Inventor · disambiguated record
Naushad K. Variam
Also filed as: VARIAM NAUSHAD · VARIAM NAUSHAD K
21 granted patents·12 pending applications·33 citations·filing 2004–2024
91Inventor score
Files withAPPLIED MATERIALS INC17VARIAN SEMICONDUCTOR EQUIPMENT ASS INC8VARIAN SEMICONDUCTOR EQUIPMENT5VERIAN SEMICONDUCTOR EQUIPMENT1WALTHER STEVE1
Top patents by PatentIndex Score
33 records- 0193US11942361B2Semiconductor device cavity formation using directional depositionAPPLIED MATERIALS INC·Filed 2021·Granted Mar 26, 2024·2 cites·15 claims
- 0293US11462546B2Dynamic random access device including two-dimensional array of fin structuresVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2020·Granted Oct 4, 2022·3 cites·14 claims
- 0393US10403552B1Replacement gate formation with angled etch and depositionVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Sep 3, 2019·7 cites·20 claims
- 0487US7326937B2Plasma ion implantation systems and methods using solid source of dopant materialVERIAN SEMICONDUCTOR EQUIPMENT·Filed 2005·Granted Feb 5, 2008·17 cites·26 claims
- 0575US10510610B2Structure and method of forming fin device having improved fin linerVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Dec 17, 2019·1 cites·16 claims
- 0673US10607999B2Techniques and structure for forming dynamic random access deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Mar 31, 2020·1 cites·16 claims
- 0765US9679776B2Masking for high temperature implantsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Jun 13, 2017·1 cites·18 claims
- 0863US10971403B2Structure and method of forming fin device having improved fin linerVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2019·Granted Apr 6, 2021·0 cites·14 claims
- 0962US12230691B2Three dimensional device formation using early removal of sacrificial heterostructure layerAPPLIED MATERIALS INC·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 1062US11217491B2Replacement gate formation with angled etch and depositionVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2019·Granted Jan 4, 2022·0 cites·20 claims
- 1160US12300494B2Ion implantation process to form punch through stopperAPPLIED MATERIALS INC·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 1260US11948832B2Bottom implant and airgap isolation for nanosheet semiconductor devicesAPPLIED MATERIALS INC·Filed 2021·Granted Apr 2, 2024·0 cites·19 claims
- 1360US2025194127A1High-temperature implant for gate-all-around devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1459US12463038B2Carbon and boron implantation for backside chemical mechanical planarization controlAPPLIED MATERIALS INC·Filed 2023·Granted Nov 4, 2025·0 cites·16 claims
- 1559US2025081592A1Contact resistance reduction for direct backside contactAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1659US2025294832A1Contact formation for back side power distributionAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1759US2025311380A1Sidewall doping for resistance reduction of gaa-like devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1858US2025194072A1Implant for transistor bitline contact and junction formationAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1957US2024404887A1High-temperature implant for gate-all-around devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2057US2025040186A1High-temperature implant for gate-all-around devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2156US11778832B2Wordline contact formation in NAND devicesAPPLIED MATERIALS INC·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 2256US7378335B2Plasma implantation of deuterium for passivation of semiconductor-device interfacesVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2005·Granted May 27, 2008·1 cites·19 claims
- 2354US7544959B2In situ surface contamination removal for ion implantingVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2008·Granted Jun 9, 2009·0 cites·10 claims
- 2453US10903211B1Gate devices and methods of formation using angled ionsAPPLIED MATERIALS INC·Filed 2019·Granted Jan 26, 2021·0 cites·20 claims
- 2548US10692775B2Fin damage reduction during punch through implantation of FinFET deviceAPPLIED MATERIALS INC·Filed 2018·Granted Jun 23, 2020·0 cites·18 claims
- 2648US10686033B2Fin damage reduction during punch through implantation of FinFET deviceAPPLIED MATERIALS INC·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 2747US9337314B2Technique for selectively processing three dimensional deviceVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted May 10, 2016·0 cites·19 claims
- 2845US2021119022A1Methods for forming ultra-shallow junctions having improved activationAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 2944US10720357B2Method of forming transistor device having fin cut regionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jul 21, 2020·0 cites·13 claims
- 3044US2007069157A1Methods and apparatus for plasma implantation with improved dopant profileVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2005·Application pending·0 cites
- 3139US2006205192A1Shallow-junction fabrication in semiconductor devices via plasma implantation and depositionVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2005·Application pending·0 cites
- 3238US2007048984A1Metal work function adjustment by ion implantationWALTHER STEVEN·Filed 2005·Application pending·0 cites
- 3336US2006040499A1In situ surface contaminant removal for ion implantingWALTHER STEVE·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →