Compositions for use in semiconductor devices

Abstract

An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove the photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

1 . A composition comprising hydrogen fluoride pyridinium, an inorganic acid, and a solvent. 
     
     
         2 . The composition of  claim 1 , wherein the composition further comprises tetramethylammonium fluoride, triethylamine trihydrofluoride, or combinations thereof. 
     
     
         3 . The composition of  claim 1 , wherein the inorganic acid comprises sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, or combinations thereof. 
     
     
         4 . The composition of  claim 1 , wherein the composition comprises an about 1:5 ratio (volume/volume) of hydrogen fluoride pyridinium:90% aqueous sulfuric acid. 
     
     
         5 . The composition of  claim 1 , wherein the composition comprises from about 13% by volume to about 19% by volume of hydrogen fluoride pyridinium and from about 80% by volume to about 86% by volume of 90% aqueous sulfuric acid. 
     
     
         6 . The composition of  claim 1 , wherein the solvent comprises water. 
     
     
         7 . A composition comprising an aqueous solution of hydrogen fluoride pyridinium and an inorganic acid in a ratio of about 1:5 (v/v). 
     
     
         8 . A composition comprising:
 hydrogen fluoride pyridinium;   an inorganic acid;   an organic fluorine compound comprising tetramethylammonium fluoride, triethylamine trihydrofluoride, or combinations thereof; and   water,   the hydrogen fluoride pyridinium and the inorganic acid present at a ratio of about 1:5 (v/v).   
     
     
         9 . The composition of  claim 8 , wherein the inorganic acid comprises sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, or combinations thereof. 
     
     
         10 . A composition comprising:
 hydrogen fluoride pyridinium at from about 13% by volume to about 19% by volume; and   an inorganic acid at from about 80% by volume to about 86% by volume.   
     
     
         11 . The composition of  claim 10 , further comprising tetramethylammonium fluoride, triethylamine trihydrofluoride, or combinations thereof. 
     
     
         12 . The composition of  claim 10 , wherein the inorganic acid comprises sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, or combinations thereof.