Inventor · disambiguated record
Seung Kim
Also filed as: KIM SEUNG · KIM SEUNG Y · KIM SEUNG YEON
13 granted patents·1 pending application·70 citations·filing 2012–2023
90Inventor score
Top patents by PatentIndex Score
14 records- 0194US9087870B2Integrated circuits including FINFET devices with shallow trench isolation that includes a thermal oxide layer and methods for making the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 21, 2015·18 cites·19 claims
- 0293US8722485B1Integrated circuits having replacement gate structures and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted May 13, 2014·19 cites·22 claims
- 0392US9123771B2Shallow trench isolation integration methods and devices formed therebyGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 1, 2015·13 cites·19 claims
- 0482US9385192B2Shallow trench isolation integration methods and devices formed therebyGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·3 cites·7 claims
- 0582US8969932B2Methods of forming a finfet semiconductor device with undoped finsGLOBALFOUNDRIES INC·Filed 2012·Granted Mar 3, 2015·6 cites·26 claims
- 0680US9287180B2Integrated circuits having finFETs with improved doped channel regions and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 15, 2016·3 cites·20 claims
- 0780US9105507B2Methods of forming a FinFET semiconductor device with undoped finsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 11, 2015·3 cites·20 claims
- 0873US9312145B2Conformal nitridation of one or more fin-type transistor layersGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·2 cites·18 claims
- 0968US9698269B2Conformal nitridation of one or more fin-type transistor layersGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 4, 2017·1 cites·13 claims
- 1067US9202697B2Forming a gate by depositing a thin barrier layer on a titanium nitride capGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 1, 2015·2 cites·11 claims
- 1156US12361882B2Electroluminescent display apparatus and method of driving the sameLG DISPLAY CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1250US9093476B2Integrated circuits having FinFETs with improved doped channel regions and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 28, 2015·0 cites·20 claims
- 1346US12001194B2Substrate processing apparatus, method of controlling the same, and storage medium having stored therein program thereofSEMES CO LTD·Filed 2019·Granted Jun 4, 2024·0 cites·7 claims
- 1436US2014113420A1Methods of avoiding shadowing when forming source/drain implant regions on 3d semiconductor devicesGLOBALFOUNDRIES INC·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →