Inventor · disambiguated record
Ashish Baraskar
Also filed as: BARASKAR ASHISH · BARASKAR ASHISH K · BARASKAR ASHISH KUMAR
35 granted patents·4 pending applications·317 citations·filing 2013–2020
97Inventor score
Top patents by PatentIndex Score
39 records- 0199US11322509B2Three-dimensional memory device including a silicon-germanium source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·13 cites·19 claims
- 0299US9812462B1Memory hole size variation in a 3D stacked memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 7, 2017·104 cites·11 claims
- 0398US11721727B2Three-dimensional memory device including a silicon-germanium source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 8, 2023·6 cites·2 claims
- 0498US10923197B2Memory device with compensation for erase speed variations due to blocking oxide layer thinningSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 16, 2021·8 cites·20 claims
- 0598US10115730B1Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·40 cites·18 claims
- 0697US10020314B1Forming memory cell film in stack openingSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 10, 2018·20 cites·17 claims
- 0797US9748266B1Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 29, 2017·21 cites·24 claims
- 0896US11302713B2Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 12, 2022·4 cites·3 claims
- 0996US9779948B1Method of fabricating 3D NANDSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 3, 2017·17 cites·20 claims
- 1095US9673216B1Method of forming memory cell filmSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 6, 2017·13 cites·20 claims
- 1194US10804282B2Three-dimensional memory devices using carbon-doped aluminum oxide backside blocking dielectric layer for etch resistivity enhancement and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 13, 2020·10 cites·13 claims
- 1293US11037640B2Multi-pass programming process for memory device which omits verify test in first program passSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 15, 2021·3 cites·20 claims
- 1392US11101288B2Three-dimensional memory device containing plural work function word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 24, 2021·8 cites·19 claims
- 1492US10741253B1Memory device with compensation for erase speed variations due to blocking oxide layer thinningSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 11, 2020·10 cites·19 claims
- 1591US11398451B2Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory dieSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 26, 2022·2 cites·20 claims
- 1691US10665301B1Memory device with compensation for program speed variations due to block oxide thinningSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·8 cites·10 claims
- 1790US11063063B2Three-dimensional memory device containing plural work function word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 13, 2021·6 cites·15 claims
- 1890US10964402B1Reprogramming memory cells to tighten threshold voltage distributions and improve data retentionSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 30, 2021·3 cites·20 claims
- 1990US10811109B2Multi-pass programming process for memory device which omits verify test in first program passSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 20, 2020·8 cites·16 claims
- 2086US9508795B2Methods of fabricating nanowire structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 29, 2016·5 cites·19 claims
- 2181US11282857B2Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 22, 2022·1 cites·20 claims
- 2279US10497711B2Non-volatile memory with reduced program speed variationSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Dec 3, 2019·2 cites·9 claims
- 2372US10068651B1Channel pre-charge to suppress disturb of select gate transistors during erase in memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Sep 4, 2018·3 cites·19 claims
- 2469US9601428B2Semiconductor fuses with nanowire fuse links and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 21, 2017·1 cites·12 claims
- 2566US11024387B2Memory device with compensation for program speed variations due to block oxide thinningSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
- 2664US10878914B2Memory device with compensation for program speed variations due to block oxide thinningSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 2764US9275861B2Methods of forming group III-V semiconductor materials on group IV substrates and the resulting substrate structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 1, 2016·1 cites·10 claims
- 2856US10332834B2Semiconductor fuses with nanowire fuse links and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 25, 2019·0 cites·5 claims
- 2954US11538828B2Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 27, 2022·0 cites·15 claims
- 3054US11508748B2Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 22, 2022·0 cites·13 claims
- 3154US11495613B2Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 8, 2022·0 cites·18 claims
- 3253US11374020B2Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 28, 2022·0 cites·21 claims
- 3352US2018175054A1Non-volatile memory with reduced variations in gate resistanceSANDISK TECHNOLOGIES LLC·Filed 2018·Application pending·0 cites
- 3450US11778817B2Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 3, 2023·0 cites·20 claims
- 3550US2018033798A1Non-volatile memory with reduced variations in gate resistanceSANDISK TECHNOLOGIES LLC·Filed 2017·Application pending·0 cites
- 3649US2018033794A1Non-Volatile Memory With Reduced Program Speed VariationSANDISK TECHNOLOGIES LLC·Filed 2016·Application pending·0 cites
- 3744US11244734B2Modified verify scheme for programming a memory apparatusSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 8, 2022·0 cites·20 claims
- 3840US2014210011A1Dual Silicide ProcessIBM·Filed 2013·Application pending·0 cites
- 3939US10121552B1Reducing charge loss in data memory cell adjacent to dummy memory cellSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Nov 6, 2018·0 cites·10 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →