dielectric layer includes:    providing the shower head at a second distance from the substrate, the    second distance lower than the first distance, and providing through the shower head constituents forming the second layer.    
   
   
       71 . A method of forming a dielectric layer over a surface having at least one opening therein during the manufacture of a semiconductor device, comprising: 
 providing a substrate;    forming an opening relative to the substrate, the opening having an aspect ratio greater than about two;    forming a first dielectric layer at a first deposition rate over the surface and in the opening such that the first dielectric layer is substantially free of voids; and    forming a second dielectric layer at a second deposition rate greater than the first deposition rate over the first dielectric layer, the second layer filling the portion of the opening not filled with the first dielectric layer and having a top surface over the opening.    
   
   
       72 . The method of  claim 71 , wherein forming an opening includes forming an opening in the substrate.  
   
   
       73 . The method of  claim 71 , wherein forming an opening includes forming an opening on the substrate.  
   
   
       74 . The method of  claim 71 , wherein forming an opening includes forming a plurality of structures on the substrate so that the plurality of structures forms an opening.  
   
   
       75 . The method of  claim 74 , wherein forming a plurality the structures includes forming a plurality of conductors.  
   
   
       76 . A method of forming a dielectric layer over a surface having at least one opening therein, comprising: 
 forming a first dielectric layer at a first deposition rate over the surface and in the opening such that the first dielectric layer is substantially free of voids, the opening having an aspect ratio greater than about two, the first layer being formed at a first process setting; and    forming a second and final dielectric layer at a second deposition rate greater than the first deposition rate over the first dielectric layer, at least one of the first and the second layer filling the opening such that the opening is substantially free of voids, the second layer having a top surface that is not within the opening and being formed at a second process setting at a predetermined relationship with the first process setting.    
   
   
       77 . The method of  claim 76 , wherein the first process setting and the second process setting are selected from the group consisting of temperature, reactor chamber pressure, dopant concentration, flow rate, and shower head spacing.