Inventor · disambiguated record
Herbert L. Ho
Also filed as: HO HERBERT · HO HERBERT L · HO HERBERT LEI
117 granted patents·10 pending applications·2,912 citations·filing 1993–2023
99Inventor score
Top patents by PatentIndex Score
127 records- 0198US8129797B2Work function engineering for eDRAM MOSFETsCHEN XIANGDONG·Filed 2008·Granted Mar 6, 2012·120 cites·12 claims
- 0298US7118986B2STI formation in semiconductor device including SOI and bulk silicon regionsIBM·Filed 2004·Granted Oct 10, 2006·258 cites·26 claims
- 0397US7276751B2Trench metal-insulator-metal (MIM) capacitors integrated with middle-of-line metal contacts, and method of fabricating sameIBM·Filed 2005·Granted Oct 2, 2007·50 cites·19 claims
- 0496US11145725B2Heterojunction bipolar transistorGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 12, 2021·4 cites·20 claims
- 0596US8492820B2Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuitANDERSON BRENT A·Filed 2012·Granted Jul 23, 2013·20 cites·19 claims
- 0696US8008713B2Vertical SOI trench SONOS cellIBM·Filed 2009·Granted Aug 30, 2011·37 cites·11 claims
- 0796US7816728B2Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applicationsIBM·Filed 2005·Granted Oct 19, 2010·45 cites·20 claims
- 0896US6319794B1Structure and method for producing low leakage isolation devicesIBM·Filed 1998·Granted Nov 20, 2001·258 cites·19 claims
- 0996US5447884AShallow trench isolation with thin nitride linerIBM·Filed 1994·Granted Sep 5, 1995·264 cites·9 claims
- 1095US5763315AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Jun 9, 1998·199 cites·9 claims
- 1194US7514323B2Vertical SOI trench SONOS cellIBM·Filed 2005·Granted Apr 7, 2009·22 cites·9 claims
- 1294US6046487AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Apr 4, 2000·169 cites·4 claims
- 1392US8120095B2High-density, trench-based non-volatile random access SONOS memory SOC applicationsHO HERBERT L·Filed 2007·Granted Feb 21, 2012·31 cites·9 claims
- 1492US7682896B2Trench metal-insulator-metal (MIM) capacitors integrated with middle-of-line metal contacts, and method of fabricating sameIBM·Filed 2007·Granted Mar 23, 2010·20 cites·18 claims
- 1592US5827765ABuried-strap formation in a dram trench capacitorSIEMENS AG·Filed 1996·Granted Oct 27, 1998·81 cites·26 claims
- 1691US7888723B2Deep trench capacitor in a SOI substrate having a laterally protruding buried strapIBM·Filed 2008·Granted Feb 15, 2011·17 cites·25 claims
- 1791US7550359B1Methods involving silicon-on-insulator trench memory with implanted plateIBM·Filed 2008·Granted Jun 23, 2009·17 cites·1 claims
- 1891US7388244B2Trench metal-insulator-metal (MIM) capacitors and method of fabricating sameIBM·Filed 2005·Granted Jun 17, 2008·21 cites·15 claims
- 1991US5876788AHigh dielectric TiO2 -SiN composite films for memory applicationsIBM·Filed 1997·Granted Mar 2, 1999·97 cites·31 claims
- 2090US7575970B2Deep trench capacitor through SOI substrate and methods of formingIBM·Filed 2006·Granted Aug 18, 2009·20 cites·16 claims
- 2190US5670805AControlled recrystallization of buried strap in a semiconductor memory deviceTOSHIBA KK·Filed 1996·Granted Sep 23, 1997·59 cites·1 claims
- 2288US8193067B2Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuitANDERSON BRENT A·Filed 2009·Granted Jun 5, 2012·13 cites·19 claims
- 2388US7951666B2Deep trench capacitor and methodIBM·Filed 2007·Granted May 31, 2011·15 cites·12 claims
- 2488US7485537B2Method of fabricating a vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thicknessIBM·Filed 2006·Granted Feb 3, 2009·12 cites·1 claims
- 2588US6815749B1Backside buried strap for SOI DRAM trench capacitorIBM·Filed 2003·Granted Nov 9, 2004·38 cites·8 claims
- 2687US8159040B2Metal gate integration structure and method including metal fuse, anti-fuse and/or resistorCOOLBAUGH DOUGLAS D·Filed 2008·Granted Apr 17, 2012·15 cites·21 claims
- 2786US7911024B2Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereofIBM·Filed 2010·Granted Mar 22, 2011·6 cites·4 claims
- 2886US7750388B2Trench metal-insulator metal (MIM) capacitorsIBM·Filed 2007·Granted Jul 6, 2010·12 cites·14 claims
- 2986US7153737B2Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retentionIBM·Filed 2005·Granted Dec 26, 2006·11 cites·2 claims
- 3085US9793341B1Deep trench capacitor with metal plateGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 17, 2017·4 cites·19 claims
- 3185US7691716B2Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operationIBM·Filed 2008·Granted Apr 6, 2010·10 cites·5 claims
- 3285US6964897B2SOI trench capacitor cell incorporating a low-leakage floating body array transistorIBM·Filed 2003·Granted Nov 15, 2005·50 cites·25 claims
- 3385US5543348AControlled recrystallization of buried strap in a semiconductor memory deviceTOSHIBA KK·Filed 1995·Granted Aug 6, 1996·47 cites·15 claims
- 3484US9754945B2Non-volatile memory device employing a deep trench capacitorGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 5, 2017·4 cites·10 claims
- 3584US8372721B2Work function engineering for eDRAM MOSFETsIBM·Filed 2012·Granted Feb 12, 2013·6 cites·8 claims
- 3684US6670675B2Deep trench body SOI contacts with epitaxial layer formationIBM·Filed 2001·Granted Dec 30, 2003·35 cites·15 claims
- 3784US6297127B1Self-aligned deep trench isolation to shallow trench isolationIBM·Filed 2000·Granted Oct 2, 2001·40 cites·9 claims
- 3883US7705386B2Providing isolation for wordline passing over deep trench capacitorIBM·Filed 2008·Granted Apr 27, 2010·7 cites·20 claims
- 3983US6140208AShallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applicationsIBM·Filed 1999·Granted Oct 31, 2000·72 cites·65 claims
- 4081US11217685B2Heterojunction bipolar transistor with marker layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 4, 2022·1 cites·20 claims
- 4181US6635525B1Method of making backside buried strap for SOI DRAM trench capacitorIBM·Filed 2002·Granted Oct 21, 2003·25 cites·9 claims
- 4280US9059322B2Semiconductor-on-insulator (SOI) deep trench capacitorIBM·Filed 2012·Granted Jun 16, 2015·5 cites·20 claims
- 4380US8298907B2Structure and method of forming enhanced array device isolation for implanted plate eDRAMHO HERBERT L·Filed 2011·Granted Oct 30, 2012·4 cites·18 claims
- 4480US8053823B2Simplified buried plate structure and process for semiconductor-on-insulator chipIBM·Filed 2005·Granted Nov 8, 2011·8 cites·11 claims
- 4580US7193262B2Low-cost deep trench decoupling capacitor device and process of manufactureIBM·Filed 2004·Granted Mar 20, 2007·26 cites·16 claims
- 4679US9564505B2Changing effective work function using ion implantation during dual work function metal gate integrationGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 7, 2017·4 cites·6 claims
- 4779US5792685AThree-dimensional device layout having a trench capacitorSIEMENS AG·Filed 1996·Granted Aug 11, 1998·39 cites·1 claims
- 4878US7791124B2SOI deep trench capacitor employing a non-conformal inner spacerIBM·Filed 2008·Granted Sep 7, 2010·7 cites·8 claims
- 4978US7375410B2Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereofIBM·Filed 2004·Granted May 20, 2008·17 cites·14 claims
- 5078US5656535AStorage node process for deep trench-based DRAMSIEMENS AG·Filed 1996·Granted Aug 12, 1997·42 cites·20 claims
Showing the top 50 of 127 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →