Inventor · disambiguated record
Abdalla Aly Naem
Also filed as: NAEM ABDALLA · NAEM ABDALLA A · NAEM ABDALLA A H · NAEM ABDALLA ALY
42 granted patents·876 citations·filing 1982–2011
98Inventor score
Top patents by PatentIndex Score
42 records- 0193US4683645AProcess of fabricating MOS devices having shallow source and drain junctionsNORTHERN TELECOM LTD·Filed 1985·Granted Aug 4, 1987·157 cites·3 claims
- 0290US5736419AMethod of fabricating a raised source/drain MOSFET using self-aligned POCl3 for doping gate/source/drain regionsNAT SEMICONDUCTOR CORP·Filed 1996·Granted Apr 7, 1998·109 cites·6 claims
- 0388US6479382B1Dual-sided semiconductor chip and method for forming the chip with a conductive path through the chip that connects elements on each side of the chipNAT SEMICONDUCTOR CORP·Filed 2001·Granted Nov 12, 2002·62 cites·5 claims
- 0484US7709956B2Copper-topped interconnect structure that has thin and thick copper traces and method of forming the copper-topped interconnect structureNAT SEMICONDUCTOR CORP·Filed 2008·Granted May 4, 2010·10 cites·8 claims
- 0583US6818938B1MOS transistor and method of forming the transistor with a channel region in a layer of composite materialNAT SEMICONDUCTOR CORP·Filed 2002·Granted Nov 16, 2004·27 cites·13 claims
- 0683US5780349ASelf-aligned MOSFET gate/source/drain salicide formationNAT SEMICONDUCTOR CORP·Filed 1997·Granted Jul 14, 1998·74 cites·7 claims
- 0782US6355544B1Selective high concentration doping of semiconductor material utilizing laser annealingNAT SEMICONDUCTOR CORP·Filed 2000·Granted Mar 12, 2002·28 cites·17 claims
- 0880US4415383AMethod of fabricating semiconductor devices using laser annealingNORTHERN TELECOM LTD·Filed 1982·Granted Nov 15, 1983·47 cites·11 claims
- 0979US8030733B1Copper-compatible fuse targetNAT SEMICONDUCTOR CORP·Filed 2007·Granted Oct 4, 2011·7 cites·18 claims
- 1078US6060392AFabrication of silicides by excimer laser annealing of amorphous siliconNAT SEMICONDUCTOR CORP·Filed 1998·Granted May 9, 2000·43 cites·8 claims
- 1176US4680609AStructure and fabrication of vertically integrated CMOS logic gatesNORTHERN TELECOM LTD·Filed 1984·Granted Jul 14, 1987·27 cites·19 claims
- 1276US4476475AStacked MOS transistorNORTHERN TELECOM LTD·Filed 1982·Granted Oct 9, 1984·43 cites·5 claims
- 1374US6753234B1Method of forming the silicon germanium base of a bipolar transistorNAT SEMICONDUCTOR CORP·Filed 2001·Granted Jun 22, 2004·16 cites·23 claims
- 1472US6649482B1Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistorNAT SEMICONDUCTOR CORP·Filed 2001·Granted Nov 18, 2003·15 cites·30 claims
- 1572US6468871B1Method of forming bipolar transistor salicided emitter using selective laser annealingNAT SEMICONDUCTOR CORP·Filed 2001·Granted Oct 22, 2002·15 cites·5 claims
- 1664US8324097B2Method of forming a copper topped interconnect structure that has thin and thick copper tracesNAEM ABDALLA ALY·Filed 2010·Granted Dec 4, 2012·2 cites·12 claims
- 1764US6589364B1Formation of doped silicon-germanium alloy utilizing laser crystallizationNAT SEMICONDUCTOR CORP·Filed 2000·Granted Jul 8, 2003·9 cites·14 claims
- 1863US7118973B1Method of forming a transistor with a channel region in a layer of composite materialNAT SEMICONDUCTOR CORP·Filed 2004·Granted Oct 10, 2006·9 cites·18 claims
- 1963US6597043B1Narrow high performance MOSFET device designNAT SEMICONDUCTOR CORP·Filed 2001·Granted Jul 22, 2003·9 cites·6 claims
- 2063US6528861B1High performance bipolar transistor architectureNAT SEMICONDUCTOR CORP·Filed 2002·Granted Mar 4, 2003·9 cites·3 claims
- 2161US7964934B1Fuse target and method of forming the fuse target in a copper process flowNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jun 21, 2011·2 cites·18 claims
- 2261US7115973B1Dual-sided semiconductor device with a resistive element that requires little silicon surface areaNAT SEMICONDUCTOR CORP·Filed 2004·Granted Oct 3, 2006·9 cites·20 claims
- 2361US5911114AMethod of simultaneous formation of salicide and local interconnects in an integrated circuit structureNAT SEMICONDUCTOR CORP·Filed 1997·Granted Jun 8, 1999·28 cites·5 claims
- 2458US7847385B1Stacked die structure with an underlying copper-topped dieNAT SEMICONDUCTOR CORP·Filed 2007·Granted Dec 7, 2010·1 cites·19 claims
- 2558US6010951ADual side fabricated semiconductor waferNAT SEMICONDUCTOR CORP·Filed 1998·Granted Jan 4, 2000·26 cites·12 claims
- 2657US5866459AMethod of fabricating a contact structure for an MOS transistor entirely on isolation oxideNAT SEMICONDUCTOR CORP·Filed 1997·Granted Feb 2, 1999·21 cites·3 claims
- 2756US6608349B1Narrow/short high performance MOSFET device designNAT SEMICONDUCTOR CORP·Filed 2001·Granted Aug 19, 2003·7 cites·3 claims
- 2854US6586298B1Method of forming high performance bipolar transistorNAT SEMICONDUCTOR CORP·Filed 2002·Granted Jul 1, 2003·5 cites·3 claims
- 2953US7087979B1Bipolar transistor with an ultra small self-aligned polysilicon emitterNAT SEMICONDUCTOR CORP·Filed 2004·Granted Aug 8, 2006·5 cites·21 claims
- 3051US6406966B1Uniform emitter formation using selective laser recrystallizationNAT SEMICONDUCTOR CORP·Filed 2000·Granted Jun 18, 2002·3 cites·6 claims
- 3150US7098095B1Method of forming a MOS transistor with a layer of silicon germanium carbonNAT SEMICONDUCTOR CORP·Filed 2004·Granted Aug 29, 2006·4 cites·13 claims
- 3250US5966607AMetal salicide process employing ion metal plasma depositionNAT SEMICONDUCTOR CORP·Filed 1997·Granted Oct 12, 1999·17 cites·14 claims
- 3348US6784065B1Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistorNAT SEMICONDUCTOR CORP·Filed 2001·Granted Aug 31, 2004·3 cites·27 claims
- 3448US6399455B1Method of fabricating a bipolar transistor with ultra small polysilicon emitterNAT SEMICONDUCTOR CORP·Filed 2001·Granted Jun 4, 2002·3 cites·1 claims
- 3546US6709936B1Narrow high performance MOSFET device designNAT SEMICONDUCTOR CORP·Filed 2003·Granted Mar 23, 2004·2 cites·2 claims
- 3646US5843834ASelf-aligned POCL3 process flow for submicron microelectronics applications using amorphized polysiliconNAT SEMICONDUCTOR CORP·Filed 1996·Granted Dec 1, 1998·10 cites·3 claims
- 3745US8273608B1Method of forming a copper-compatible fuse targetNAEM ABDALLA ALY·Filed 2011·Granted Sep 25, 2012·0 cites·17 claims
- 3841US6784099B1Dual-sided semiconductor device and method of forming the device with a resistive element that requires little silicon surface areaNAT SEMICONDUCTOR CORP·Filed 2002·Granted Aug 31, 2004·3 cites·15 claims
- 3939US8318563B2Growth of group III nitride-based structures and integration with conventional CMOS processing toolsBAHL SANDEEP R·Filed 2010·Granted Nov 27, 2012·0 cites·17 claims
- 4037US6853017B2Bipolar transistor structure with ultra small polysilicon emitterNAT SEMICONDUCTOR CORP·Filed 2002·Granted Feb 8, 2005·0 cites·2 claims
- 4136US5824596APOCl3 process flow for doping polysilicon without forming oxide pillars or gate oxide shortsNAT SEMICONDUCTOR CORP·Filed 1996·Granted Oct 20, 1998·4 cites·7 claims
- 4231US5807759AMethod of fabricating a contact structure for a raised source/drain MOSFETNAT SEMICONDUCTOR CORP·Filed 1997·Granted Sep 15, 1998·5 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →