Inventor · disambiguated record
Meng-Jin Tsai
Also filed as: TSAI MENG-JIN · TSAI MENG-RU
27 granted patents·3 pending applications·977 citations·filing 1995–2011
97Inventor score
Files withUNITED MICROELECTRONICS CORP24ADVANCED SEMICONDUCTOR ENG1UNITED MICROELECTRICS CORP1UNITED MICROELECTRONICS1WU KUN-LIN1
Top patents by PatentIndex Score
30 records- 0196US5712185AMethod for forming shallow trench isolationUNITED MICROELECTRONICS·Filed 1996·Granted Jan 27, 1998·418 cites·12 claims
- 0288US6077784AChemical-mechanical polishing methodUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 20, 2000·61 cites·14 claims
- 0385US5920779ADifferential gate oxide thickness by nitrogen implantation for mixed mode and embedded VLSI circuitsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 6, 1999·52 cites·9 claims
- 0479US6156640ADamascene process with anti-reflection coatingUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 5, 2000·45 cites·20 claims
- 0578US5610743ALiquid crystal display including concentric shapes and radial spokes which has an improved viewing angleUNITED MICROELECTRONICS CORP·Filed 1995·Granted Mar 11, 1997·58 cites·21 claims
- 0676US7335598B2Chemical-mechanical polishing methodUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 26, 2008·3 cites·33 claims
- 0774US6232197B1Metal-insulator-metal capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 15, 2001·33 cites·21 claims
- 0871US8389410B2Chemical mechanical polishing methodWU KUN-LIN·Filed 2011·Granted Mar 5, 2013·2 cites·22 claims
- 0970US5926729AMethod for forming gate oxide layers of various predefined thicknessesUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 20, 1999·31 cites·20 claims
- 1069US6037201AMethod for manufacturing mixed-mode devicesUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 14, 2000·29 cites·11 claims
- 1167US6403487B1Method of forming separated spacer structures in mixed-mode integrated circuitsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jun 11, 2002·28 cites·26 claims
- 1258US7947603B2Chemical-mechanical polishing methodUNITED MICROELECTRONICS CORP·Filed 2007·Granted May 24, 2011·0 cites·22 claims
- 1358US6281694B1Monitor method for testing probe pinsUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 28, 2001·19 cites·12 claims
- 1458US5981353AMethod of forming a shallow trench isolation regionUNITED MICROELECTRONICS CORP·Filed 1997·Granted Nov 9, 1999·23 cites·13 claims
- 1557US5965464AManufacturing method of double spacer structure for mixed-mode ICUNITED MICROELECTRONICS CORP·Filed 1997·Granted Oct 12, 1999·20 cites·20 claims
- 1656US6140156AFabrication method of isolation structure photodiodeUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 31, 2000·19 cites·4 claims
- 1756US6114220AMethod of fabricating a shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 5, 2000·21 cites·19 claims
- 1856US5981379AMethod of forming viaUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 9, 1999·21 cites·7 claims
- 1955US5913132AMethod of forming a shallow trench isolation regionUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jun 15, 1999·21 cites·3 claims
- 2053US6913993B2Chemical-mechanical polishing methodUNITED MICROELECTRONICS CORP·Filed 2001·Granted Jul 5, 2005·2 cites·20 claims
- 2151US6251748B1Method of manufacturing shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 26, 2001·17 cites·11 claims
- 2250US6268266B1Method for forming enhanced FOX region of low voltage device in high voltage processUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 31, 2001·13 cites·14 claims
- 2350US5500545ADouble switching field effect transistor and method of manufacturing itUNITED MICROELECTRONICS CORP·Filed 1995·Granted Mar 19, 1996·18 cites·17 claims
- 2442US6001735ADual damascene techniqueUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 14, 1999·10 cites·17 claims
- 2541US2006084259A1Manufacturing method of passivation layer on wafer and manufacturing method of bumps on waferADVANCED SEMICONDUCTOR ENG·Filed 2005·Application pending·0 cites
- 2639US2001000034A1Damascene process with anti-reflection coatingFiled 2000·Application pending·0 cites
- 2738US5861329AMethod of fabricating metal-oxide semiconductor (MOS) transistors with reduced level of degradation caused by hot carriersUNITED MICROELECTRICS CORP·Filed 1996·Granted Jan 19, 1999·7 cites·8 claims
- 2835US6190983B1Method for fabricating high-voltage deviceUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 20, 2001·4 cites·14 claims
- 2931US5937291AMethod for forming poly-via connection between load transistor drain and driver transistor gate in SRAMUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 10, 1999·2 cites·15 claims
- 3031US2002096751A1Integrated circuit structure having an adhesive agent and method for manufacturing the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →