Methods of etching a contact opening over a node location on a semiconductor substrate

Abstract

A chemical vapor deposition method includes providing a semiconductor substrate within a chemical vapor deposition chamber. At least one liquid deposition precursor is vaporized with a vaporizer to form a flowing vaporized precursor stream. The flowing vaporized precursor stream is initially bypassed from entering the chamber for a first period of time while the substrate is in the deposition chamber. After the first period of time, the flowing vaporized precursor stream is directed to flow into the chamber with the substrate therein under conditions effective to chemical vapor deposit a layer over the substrate. A method of etching a contact opening over a node location on a semiconductor substrate is disclosed.

1 - 3 . (canceled)  
   
   
       4 . A chemical vapor deposition method comprising: 
 providing a semiconductor substrate within a chemical vapor deposition chamber;    vaporizing a first liquid deposition precursor with a first vaporizer forming a flowing first vaporized precursor;    vaporizing a second deposition precursor with a second vaporizer forming a flowing second vaporized precursor;    bypassing at least one of the flowing first and the second precursors from entering the chamber for a first period of time while the substrate is in the deposition chamber; and    after the first period of time, directing the at least one bypassed flowing precursor to flow into the chamber with the substrate therein.    
   
   
       5 . The method of  claim 4  comprising bypassing flowing both the first and the second precursors from entering the chamber for the first period of time while the substrate is in the deposition chamber, the directing comprising directing both the first and second precursors to flow into the chamber with the substrate therein.  
   
   
       6 . The method of  claim 4  comprising bypassing the flowing first precursor during the first period, and starting vaporizing of the second deposition precursor after said bypassing.  
   
   
       7 . The method of  claim 4  wherein the directing comprises directing the at least one bypassed flowing precursor to flow into the chamber with the substrate therein effective to chemical vapor deposit a layer on the substrate.  
   
   
       8 . The method of  claim 4  comprising bypass flowing both the first and the second precursors from entering the chamber for the first period of time while the substrate is in the deposition chamber, the directing comprising directing both the first and second precursors to flow into the chamber with the substrate therein effective to chemical vapor deposit a layer on the substrate.  
   
   
       9 . The method of  claim 4  wherein the flowing of the at least one of the first and second precursors during the first period of time is not steady state during all of said first period.  
   
   
       10 . The method of  claim 4  wherein the period of time is effective to achieve steady state flow of the at least one of the first and second precursors at conclusion of said period.  
   
   
       11 . A chemical vapor deposition method comprising: 
 providing a semiconductor substrate within a chemical vapor deposition chamber;    vaporizing a first liquid deposition precursor with a first vaporizer forming a flowing first vaporized precursor;    vaporizing a second liquid deposition precursor with a second vaporizer forming a flowing second vaporized precursor comprising a first dopant;    vaporizing a third deposition precursor with a third vaporizer forming a flowing third vaporized precursor comprising a second dopant different from the first dopant;    directing the flowing first vaporized precursor and the flowing second vaporized precursor to flow into the chamber with the substrate therein under conditions effective to chemical vapor deposit a first layer comprising the first dopant over the substrate; and    after depositing the first layer, flowing the vaporized third precursor into the chamber while flowing the first vaporized precursor and the second vaporized precursor into the chamber with the substrate therein under conditions effective to chemical vapor deposit a second layer over the substrate comprising the first and second dopants, the second layer comprising a greater concentration of the second dopant than any concentration of the second dopant in the first layer.    
   
   
       12 . The method of  claim 11  comprising depositing the first layer to a thickness of from about 50 Angstroms to about 500 Angstroms.  
   
   
       13 . The method of  claim 11  comprising depositing the first layer to a thickness of from about 100 Angstroms to about 300 Angstroms.  
   
   
       14 . The method of  claim 11  wherein vaporizing of the third precursor starts after depositing the first layer.  
   
   
       15 . The method of  claim 11  wherein no third vaporized precursor flows to the chamber during the first layer depositing.  
   
   
       16 . The method of  claim 11  wherein no third vaporized precursor flows to the chamber during the first layer depositing, with the concentration of the second dopant in the first layer being substantially zero.  
   
   
       17 . The method of  claim 11  wherein some third vaporized precursor flows to the chamber during the first layer depositing, with the concentration of the second dopant in the first layer being at some desired measurable value.  
   
   
       18 . The method of  claim 11  comprising flowing another vapor precursor to the chamber during depositing at least one of the first and second layers.  
   
   
       19 . The method of  claim 11  comprising combining the vaporized first and second precursors prior to flowing them to the chamber to chemical vapor deposit the first layer.  
   
   
       20 . The method of  claim 11  comprising combining the vaporized first, second, and third precursors prior to flowing them to the chamber to chemical vapor deposit the second layer.  
   
   
       21 . The method of  claim 11  comprising stopping flow of the first and second vaporized precursors to the chamber intermediate the chemical vapor depositing of the first and second layers.  
   
   
       22 . The method of  claim 11  comprising continuing to vaporize the first and second precursors while stopping flow of the first and second vaporized precursors to the chamber intermediate the chemical vapor depositing of the first and second layers.  
   
   
       23 . The method of  claim 11  comprising bypassing flow of the first and second vaporized precursors to the chamber prior to the directing.  
   
   
       24 . The method of  claim 11  comprising bypassing flow of the first and second vaporized precursors to the chamber after depositing the first layer prior to depositing the second layer.  
   
   
       25 . A chemical vapor deposition method comprising: 
 providing a semiconductor substrate within a chemical vapor deposition chamber;    providing first, second and third liquid vaporizers having respective first, second and third exiting vapor flowpaths which combine to form a combined flowpath;    vaporizing a first liquid deposition precursor with the first vaporizer forming a flowing first vaporized precursor within the combined flowpath;    vaporizing a second liquid deposition precursor with the second vaporizer forming a flowing second vaporized precursor comprising a first dopant within the combined flowpath with the flowing first vaporized precursor;    initially bypassing the flowing first and second vaporized precursors within the combined flowpath from entering the chamber for a first period of time while the substrate is in the deposition chamber;    after the first period of time, directing the flowing first and second vaporized precursors within the combined flowpath to flow into the chamber with the substrate therein under conditions effective to chemical vapor deposit a first layer comprising the first dopant over the substrate;    after depositing the first layer, second bypassing the flowing first and second vaporized precursors within the combined flowpath from entering the chamber while the substrate is in the deposition chamber;    vaporizing a third deposition precursor with the third vaporizer forming a flowing third vaporized precursor comprising a second dopant different from the first dopant, and combining the flowing third vaporized precursor with the flowing second bypassed first and second vaporized precursors in the combined flowpath and bypassing the combined flowing first, second and third vaporized precursors within the combined flowpath from entering the chamber for a second period of time while the substrate is in the deposition chamber; and    after the second period of time, directing the combined flowing first, second and third vaporized precursors within the combined flowpath to flow into the chamber with the substrate therein under conditions effective to chemical vapor deposit a second layer comprising the first and second dopants over the first layer, the second layer comprising a greater concentration of the second dopant than any concentration of the second dopant in the first layer.    
   
   
       26 . The method of  claim 25  flowing a fourth precursor to the chamber separate from the combined flowpath during forming of each of the first and second layers.  
   
   
       27 . The method of  claim 25  comprising chemical vapor depositing the second layer onto the first layer.  
   
   
       28 . The method of  claim 25  wherein no third vaporized precursor flows to the chamber during the first layer depositing.  
   
   
       29 . The method of  claim 25  wherein no third vaporized precursor flows to the chamber during the first layer depositing, with the concentration of the second dopant in the first layer being substantially zero.  
   
   
       30 . The method of  claim 25  wherein some third vaporized precursor flows to the chamber during the first layer depositing, with the concentration of the second dopant in the first layer being at some desired measurable value.  
   
   
       31 . The method of  claim 25  wherein the flowing of the vaporized precursors during the first and second periods of time is not steady state during all of said first and second periods.  
   
   
       32 . The method of  claim 25  wherein the first and second periods of time are effective to achieve steady state flow of the vaporized precursors at conclusion of said respective periods.  
   
   
       33 . The method of  claim 25  comprising depositing the first layer to a thickness of from about 50 Angstroms to about 500 Angstroms.  
   
   
       34 . The method of  claim 25  comprising depositing the first layer to a thickness of from about 100 Angstroms to about 300 Angstroms.  
   
   
       35 - 72 . (canceled)  
   
   
       73 . A chemical vapor deposition method comprising: 
 providing a semiconductor substrate within a chemical vapor deposition chamber;    providing first and second liquid vaporizers having respective first and second flowpaths which combine to form a combined flowpath;    vaporizing a first liquid deposition precursor with the first vaporizer forming a flowing first vaporized precursor within the combined flowpath;    vaporizing a second liquid deposition precursor with the second vaporizer forming a flowing second vaporized precursor within the combined flowpath with the flowing first vaporized precursor;    bypassing the flowing first and second vaporized precursors within the combined flowpath from entering the chamber for a first period of time while the substrate is in the deposition chamber; and    after the first period of time, directing the flowing first and second vaporized precursors within the combined flowpath to flow into the chamber with the substrate therein under conditions effective to chemical vapor deposit a layer over the substrate.    
   
   
       74 . The method of  claim 73  wherein the flowing of the first and second vaporized precursors within the combined flowpath during the first period of time is not steady state during all of said first period.  
   
   
       75 . The method of  claim 73  wherein the period of time is effective to achieve steady state flow of the first and second vaporized precursors within the combined flowpath at conclusion of said period.  
   
   
       76 . A chemical vapor deposition method comprising: 
 providing a semiconductor substrate within a chemical vapor deposition chamber;    providing first and second liquid vaporizers having respective first and second flowpaths which combine to form a combined flowpath;    vaporizing a first liquid deposition precursor with the first vaporizer forming a flowing first vaporized precursor within the combined flowpath;    vaporizing a second liquid deposition precursor with the second vaporizer forming a flowing second vaporized precursor comprising a dopant within the combined flowpath with the flowing first vaporized precursor;    bypassing the flowing first and second vaporized precursors within the combined flowpath from entering the chamber for a first period of time while the substrate is in the deposition chamber; and    after the first period of time, directing the flowing first and second vaporized precursors within the combined flowpath to flow into the chamber with the substrate therein under conditions effective to chemical vapor deposit a layer comprising the dopant over the substrate.    
   
   
       77 . The method of  claim 76  wherein the flowing of the first and second vaporized precursors within the combined flowpath during the first period of time is not steady state during all of said first period.  
   
   
       78 . The method of  claim 76  wherein the period of time is effective to achieve steady state flow of the first and second vaporized precursors within the combined flowpath at conclusion of said period.