Semiconductor device and method of fabricating the same

Abstract

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

1 . A semiconductor device, comprising:
 a semiconductor substrate in which a word line region is formed; and   a barrier metal layer, formed of a metal nitride, arranged on the word line region and causing a Schottky junction, the barrier metal layer including:
 a first nitride material formed of a nitrified first material; and 
 a second nitride material formed of a nitrified second material, 
   wherein the barrier metal layer is formed of a mixture of the first nitride material and the second nitride material, and   where any one of the first material or the second material is rich in a metal used to form the metal nitride.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first material is titanium (Ti) and the second material is aluminum (Al). 
     
     
         3 . The semiconductor device of  claim 2 , wherein the first nitride material and the second nitride material include nitride materials deposited by atomic layer deposition (ALD. 
     
     
         4 - 26 . (canceled)