Inventor · disambiguated record
Young Seok Kwon
Also filed as: KWON YOUNG SEOK
7 granted patents·5 pending applications·11 citations·filing 2006–2015
78Inventor score
Top patents by PatentIndex Score
12 records- 0171US8802536B2Phase-change memory device and method of fabricating the sameSK HYNIX INC·Filed 2013·Granted Aug 12, 2014·2 cites·16 claims
- 0269US7894729B2Microchip and method for repairing cartridgePARK & OPC CO LTD·Filed 2006·Granted Feb 22, 2011·4 cites·6 claims
- 0368US9006073B2Fabrication method of phase change memory device having self-aligned bottom electrodeSK HYNIX INC·Filed 2014·Granted Apr 14, 2015·2 cites·6 claims
- 0468US8508021B2Phase-change memory device and method of fabricating the sameLEE KEUN·Filed 2010·Granted Aug 13, 2013·2 cites·8 claims
- 0559US9112137B2Semiconductor device and method of fabricating the sameKIM JIN HYOCK·Filed 2012·Granted Aug 18, 2015·1 cites·14 claims
- 0651US8748860B2Phase change memory device having self-aligned bottom electrode and fabrication method thereofSK HYNIX INC·Filed 2012·Granted Jun 10, 2014·0 cites·3 claims
- 0748US9373788B2Method for fabricating semiconductor deviceSK HYNIX INC·Filed 2014·Granted Jun 21, 2016·0 cites·8 claims
- 0848US2015318329A1Semiconductor device and method of fabricating the sameSK HYNIX INC·Filed 2015·Application pending·0 cites
- 0948US2015318330A1Semiconductor device and method of fabricating the sameSK HYNIX INC·Filed 2015·Application pending·0 cites
- 1043US2013099188A1Phase-change memory device having multi-level cell and a method of manufacturing the sameKIM JIN HYOCK·Filed 2011·Application pending·0 cites
- 1137US2014301137A1Phase-change memory device having phase-change region divided into multi layers and operating method thereofSK HYNIX INC·Filed 2014·Application pending·0 cites
- 1231US2016072059A1Phase-change memory device having phase-change region divided into multi layers and operating method thereofSK HYNIX INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →