Inventor · disambiguated record
Garo Derderian
Also filed as: DERDERIAN GARO · DERDERIAN GARO J · DERDERIAN GARO JACQUES
183 granted patents·35 pending applications·6,659 citations·filing 1996–2019
99Inventor score
Files withMICRON TECHNOLOGY INC166GLOBALFOUNDRIES INC16DERDERIAN GARO J9HILL CHRIS W3ROUND ROCK RES LLC2
Top patents by PatentIndex Score
218 records- 0199US7838084B2Atomic layer deposition method of depositing an oxide on a substrateMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 23, 2010·528 cites·29 claims
- 0299US7589029B2Atomic layer deposition and conversionMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 15, 2009·534 cites·4 claims
- 0399US7431966B2Atomic layer deposition method of depositing an oxide on a substrateMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 7, 2008·538 cites·11 claims
- 0499US6355561B1ALD method to improve surface coverageMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 12, 2002·335 cites·33 claims
- 0598US7387685B2Apparatus and method for depositing materials onto microelectronic workpiecesMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 17, 2008·502 cites·16 claims
- 0698US6890596B2Deposition methodsMICRON TECHNOLOGY INC·Filed 2002·Granted May 10, 2005·418 cites·66 claims
- 0798US6673701B1Atomic layer deposition methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 6, 2004·223 cites·36 claims
- 0897US7271077B2Deposition methods with time spaced and time abutting precursor pulsesMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 18, 2007·82 cites·64 claims
- 0997US6967154B2Enhanced atomic layer depositionMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 22, 2005·106 cites·59 claims
- 1097US6596583B2Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layersMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 22, 2003·96 cites·9 claims
- 1197US6458416B1Deposition methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 1, 2002·107 cites·28 claims
- 1297US6420230B1Capacitor fabrication methods and capacitor constructionsMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 16, 2002·138 cites·31 claims
- 1396US9385124B1Methods of forming reduced thickness spacers in CMOS based integrated circuit productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·19 cites·29 claims
- 1496US8587989B2NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making sameMANNING H MONTGOMERY·Filed 2009·Granted Nov 19, 2013·55 cites·11 claims
- 1596US7390710B2Protection of tunnel dielectric using epitaxial siliconMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 24, 2008·85 cites·19 claims
- 1696US7279396B2Methods of forming trench isolation regions with nitride linerMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 9, 2007·35 cites·20 claims
- 1796US6844260B2Insitu post atomic layer deposition destruction of active speciesMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 18, 2005·104 cites·21 claims
- 1896US6821347B2Apparatus and method for depositing materials onto microelectronic workpiecesMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 23, 2004·94 cites·54 claims
- 1996US6627260B2Deposition methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 30, 2003·77 cites·25 claims
- 2096US6165834AMethod of forming capacitors, method of processing dielectric layers, method of forming a DRAM cellMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 26, 2000·199 cites·30 claims
- 2195US10475791B1Transistor fins with different thickness gate dielectricGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 12, 2019·12 cites·13 claims
- 2295US9396995B1MOL contact metallization scheme for improved yield and device reliabilityGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·15 cites·17 claims
- 2395US7279732B2Enhanced atomic layer depositionMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 9, 2007·58 cites·43 claims
- 2495US6797337B2Method for delivering precursorsMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 28, 2004·60 cites·29 claims
- 2595US6596636B2ALD method to improve surface coverageMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 22, 2003·66 cites·33 claims
- 2695US6559472B2Film compositionMICRON TECHNOLOGY INC·Filed 2002·Granted May 6, 2003·62 cites·20 claims
- 2795US6297527B1Multilayer electrode for ferroelectric and high dielectric constant capacitorsMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 2, 2001·97 cites·54 claims
- 2894US6451692B1Preheating of chemical vapor deposition precursorsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 17, 2002·69 cites·33 claims
- 2994US6188097B1Rough electrode (high surface area) from Ti and TiNMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 13, 2001·90 cites·39 claims
- 3093US9761452B1Devices and methods of forming SADP on SRAM and SAQP on logicGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 12, 2017·7 cites·15 claims
- 3193US7071098B2Methods of fabricating interconnects for semiconductor components including a through hole entirely through the component and forming a metal nitride including separate precursor cyclesMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 4, 2006·20 cites·19 claims
- 3293US6511896B2Method of etching a substantially amorphous TA2O5 comprising layerMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 28, 2003·48 cites·13 claims
- 3392US6900497B2Integrated circuit with a capacitor comprising an electrodeMICRON TECHNOLOGY INC·Filed 2004·Granted May 31, 2005·43 cites·10 claims
- 3492US6861094B2Methods for forming thin layers of materials on micro-device workpiecesMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 1, 2005·43 cites·29 claims
- 3592US6784504B2Methods for forming rough ruthenium-containing layers and structures/methods using sameMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 31, 2004·43 cites·11 claims
- 3692US6746916B2Method for forming a multilayer electrode for a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 8, 2004·48 cites·51 claims
- 3792US6608343B2Rough (high surface area) electrode from Ti and TiN, capacitors and semiconductor devices including sameMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 19, 2003·41 cites·16 claims
- 3892US6429127B1Methods for forming rough ruthenium-containing layers and structures/methods using sameMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 6, 2002·45 cites·38 claims
- 3991US6780766B2Methods of forming regions of differing composition over a substrateMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 24, 2004·46 cites·39 claims
- 4091US6777739B2Multilayer electrode for a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 17, 2004·42 cites·53 claims
- 4191US6753271B2Atomic layer deposition methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 22, 2004·40 cites·49 claims
- 4291US6744093B2Multilayer electrode for a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 1, 2004·42 cites·6 claims
- 4391US6617250B2Methods of depositing a layer comprising tungsten and methods of forming a transistor gate lineMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·38 cites·40 claims
- 4490US8435886B2Method and system for binding halide-based contaminantsDERDERIAN GARO J·Filed 2012·Granted May 7, 2013·6 cites·11 claims
- 4589US10418272B1Methods, apparatus, and system for a semiconductor device comprising gates with short heightsGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 17, 2019·4 cites·14 claims
- 4689US7465650B2Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitryMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 16, 2008·19 cites·22 claims
- 4789US6787185B2Deposition methods for improved delivery of metastable speciesMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 7, 2004·36 cites·30 claims
- 4889US6399982B1Rough (high surface area) electrode from Ti and TiN capacitors and semiconductor devices including sameMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 4, 2002·54 cites·47 claims
- 4988US8216377B2Method and system for binding halide-based contaminantsDERDERIAN GARO J·Filed 2011·Granted Jul 10, 2012·6 cites·16 claims
- 5088US7410898B2Methods of fabricating interconnects for semiconductor componentsMICRON TECHNOLOGY INC·Filed 2007·Granted Aug 12, 2008·12 cites·13 claims
Showing the top 50 of 218 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →