Inventor · disambiguated record
David N. Wang
Also filed as: WANG DAVID N · WANG DAVID N K · WANG DAVID NIN-KOU
44 granted patents·10,739 citations·filing 1978–1998
99Inventor score
Top patents by PatentIndex Score
44 records- 0199US5362526APlasma-enhanced CVD process using TEOS for depositing silicon oxideAPPLIED MATERIALS INC·Filed 1991·Granted Nov 8, 1994·484 cites·15 claims
- 0299US5000113AThermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized processAPPLIED MATERIALS INC·Filed 1986·Granted Mar 19, 1991·1.1k cites·19 claims
- 0399US4962063AMultistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositingAPPLIED MATERIALS INC·Filed 1989·Granted Oct 9, 1990·455 cites·21 claims
- 0499US4892753AProcess for PECVD of silicon oxide using TEOS decompositionAPPLIED MATERIALS INC·Filed 1988·Granted Jan 9, 1990·503 cites·12 claims
- 0599US4872947ACVD of silicon oxide using TEOS decomposition and in-situ planarization processAPPLIED MATERIALS INC·Filed 1988·Granted Oct 10, 1989·522 cites·14 claims
- 0699US4854263AInlet manifold and methods for increasing gas dissociation and for PECVD of dielectric filmsAPPLIED MATERIALS INC·Filed 1987·Granted Aug 8, 1989·791 cites·11 claims
- 0799US4668365AApparatus and method for magnetron-enhanced plasma-assisted chemical vapor depositionAPPLIED MATERIALS INC·Filed 1984·Granted May 26, 1987·229 cites·22 claims
- 0898US6167834B1Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized processAPPLIED MATERIALS INC·Filed 1992·Granted Jan 2, 2001·367 cites·5 claims
- 0998US5882165AMultiple chamber integrated process systemAPPLIED MATERIALS INC·Filed 1997·Granted Mar 16, 1999·789 cites·8 claims
- 1098US5213650AApparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of waferAPPLIED MATERIALS INC·Filed 1991·Granted May 25, 1993·530 cites·9 claims
- 1198US5028565AProcess for CVD deposition of tungsten layer on semiconductor waferAPPLIED MATERIALS INC·Filed 1989·Granted Jul 2, 1991·387 cites·18 claims
- 1298US4960488AReactor chamber self-cleaning processAPPLIED MATERIALS INC·Filed 1989·Granted Oct 2, 1990·529 cites·16 claims
- 1398US4951601AMulti-chamber integrated process systemAPPLIED MATERIALS INC·Filed 1989·Granted Aug 28, 1990·1.3k cites·22 claims
- 1497US4842683AMagnetic field-enhanced plasma etch reactorAPPLIED MATERIALS INC·Filed 1988·Granted Jun 27, 1989·410 cites·16 claims
- 1596US5300460AUHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafersAPPLIED MATERIALS INC·Filed 1993·Granted Apr 5, 1994·109 cites·26 claims
- 1696US5292393AMultichamber integrated process systemAPPLIED MATERIALS INC·Filed 1991·Granted Mar 8, 1994·386 cites·11 claims
- 1796US5210466AVHF/UHF reactor systemAPPLIED MATERIALS INC·Filed 1992·Granted May 11, 1993·124 cites·17 claims
- 1896US4310380APlasma etching of siliconBELL TELEPHONE LABOR INC·Filed 1980·Granted Jan 12, 1982·136 cites·6 claims
- 1994US5354715AThermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized processAPPLIED MATERIALS INC·Filed 1992·Granted Oct 11, 1994·132 cites·16 claims
- 2094US5314845ATwo step process for forming void-free oxide layer over stepped surface of semiconductor waferAPPLIED MATERIALS INC·Filed 1990·Granted May 24, 1994·122 cites·24 claims
- 2193US5215619AMagnetic field-enhanced plasma etch reactorAPPLIED MATERIALS INC·Filed 1991·Granted Jun 1, 1993·194 cites·25 claims
- 2293US5043299AProcess for selective deposition of tungsten on semiconductor waferAPPLIED MATERIALS INC·Filed 1989·Granted Aug 27, 1991·121 cites·15 claims
- 2390US5755886AApparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processingAPPLIED MATERIALS INC·Filed 1995·Granted May 26, 1998·91 cites·28 claims
- 2490US4256534ADevice fabrication by plasma etchingBELL TELEPHONE LABOR INC·Filed 1978·Granted Mar 17, 1981·57 cites·11 claims
- 2589US5166101AMethod for forming a boron phosphorus silicate glass composite layer on a semiconductor waferAPPLIED MATERIALS INC·Filed 1991·Granted Nov 24, 1992·73 cites·17 claims
- 2688USRE36623EProcess for PECVD of silicon oxide using TEOS decompositionAPPLIED MATERIALS INC·Filed 1996·Granted Mar 21, 2000·79 cites·13 claims
- 2788US6040022APECVD of compounds of silicon from silane and nitrogenAPPLIED MATERIALS INC·Filed 1998·Granted Mar 21, 2000·57 cites·5 claims
- 2888US4376672AMaterials and methods for plasma etching of oxides and nitrides of siliconAPPLIED MATERIALS INC·Filed 1981·Granted Mar 15, 1983·67 cites·12 claims
- 2986US5871811AMethod for protecting against deposition on a selected region of a substrateAPPLIED MATERIALS INC·Filed 1995·Granted Feb 16, 1999·69 cites·45 claims
- 3084US4412885AMaterials and methods for plasma etching of aluminum and aluminum alloysAPPLIED MATERIALS INC·Filed 1982·Granted Nov 1, 1983·54 cites·17 claims
- 3182US4171489ARadiation mask structureBELL TELEPHONE LABOR INC·Filed 1978·Granted Oct 16, 1979·27 cites·18 claims
- 3281US5354387ABoron phosphorus silicate glass composite layer on semiconductor waferAPPLIED MATERIALS INC·Filed 1992·Granted Oct 11, 1994·44 cites·19 claims
- 3381US5075256AProcess for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of waferAPPLIED MATERIALS INC·Filed 1989·Granted Dec 24, 1991·56 cites·18 claims
- 3480US6020270ABomine and iodine etch process for silicon and silicidesAPPLIED MATERIALS INC·Filed 1998·Granted Feb 1, 2000·47 cites·10 claims
- 3579US5204288AMethod for planarizing an integrated circuit structure using low melting inorganic materialAPPLIED MATERIALS INC·Filed 1992·Granted Apr 20, 1993·67 cites·24 claims
- 3677US5773100APECVD of silicon nitride filmsAPPLIED MATERIALS INC·Filed 1996·Granted Jun 30, 1998·32 cites·9 claims
- 3774US4613400AIn-situ photoresist capping process for plasma etchingAPPLIED MATERIALS INC·Filed 1985·Granted Sep 23, 1986·43 cites·20 claims
- 3868US5874362ABromine and iodine etch process for silicon and silicidesAPPLIED MATERIALS INC·Filed 1996·Granted Feb 23, 1999·28 cites·10 claims
- 3968US4383885AReactive sputter etching of polysilicon utilizing a chlorine etch gasBELL TELEPHONE LABOR INC·Filed 1981·Granted May 17, 1983·29 cites·9 claims
- 4067US5244841AMethod for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositingAPPLIED MATERIALS INC·Filed 1991·Granted Sep 14, 1993·39 cites·9 claims
- 4164US4333793AHigh-selectivity plasma-assisted etching of resist-masked layerBELL TELEPHONE LABOR INC·Filed 1980·Granted Jun 8, 1982·25 cites·9 claims
- 4259US5219485AMaterials and methods for etching silicides, polycrystalline silicon and polycidesAPPLIED MATERIALS INC·Filed 1991·Granted Jun 15, 1993·32 cites·9 claims
- 4352US5112435AMaterials and methods for etching silicides, polycrystalline silicon and polycidesAPPLIED MATERIALS INC·Filed 1989·Granted May 12, 1992·22 cites·12 claims
- 4437US5112776AMethod for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositingAPPLIED MATERIALS INC·Filed 1991·Granted May 12, 1992·10 cites·34 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →