Inventor · disambiguated record
Rajaram Shetty
Also filed as: SHETTY RAJARAM
6 granted patents·3 pending applications·1 citations·filing 2018–2025
68Inventor score
Top patents by PatentIndex Score
9 records- 0192US12398486B2Method and system for vertical gradient freeze 8 inch gallium arsenide substratesAXT INC·Filed 2023·Granted Aug 26, 2025·1 cites·18 claims
- 0278US12084790B2Low etch pit density 6 inch semi-insulating gallium arsenide wafersAXT INC·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 0377US2024426025A1Low etch pit density 6 inch semi-insulating gallium arsenide wafersAXT INC·Filed 2024·Application pending·0 cites
- 0476US2025230576A1Method and system for vertical gradient freeze 8 inch gallium arsenide substratesAXT INC·Filed 2025·Application pending·0 cites
- 0568US2022298673A1Method and system for vertical gradient freeze 8 inch gallium arsenide substratesAXT INC·Filed 2022·Application pending·0 cites
- 0665US11680340B2Low etch pit density 6 inch semi-insulating gallium arsenide wafersAXT INC·Filed 2019·Granted Jun 20, 2023·0 cites·14 claims
- 0757US11127867B2Monocrystalline germanium wafers, method for preparing the same, method for preparing ingots and use of monocrystalline wafersBEIJING TONGMEI XTAL TECH CO LTD·Filed 2018·Granted Sep 21, 2021·0 cites·18 claims
- 0856US12276044B2Low etch pit density gallium arsenide crystals with boron dopantAXT INC·Filed 2019·Granted Apr 15, 2025·0 cites·11 claims
- 0951US12336319B2Germanium single-crystal wafer, method for preparing germanium single-crystal wafer, method for preparing crystal bar, and use of single-crystal waferBEIJING TONGMEI XTAL TECH CO LTD·Filed 2020·Granted Jun 17, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →