Assignee
AXT INC
US·15 granted patents·8 pending applications·268 citations·filing 2000–2025
Top patents by PatentIndex Score
23 records- 0192US12398486B2Method and system for vertical gradient freeze 8 inch gallium arsenide substratesAXT INC·Filed 2023·Granted Aug 26, 2025·1 cites·18 claims
- 0292US6650018B1High power, high luminous flux light emitting diode and method of making sameAXT INC·Filed 2002·Granted Nov 18, 2003·121 cites·45 claims
- 0389US12054851B2Low etch pit density, low slip line density, and low strain indium phosphideAXT INC·Filed 2023·Granted Aug 6, 2024·1 cites·9 claims
- 0483US6420736B1Window for gallium nitride light emitting diodeAXT INC·Filed 2000·Granted Jul 16, 2002·38 cites·9 claims
- 0582US11608569B2Low etch pit density, low slip line density, and low strain indium phosphideAXT INC·Filed 2021·Granted Mar 21, 2023·1 cites·17 claims
- 0681US7566641B2Low etch pit density (EPD) semi-insulating GaAs wafersAXT INC·Filed 2007·Granted Jul 28, 2009·8 cites·11 claims
- 0778US12084790B2Low etch pit density 6 inch semi-insulating gallium arsenide wafersAXT INC·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 0878US6495867B1InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphireAXT INC·Filed 2000·Granted Dec 17, 2002·22 cites·4 claims
- 0977US2024426025A1Low etch pit density 6 inch semi-insulating gallium arsenide wafersAXT INC·Filed 2024·Application pending·0 cites
- 1076US6896729B2Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient controlAXT INC·Filed 2002·Granted May 24, 2005·14 cites·27 claims
- 1176US2025230576A1Method and system for vertical gradient freeze 8 inch gallium arsenide substratesAXT INC·Filed 2025·Application pending·0 cites
- 1275US6580096B2Window for light-emitting diodeAXT INC·Filed 2002·Granted Jun 17, 2003·24 cites·4 claims
- 1375US2024384436A1Low etch pit density, low slip line density, and low strain indium phosphideAXT INC·Filed 2024·Application pending·0 cites
- 1474US6643304B1Transparent substrate light emitting diodeAXT INC·Filed 2000·Granted Nov 4, 2003·24 cites·4 claims
- 1568US2022298673A1Method and system for vertical gradient freeze 8 inch gallium arsenide substratesAXT INC·Filed 2022·Application pending·0 cites
- 1665US11680340B2Low etch pit density 6 inch semi-insulating gallium arsenide wafersAXT INC·Filed 2019·Granted Jun 20, 2023·0 cites·14 claims
- 1765US6459098B1Window for light emitting diodeAXT INC·Filed 2000·Granted Oct 1, 2002·13 cites·4 claims
- 1858US8361225B2Low etch pit density (EPD) semi-insulating III-V wafersAXT INC·Filed 2011·Granted Jan 29, 2013·1 cites·2 claims
- 1956US12276044B2Low etch pit density gallium arsenide crystals with boron dopantAXT INC·Filed 2019·Granted Apr 15, 2025·0 cites·11 claims
- 2054US2010001288A1Low Etch Pit Density (EPD) Semi-Insulating GaAs WafersAXT INC·Filed 2009·Application pending·0 cites
- 2146US2009179015A1Laser adjustable depth mark system and methodAXT INC·Filed 2008·Application pending·0 cites
- 2241US2006183329A1Apparatus and method for reducing impurities in a semiconductor materialAXT INC·Filed 2004·Application pending·0 cites
- 2337US2003172870A1Apparatus for growing monocrystalline group II-VI and III-V compoundsAXT INC·Filed 2002·Application pending·0 cites
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