Inventor · disambiguated record
Yen-Tien Tung
Also filed as: TUNG YEN-TIEN
14 granted patents·10 pending applications·9 citations·filing 2021–2025
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD24
Top patents by PatentIndex Score
24 records- 0194US11527622B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 0293US11990522B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
- 0393US11894461B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 0491US12040372B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
- 0587US2025366075A1Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0686US2025351481A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0783US11489057B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 1, 2022·1 cites·20 claims
- 0882US12382691B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 0980US12288722B2Spacer structure for semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 1080US2025366002A1Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1180US2025063778A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1279US12477784B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 1379US2025338585A1Work-Function Layers in the Gates of pFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1478US2025261436A1Spacer structure for semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1577US2024332393A1Contact Structures In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1674US12166074B2Gate structure in semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 1774US2025031429A1Semiconductor structure with conductive carbon layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1870US11545397B2Spacer structure for semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 1969US12453153B2Work-function layers in the gates of pFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 2069US2023378305A1Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2168US12426292B2Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2266US11810960B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 2364US12142649B2Semiconductor structure with conductive carbon layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 2455US2024379870A1Thin film transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →