Inventor · disambiguated record
Donald L. Yates
Also filed as: YATES DONALD L
67 granted patents·7 pending applications·1,148 citations·filing 1997–2014
99Inventor score
Top patents by PatentIndex Score
74 records- 0195US6762132B1Compositions for dissolution of low-K dielectric films, and methods of useMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 13, 2004·51 cites·12 claims
- 0295US6486108B1Cleaning composition useful in semiconductor integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 26, 2002·41 cites·9 claims
- 0394US6517738B1Acid blend for removing etch residueMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 11, 2003·55 cites·16 claims
- 0493US6703319B1Compositions and methods for removing etch residueMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 9, 2004·63 cites·44 claims
- 0593US6673675B2Methods of fabricating an MRAM device using chemical mechanical polishingMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 6, 2004·44 cites·28 claims
- 0693US6562726B1Acid blend for removing etch residueMICRON TECHNOLOGY INC·Filed 1999·Granted May 13, 2003·117 cites·103 claims
- 0792US6783695B1Acid blend for removing etch residueMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 31, 2004·52 cites·12 claims
- 0891US6350322B1Method of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 26, 2002·65 cites·26 claims
- 0991US6316370B1Method for etching doped polysilicon with high selectivity to undoped polysiliconMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 13, 2001·47 cites·45 claims
- 1089US6656289B2Method of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 2, 2003·23 cites·25 claims
- 1187US7285811B2MRAM device for preventing electrical shorts during fabricationMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 23, 2007·12 cites·16 claims
- 1287US6743641B2Method of improving surface planarity prior to MRAM bit material depositionMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 1, 2004·32 cites·24 claims
- 1387US6453914B2Acid blend for removing etch residueMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 24, 2002·63 cites·67 claims
- 1486US6656372B2Methods of making magnetoresistive memory devicesMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 2, 2003·35 cites·43 claims
- 1586US6645311B2Method of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 11, 2003·18 cites·16 claims
- 1686US6601595B2Method of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 5, 2003·19 cites·19 claims
- 1786US6012469AEtch residue cleanMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 11, 2000·68 cites·43 claims
- 1884US6794704B2Method for enhancing electrode surface area in DRAM cell capacitorsMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 21, 2004·24 cites·51 claims
- 1983US6192899B1Etch residue clean with aqueous HF/organic solutionMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 27, 2001·24 cites·23 claims
- 2081US7422639B2Method of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 9, 2008·3 cites·18 claims
- 2181US5939336AAqueous solutions of ammonium fluoride in propylene glycol and their use in the removal of etch residues from silicon substratesMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 17, 1999·49 cites·25 claims
- 2280US7307306B2Etch mask and method of forming a magnetic random access memory structureMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 11, 2007·5 cites·30 claims
- 2378US6573554B2Localized masking for semiconductor structure developmentMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 3, 2003·13 cites·48 claims
- 2476US6639266B1Modifying material removal selectivity in semiconductor structure developmentMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 28, 2003·19 cites·57 claims
- 2575US8632692B2Compositions for use in semiconductor devicesYATES DONALD L·Filed 2008·Granted Jan 21, 2014·2 cites·13 claims
- 2674US6358793B1Method for localized masking for semiconductor structure developmentMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 19, 2002·30 cites·74 claims
- 2773US7642157B2Method for enhancing electrode surface area in DRAM cell capacitorsMICRON TECHNOLOGY INC·Filed 2006·Granted Jan 5, 2010·3 cites·32 claims
- 2873US7148555B2Method for enhancing electrode surface area in DRAM cell capacitorsMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 12, 2006·12 cites·66 claims
- 2973US7135444B2Cleaning composition useful in semiconductor integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 14, 2006·6 cites·22 claims
- 3073US7119388B2MRAM device fabricated using chemical mechanical polishingMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 10, 2006·11 cites·15 claims
- 3172US6867148B2Removal of organic material in integrated circuit fabrication using ozonated organic acid solutionsMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 15, 2005·14 cites·28 claims
- 3270US6896740B2Method of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 2001·Granted May 24, 2005·6 cites·25 claims
- 3370US6641677B1Method of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 4, 2003·18 cites·34 claims
- 3468US6607001B1System of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 19, 2003·17 cites·22 claims
- 3567US7163019B2Method of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 16, 2007·5 cites·38 claims
- 3666US7468534B2Localized masking for semiconductor structure developmentMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 23, 2008·1 cites·42 claims
- 3765US6090721AAqueous solutions of ammonium fluoride in propylene glycol and their use in the removal of etch residues from silicon substratesMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 18, 2000·24 cites·15 claims
- 3864US8951433B2Compositions for use in semiconductor devicesMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 10, 2015·0 cites·5 claims
- 3964US7482176B2Etch mask and method of forming a magnetic random access memory structureMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 27, 2009·1 cites·33 claims
- 4064US2015097139A1Compositions for use in semiconductor devicesMICRON TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 4163US7087561B2Cleaning composition useful in semiconductor integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 8, 2006·2 cites·41 claims
- 4263US7015529B2Localized masking for semiconductor structure developmentMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 21, 2006·5 cites·13 claims
- 4361US7573121B2Method for enhancing electrode surface area in DRAM cell capacitorsMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 11, 2009·1 cites·18 claims
- 4461US7521373B2Compositions for dissolution of low-k dielectric films, and methods of useMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 21, 2009·3 cites·28 claims
- 4561US7312159B2Compositions for dissolution of low-k dielectric films, and methods of useMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 25, 2007·3 cites·48 claims
- 4661US7204889B2Method of reducing water spotting and oxide growth on a semiconductor structureMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 17, 2007·3 cites·34 claims
- 4760US7067466B2Cleaning composition useful in semiconductor integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 27, 2006·1 cites·84 claims
- 4859US7868369B2Localized masking for semiconductor structure developmentMICRON TECHNOLOGY INC·Filed 2008·Granted Jan 11, 2011·0 cites·17 claims
- 4959US7018937B2Compositions for removal of processing byproducts and method for using sameMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 28, 2006·5 cites·7 claims
- 5058US2008283796A1Compositions for Dissolution of Low-K Dielectric Films, and Methods of UseYATES DONALD L·Filed 2008·Application pending·0 cites
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →