Inventor · disambiguated record
Robert P. Vaudo
Also filed as: VAUDO ROBERT · VAUDO ROBERT P
33 granted patents·4 pending applications·2,676 citations·filing 1997–2013
98Inventor score
Files withCREE INC21ADVANCED TECH MATERIALS6FLYNN JEFFREY S3NEXTREME THERMAL SOLUTIONS INC2XU XUEPING2
Top patents by PatentIndex Score
37 records- 0199US6596079B1III-V nitride substrate boule and method of making and using the sameADVANCED TECH MATERIALS·Filed 2000·Granted Jul 22, 2003·427 cites·49 claims
- 0299US6156581AGaN-based devices using (Ga, AL, In)N base layersADVANCED TECH MATERIALS·Filed 1997·Granted Dec 5, 2000·507 cites·62 claims
- 0398US6765240B2Bulk single crystal gallium nitride and method of making sameCREE INC·Filed 2001·Granted Jul 20, 2004·200 cites·29 claims
- 0498US6488767B1High surface quality GaN wafer and method of fabricating sameADVANCED TECH MATERIALS·Filed 2001·Granted Dec 3, 2002·209 cites·51 claims
- 0597US6951695B2High surface quality GaN wafer and method of fabricating sameCREE INC·Filed 2002·Granted Oct 4, 2005·115 cites·91 claims
- 0697US6533874B1GaN-based devices using thick (Ga, Al, In)N base layersADVANCED TECH MATERIALS·Filed 2000·Granted Mar 18, 2003·232 cites·34 claims
- 0796US7170095B2Semi-insulating GaN and method of making the sameCREE INC·Filed 2003·Granted Jan 30, 2007·113 cites·112 claims
- 0896US6447604B1Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devicesADVANCED TECH MATERIALS·Filed 2000·Granted Sep 10, 2002·306 cites·73 claims
- 0996US6440823B1Low defect density (Ga, Al, In)N and HVPE process for making sameADVANCED TECH MATERIALS·Filed 1998·Granted Aug 27, 2002·276 cites·17 claims
- 1094US7915152B2III-V nitride substrate boule and method of making and using the sameCREE INC·Filed 2010·Granted Mar 29, 2011·12 cites·27 claims
- 1193US7332031B2Bulk single crystal gallium nitride and method of making sameCREE INC·Filed 2005·Granted Feb 19, 2008·14 cites·34 claims
- 1292US7879147B2Large area, uniformly low dislocation density GaN substrate and process for making the sameCREE INC·Filed 2007·Granted Feb 1, 2011·14 cites·26 claims
- 1392US7118813B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2003·Granted Oct 10, 2006·42 cites·29 claims
- 1491US6958093B2Free-standing (Al, Ga, In)N and parting method for forming sameCREE INC·Filed 2001·Granted Oct 25, 2005·58 cites·130 claims
- 1588US7390581B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2006·Granted Jun 24, 2008·9 cites·35 claims
- 1687US8174089B2High voltage switching devices and process for forming sameFLYNN JEFFREY S·Filed 2010·Granted May 8, 2012·6 cites·24 claims
- 1787US6943095B2Low defect density (Ga, A1, In) N and HVPE process for making sameCREE INC·Filed 2002·Granted Sep 13, 2005·35 cites·119 claims
- 1884US7794542B2Bulk single crystal gallium nitride and method of making sameCREE INC·Filed 2008·Granted Sep 14, 2010·5 cites·30 claims
- 1983US8390101B2High voltage switching devices and process for forming sameFLYNN JEFFREY S·Filed 2012·Granted Mar 5, 2013·4 cites·20 claims
- 2083US7655197B2III-V nitride substrate boule and method of making and using the sameCREE INC·Filed 2003·Granted Feb 2, 2010·19 cites·66 claims
- 2183US7323256B2Large area, uniformly low dislocation density GaN substrate and process for making the sameCREE INC·Filed 2003·Granted Jan 29, 2008·19 cites·50 claims
- 2282US8212259B2III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substratesFLYNN JEFFREY S·Filed 2002·Granted Jul 3, 2012·22 cites·72 claims
- 2379US6972051B2Bulk single crystal gallium nitride and method of making sameCREE INC·Filed 2001·Granted Dec 6, 2005·13 cites·7 claims
- 2476US7972711B2Large area, uniformly low dislocation density GaN substrate and process for making the sameCREE INC·Filed 2008·Granted Jul 5, 2011·3 cites·28 claims
- 2575US7804019B2Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devicesNEXTREME THERMAL SOLUTIONS INC·Filed 2008·Granted Sep 28, 2010·2 cites·42 claims
- 2669US8043731B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2010·Granted Oct 25, 2011·1 cites·23 claims
- 2768US9190592B2Thin film thermoelectric devices having favorable crystal tiltNEXTREME THERMAL SOLUTIONS INC·Filed 2013·Granted Nov 17, 2015·2 cites·27 claims
- 2867US7700203B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2008·Granted Apr 20, 2010·1 cites·20 claims
- 2962US7795707B2High voltage switching devices and process for forming sameCREE INC·Filed 2003·Granted Sep 14, 2010·5 cites·38 claims
- 3060US8378463B2Orientation of electronic devices on mis-cut substratesCREE INC·Filed 2010·Granted Feb 19, 2013·2 cites·29 claims
- 3157US8698286B2High voltage switching devices and process for forming sameCREE INC·Filed 2013·Granted Apr 15, 2014·0 cites·29 claims
- 3254US7884447B2Laser diode orientation on mis-cut substratesCREE INC·Filed 2006·Granted Feb 8, 2011·3 cites·29 claims
- 3347US8728236B2Low dislocation density III-V nitride substrate including filled pits and process for making the sameXU XUEPING·Filed 2011·Granted May 20, 2014·0 cites·34 claims
- 3444US2009199887A1Methods of forming thermoelectric devices including epitaxial thermoelectric elements of different conductivity types on a same substrate and related structuresUNIV NORTH CAROLINA STATE·Filed 2009·Application pending·0 cites
- 3544US2006029832A1High surface quality GaN wafer and method of fabricating sameXU XUEPING·Filed 2005·Application pending·0 cites
- 3635US2007018198A1High electron mobility electronic device structures comprising native substrates and methods for making the sameBRANDES GEORGE R·Filed 2005·Application pending·0 cites
- 3730US2001008656A1Bulk single crystal gallium nitride and method of making sameFiled 1997·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →