Inventor · disambiguated record
Byeong Y. Kim
Also filed as: KIM BYEONG · KIM BYEONG Y · KIM BYEONG YEOL
76 granted patents·17 pending applications·690 citations·filing 1992–2024
99Inventor score
Top patents by PatentIndex Score
93 records- 0198US9472506B2Registration mark formation during sidewall image transfer processIBM·Filed 2015·Granted Oct 18, 2016·26 cites·7 claims
- 0293US6284666B1Method of reducing RIE lag for deep trench silicon etchingIBM·Filed 2000·Granted Sep 4, 2001·87 cites·13 claims
- 0392US8916950B2Shallow trench isolation structure having a nitride plugKIM BYEONG Y·Filed 2011·Granted Dec 23, 2014·13 cites·17 claims
- 0491US8969163B2Forming facet-less epitaxy with self-aligned isolationAQUILINO MICHAEL V·Filed 2012·Granted Mar 3, 2015·17 cites·18 claims
- 0590US8088707B2Supported catalyst with solid sphere structure, method for preparing the same and carbon nanotubes prepared using the sameKIM BYEONG YEOL·Filed 2009·Granted Jan 3, 2012·20 cites·12 claims
- 0690US6727141B1DRAM having offset vertical transistors and methodIBM·Filed 2003·Granted Apr 27, 2004·42 cites·12 claims
- 0789US8237247B2CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectorsKIM BYEONG Y·Filed 2009·Granted Aug 7, 2012·12 cites·15 claims
- 0888US9379116B1Fabrication of a deep trench memory cellGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 28, 2016·5 cites·20 claims
- 0988US9039886B2Method of transferring grapheneGONG KUANPING·Filed 2012·Granted May 26, 2015·20 cites·15 claims
- 1087US9859224B2Registration mark formation during sidewall image transfer processIBM·Filed 2016·Granted Jan 2, 2018·3 cites·12 claims
- 1187US9093275B2Multi-height multi-composition semiconductor finsIBM·Filed 2013·Granted Jul 28, 2015·6 cites·15 claims
- 1286US7737502B2Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI sructure with elevated source/drainIBM·Filed 2006·Granted Jun 15, 2010·12 cites·10 claims
- 1384US6746933B1Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2001·Granted Jun 8, 2004·35 cites·12 claims
- 1483US7939876B2Metallized conductive strap spacer for SOI deep trench capacitorIBM·Filed 2008·Granted May 10, 2011·9 cites·9 claims
- 1582US6373086B1Notched collar isolation for suppression of vertical parasitic MOSFET and the method of preparing the sameIBM·Filed 2000·Granted Apr 16, 2002·30 cites·9 claims
- 1681US9346942B2Thermoplastic resin composition and molded article including the sameSAMSUNG SDI CO LTD·Filed 2014·Granted May 24, 2016·3 cites·12 claims
- 1779US8658486B2Forming facet-less epitaxy with a cut maskAQUILINO MICHAEL VINCENT·Filed 2012·Granted Feb 25, 2014·7 cites·15 claims
- 1878US8227311B2Method of forming enhanced capacitance trench capacitorCHENG KANGGUO·Filed 2010·Granted Jul 24, 2012·4 cites·15 claims
- 1978US8105892B2Thermal dual gate oxide device integrationKIM BYEONG Y·Filed 2009·Granted Jan 31, 2012·7 cites·20 claims
- 2078US7730794B2Method for classifying passengersHYUNDAI MOBIS CO LTD·Filed 2008·Granted Jun 8, 2010·11 cites·9 claims
- 2178US5360753AManufacturing method for a semiconductor isolation regionSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Nov 1, 1994·65 cites·19 claims
- 2277US9997348B2Wafer stress control and topography compensationIBM·Filed 2016·Granted Jun 12, 2018·2 cites·20 claims
- 2377US8188528B2Structure and method to form EDRAM on SOI substratePEI CHENGWEN·Filed 2009·Granted May 29, 2012·5 cites·11 claims
- 2475US7494918B2Semiconductor structures including multiple crystallographic orientations and methods for fabrication thereofIBM·Filed 2006·Granted Feb 24, 2009·6 cites·7 claims
- 2575US7037794B2Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drainIBM·Filed 2004·Granted May 2, 2006·18 cites·9 claims
- 2674US8629017B2Structure and method to form EDRAM on SOI substratePEI CHENGWEN·Filed 2012·Granted Jan 14, 2014·3 cites·20 claims
- 2774US7595232B2CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectorsIBM·Filed 2006·Granted Sep 29, 2009·3 cites·11 claims
- 2873US8128844B2Electroconductive thermoplastic resin composition and plastic article including the sameKIM BYEONG YEOL·Filed 2009·Granted Mar 6, 2012·6 cites·14 claims
- 2973US6404000B1Pedestal collar structure for higher charge retention time in trench-type DRAM cellsIBM·Filed 2000·Granted Jun 11, 2002·17 cites·19 claims
- 3072US7358172B2Poly filled substrate contact on SOI structureIBM·Filed 2006·Granted Apr 15, 2008·4 cites·18 claims
- 3171US7762149B2Passenger discriminating apparatus employing two load sensorsHYUNDAI MOBIS CO LTD·Filed 2008·Granted Jul 27, 2010·7 cites·11 claims
- 3269US8492821B2Enhanced capacitance trench capacitorCHENG KANGGUO·Filed 2012·Granted Jul 23, 2013·2 cites·12 claims
- 3369US7393738B1Subground rule STI fill for hot structureIBM·Filed 2007·Granted Jul 1, 2008·4 cites·18 claims
- 3469US6184107B1Capacitor trench-top dielectric for self-aligned device isolationIBM·Filed 1999·Granted Feb 6, 2001·37 cites·7 claims
- 3566US9406683B2Wet bottling process for small diameter deep trench capacitorsIBM·Filed 2014·Granted Aug 2, 2016·1 cites·20 claims
- 3666US8053838B2Structures, fabrication methods, design structures for strained fin field effect transistors (FinFets)IBM·Filed 2008·Granted Nov 8, 2011·3 cites·20 claims
- 3765US9607993B1Capacitor-transistor strap connections for a memory cellGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 28, 2017·1 cites·19 claims
- 3865US8679938B2Shallow trench isolation for device including deep trench capacitorsFANG SUNFEI·Filed 2012·Granted Mar 25, 2014·2 cites·20 claims
- 3963US10242952B2Registration mark formation during sidewall image transfer processIBM·Filed 2018·Granted Mar 26, 2019·0 cites·14 claims
- 4063US6960514B2Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2004·Granted Nov 1, 2005·9 cites·12 claims
- 4162US7879672B2eDRAM memory cell structure and method of fabricatingIBM·Filed 2009·Granted Feb 1, 2011·2 cites·8 claims
- 4262US6893938B2STI formation for vertical and planar transistorsIBM·Filed 2003·Granted May 17, 2005·9 cites·48 claims
- 4362US6656817B2Method of filling isolation trenches in a substrateIBM·Filed 2002·Granted Dec 2, 2003·10 cites·20 claims
- 4462US6440794B1Method for forming an array of DRAM cells by employing a self-aligned adjacent node isolation techniqueIBM·Filed 1999·Granted Aug 27, 2002·26 cites·14 claims
- 4561US10043760B2Registration mark formation during sidewall image transfer processIBM·Filed 2017·Granted Aug 7, 2018·0 cites·9 claims
- 4661US8927642B2Thermoplastic resin composition with anti-dripping propertiesCHEIL IND INC·Filed 2013·Granted Jan 6, 2015·0 cites·10 claims
- 4761US8426268B2Embedded DRAM memory cell with additional patterning layer for improved strap formationCHENG KANGGUO·Filed 2010·Granted Apr 23, 2013·1 cites·8 claims
- 4861US8003488B2Shallow trench isolation structure compatible with SOI embedded DRAMIBM·Filed 2007·Granted Aug 23, 2011·2 cites·4 claims
- 4961US6143599AMethod for manufacturing memory cell with trench capacitorINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Nov 7, 2000·18 cites·6 claims
- 5060US2025104696A1Method and apparatus for speech recognition using ai modelsHYUNDAI MOTOR CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 93 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →