Inventor · disambiguated record
Donald L. Plumton
Also filed as: PLUMTON DONALD · PLUMTON DONALD L · PLUMTON DONALD LYNN
36 granted patents·1 pending application·2,117 citations·filing 1986–2016
98Inventor score
Files withTEXAS INSTRUMENTS INC31ATON THOMAS J2ASHBURN STANTON PETREE1MORRIS FRANCIS J1TEXAS INSTURMENTS INC1
Top patents by PatentIndex Score
37 records- 0195US6097046AVertical field effect transistor and diodeTEXAS INSTRUMENTS INC·Filed 1993·Granted Aug 1, 2000·246 cites·3 claims
- 0295US5909110AIntegrated voltage regulator circuit with vertical transistorTEXAS INSTURMENTS INC·Filed 1997·Granted Jun 1, 1999·87 cites·20 claims
- 0394US5610085AMethod of making a vertical FET using epitaxial overgrowthTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 11, 1997·145 cites·6 claims
- 0494US5068756AIntegrated circuit composed of group III-V compound field effect and bipolar semiconductorsTEXAS INSTRUMENTS INC·Filed 1990·Granted Nov 26, 1991·110 cites·11 claims
- 0593US5712189AEpitaxial overgrowth methodTEXAS INSTRUMENTS INC·Filed 1993·Granted Jan 27, 1998·116 cites·16 claims
- 0692US5889298AVertical JFET field effect transistorTEXAS INSTRUMENTS INC·Filed 1993·Granted Mar 30, 1999·130 cites·15 claims
- 0792US5407842AEnhanced performance bipolar transistor processTEXAS INTRUMENTS INC·Filed 1994·Granted Apr 18, 1995·88 cites·19 claims
- 0891US5910665ALow capacitance power VFET method and deviceTEXAS INSTRUMENTS INC·Filed 1996·Granted Jun 8, 1999·98 cites·19 claims
- 0991US5624860AVertical field effect transistor and methodTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 29, 1997·102 cites·4 claims
- 1091US5223449AMethod of making an integrated circuit composed of group III-V compound field effect and bipolar semiconductorsMORRIS FRANCIS J·Filed 1991·Granted Jun 29, 1993·107 cites·16 claims
- 1190US5747842AEpitaxial overgrowth method and devicesTEXAS INSTRUMENTS INC·Filed 1995·Granted May 5, 1998·98 cites·5 claims
- 1290US5468661AMethod of making power VFET deviceTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 21, 1995·88 cites·9 claims
- 1390US5369042AEnhanced performance bipolar transistor processTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 29, 1994·74 cites·19 claims
- 1490US5342795AMethod of fabricating power VFET gate-refillTEXAS INSTRUMENTS INC·Filed 1993·Granted Aug 30, 1994·81 cites·13 claims
- 1589US5554561AEpitaxial overgrowth methodTEXAS INSTRUMENTS INC·Filed 1993·Granted Sep 10, 1996·103 cites·11 claims
- 1688US6229197B1Epitaxial overgrowth method and devicesTEXAS INSTRUMENTS INC·Filed 1995·Granted May 8, 2001·98 cites·2 claims
- 1782US5391515ACapped annealTEXAS INSTRUMENTS INC·Filed 1992·Granted Feb 21, 1995·63 cites·7 claims
- 1881US5243207AMethod to integrate HBTs and FETsTEXAS INSTRUMENTS INC·Filed 1992·Granted Sep 7, 1993·68 cites·10 claims
- 1974US5077231AMethod to integrate HBTs and FETsTEXAS INSTRUMENTS INC·Filed 1991·Granted Dec 31, 1991·50 cites·10 claims
- 2068US8173544B2Integrated circuit having interleaved gridded features, mask set and method for printingATON THOMAS J·Filed 2008·Granted May 8, 2012·2 cites·7 claims
- 2167US5548141ABipolar transistor having a self emitter contact alignedTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 20, 1996·23 cites·10 claims
- 2265US4743569ATwo step rapid thermal anneal of implanted compound semiconductorTEXAS INSTRUMENTS INC·Filed 1987·Granted May 10, 1988·31 cites·3 claims
- 2363US4843033AMethod for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant sourceTEXAS INSTRUMENTS INC·Filed 1987·Granted Jun 27, 1989·28 cites·17 claims
- 2455US5659188ACapped annealTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 19, 1997·15 cites·8 claims
- 2553US5744375ACapped annealTEXAS INSTRUMENTS INC·Filed 1996·Granted Apr 28, 1998·14 cites·8 claims
- 2650US8580685B2Integrated circuit having interleaved gridded features, mask set, and method for printingATON THOMAS J·Filed 2012·Granted Nov 12, 2013·0 cites·17 claims
- 2748US4868633ASelective epitaxy devices and methodTEXAS INSTRUMENTS INC·Filed 1986·Granted Sep 19, 1989·16 cites·21 claims
- 2845US5436181AMethod of self aligning an emitter contact in a heterojunction bipolar transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Jul 25, 1995·8 cites·15 claims
- 2941US5013682AMethod for selective epitaxy using a WSI maskTEXAS INSTRUMENTS INC·Filed 1989·Granted May 7, 1991·10 cites·23 claims
- 3040US9378848B2Methods and devices for determining logical to physical mapping on an integrated circuitASHBURN STANTON PETREE·Filed 2012·Granted Jun 28, 2016·0 cites·13 claims
- 3135US5420052AMethod of fabricating a semiplanar heterojunction bipolar transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted May 30, 1995·4 cites·17 claims
- 3234US5474652AMethod of dry etching InAlAs and InGaAs lattice matched to InPTEXAS INSTRUMENTS INC·Filed 1994·Granted Dec 12, 1995·5 cites·19 claims
- 3334US2016245861A1Methods and devices for determining logical to physical mapping on an integrated circuitTEXAS INSTRUMENTS INC·Filed 2016·Application pending·0 cites
- 3433US5362657ALateral complementary heterojunction bipolar transistor and processing procedureTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 8, 1994·6 cites·16 claims
- 3532US5616213AMethod of dry etching InAlAs and InGaAs lattice matched to InPTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 1, 1997·2 cites·10 claims
- 3631US5698460AMethod of self-aligning an emitter contact in a planar heterojunction bipolar transistor and apparatus thereofTEXAS INSTRUMENTS INC·Filed 1995·Granted Dec 16, 1997·1 cites·11 claims
- 3730US6271078B1Simplifying conductive plate/via isolationTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 7, 2001·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →