Inventor · disambiguated record
Charles W. Schietinger
Also filed as: SCHIETINGER CHARLES W
11 granted patents·3 pending applications·596 citations·filing 1990–2005
93Inventor score
Top patents by PatentIndex Score
14 records- 0194US5154512ANon-contact techniques for measuring temperature or radiation-heated objectsLUXTRON CORP·Filed 1990·Granted Oct 13, 1992·119 cites·32 claims
- 0292US5490728ANon-contact optical techniques for measuring surface conditionsLUXTRON CORP·Filed 1994·Granted Feb 13, 1996·96 cites·56 claims
- 0390US5166080ATechniques for measuring the thickness of a film formed on a substrateLUXTRON CORP·Filed 1991·Granted Nov 24, 1992·90 cites·28 claims
- 0489US7042581B2Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafersLUXTRON CORP·Filed 2004·Granted May 9, 2006·34 cites·18 claims
- 0589US6654132B1Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafersLUXTRON CORP·Filed 2000·Granted Nov 25, 2003·35 cites·21 claims
- 0688US5769540ANon-contact optical techniques for measuring surface conditionsLUXTRON CORP·Filed 1994·Granted Jun 23, 1998·84 cites·33 claims
- 0784US5310260ANon-contact optical techniques for measuring surface conditionsLUXTRON CORP·Filed 1992·Granted May 10, 1994·57 cites·33 claims
- 0879US5318362ANon-contact techniques for measuring temperature of radiation-heated objectsLUXTRON CORP·Filed 1992·Granted Jun 7, 1994·42 cites·31 claims
- 0968US6799137B2Wafer temperature measurement method for plasma environmentsENGELHARD CORP·Filed 2002·Granted Sep 28, 2004·14 cites·24 claims
- 1067US6934040B1Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafersLUXTRON CORP·Filed 2003·Granted Aug 23, 2005·10 cites·15 claims
- 1153US6570662B1Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafersLUXTRON CORP·Filed 1999·Granted May 27, 2003·15 cites·7 claims
- 1245US2006190211A1In-situ wafer parameter measurement method employing a hot susceptor as radiation source for reflectance measurementSCHIETINGER CHARLES W·Filed 2005·Application pending·0 cites
- 1343US2007095812A1In-situ wafer parameter measurement method employing a hot susceptor as a reflected light sourceSCHIETINGER CHARLES W·Filed 2005·Application pending·0 cites
- 1439US2003036877A1In-situ wafer parameter measurement method employing a hot susceptor as a reflected light sourceFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →