Inventor · disambiguated record
Joel P. De Souza
Also filed as: DE SOUZA JOEL · DE SOUZA JOEL P · DE SOUZA JOEL PEREIRA
133 granted patents·24 pending applications·515 citations·filing 1991–2023
99Inventor score
Top patents by PatentIndex Score
157 records- 0198US9553056B1Semiconductor chip having tampering featureIBM·Filed 2015·Granted Jan 24, 2017·31 cites·7 claims
- 0297US10644356B2High charge rate, large capacity, solid-state batteryIBM·Filed 2017·Granted May 5, 2020·8 cites·13 claims
- 0396US10777842B2Rechargeable lithium-ion battery with an anode structure containing a porous regionIBM·Filed 2018·Granted Sep 15, 2020·8 cites·21 claims
- 0496US10581109B2Fabrication method of all solid-state thin-film batteryIBM·Filed 2017·Granted Mar 3, 2020·8 cites·11 claims
- 0596US9401397B1Reduction of defect induced leakage in III-V semiconductor devicesIBM·Filed 2015·Granted Jul 26, 2016·11 cites·20 claims
- 0696US9385023B1Method and structure to make fins with different fin heights and no topographyGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·14 cites·13 claims
- 0794US9536945B1MOSFET with ultra low drain leakageIBM·Filed 2015·Granted Jan 3, 2017·7 cites·14 claims
- 0894US9453190B1Surface treatment of textured siliconIBM·Filed 2015·Granted Sep 27, 2016·12 cites·19 claims
- 0993US10396182B2Silicon germanium-on-insulator formation by thermal mixingIBM·Filed 2016·Granted Aug 27, 2019·6 cites·11 claims
- 1093US10079341B1Three-terminal non-volatile multi-state memory for cognitive computing applicationsIBM·Filed 2017·Granted Sep 18, 2018·13 cites·18 claims
- 1192US10164014B2MOSFET with ultra low drain leakageIBM·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
- 1292US10032730B2Semiconductor chip having tampering featureIBM·Filed 2016·Granted Jul 24, 2018·6 cites·18 claims
- 1392US7084050B2Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion annealIBM·Filed 2005·Granted Aug 1, 2006·14 cites·33 claims
- 1492US5930643ADefect induced buried oxide (DIBOX) for throughput SOIIBM·Filed 1997·Granted Jul 27, 1999·107 cites·34 claims
- 1591US10153159B1Source and drain formation using self-aligned processesIBM·Filed 2017·Granted Dec 11, 2018·5 cites·7 claims
- 1690US10192161B1Lithium-drift based resistive processing unit for accelerating machine learning trainingIBM·Filed 2017·Granted Jan 29, 2019·10 cites·20 claims
- 1790US9768254B2Leakage-free implantation-free ETSOI transistorsIBM·Filed 2015·Granted Sep 19, 2017·4 cites·12 claims
- 1889US10833357B2Battery structure with an anode structure containing a porous region and method of operationIBM·Filed 2018·Granted Nov 10, 2020·3 cites·37 claims
- 1989US9984949B1Surface passivation having reduced interface defect densityIBM·Filed 2017·Granted May 29, 2018·4 cites·16 claims
- 2089US7897444B2Strained semiconductor-on-insulator (sSOI) by a simox methodIBM·Filed 2009·Granted Mar 1, 2011·15 cites·7 claims
- 2188US9583562B2Reduction of defect induced leakage in III-V semiconductor devicesIBM·Filed 2015·Granted Feb 28, 2017·4 cites·7 claims
- 2288US7342293B2Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming sameIBM·Filed 2005·Granted Mar 11, 2008·15 cites·20 claims
- 2388US6861158B2Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion annealIBM·Filed 2003·Granted Mar 1, 2005·25 cites·13 claims
- 2487US11233288B2Silicon substrate containing integrated porous silicon electrodes for energy storage devicesIBM·Filed 2018·Granted Jan 25, 2022·2 cites·20 claims
- 2587US8598006B2Strain preserving ion implantation methodsDE SOUZA JOEL P·Filed 2010·Granted Dec 3, 2013·9 cites·16 claims
- 2687US7365399B2Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing costIBM·Filed 2006·Granted Apr 29, 2008·12 cites·6 claims
- 2786US7785939B2Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layersIBM·Filed 2006·Granted Aug 31, 2010·9 cites·21 claims
- 2885US10381479B2Interface charge reduction for SiGe surfaceIBM·Filed 2017·Granted Aug 13, 2019·3 cites·20 claims
- 2985US9620592B2Doped zinc oxide and n-doping to reduce junction leakageIBM·Filed 2015·Granted Apr 11, 2017·4 cites·20 claims
- 3085US9443957B1Self-aligned source and drain regions for semiconductor devicesIBM·Filed 2015·Granted Sep 13, 2016·3 cites·17 claims
- 3184US10658702B2High-performance thin-film battery with an interfacial layerIBM·Filed 2017·Granted May 19, 2020·1 cites·9 claims
- 3284US10559463B2Multi-state device based on ion trappingIBM·Filed 2017·Granted Feb 11, 2020·1 cites·13 claims
- 3384US10290719B1Indium gallium arsenide metal oxide semiconductor field effect transistor having a low contact resistance to metal electrodeIBM·Filed 2017·Granted May 14, 2019·2 cites·20 claims
- 3484US8617938B2Device and method for boron diffusion in semiconductorsDE SOUZA JOEL P·Filed 2011·Granted Dec 31, 2013·6 cites·25 claims
- 3584US8415772B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 9, 2013·5 cites·12 claims
- 3683US11335899B2Lithium ion energy storage device containing a vapor deposited iodine interfacial layerIBM·Filed 2019·Granted May 17, 2022·1 cites·11 claims
- 3783US9786756B2Self-aligned source and drain regions for semiconductor devicesIBM·Filed 2016·Granted Oct 10, 2017·2 cites·5 claims
- 3882US10833356B2Kinetically fast charging lithium-ion batteryIBM·Filed 2018·Granted Nov 10, 2020·1 cites·22 claims
- 3981US10833311B2Method of making an anode structure containing a porous regionIBM·Filed 2018·Granted Nov 10, 2020·1 cites·22 claims
- 4081US10438858B2Low-cost SOI FinFET technologyIBM·Filed 2017·Granted Oct 8, 2019·2 cites·18 claims
- 4180US9590077B2Local SOI fins with multiple heightsIBM·Filed 2015·Granted Mar 7, 2017·3 cites·12 claims
- 4280US7833884B2Strained semiconductor-on-insulator by Si:C combined with porous processIBM·Filed 2007·Granted Nov 16, 2010·6 cites·24 claims
- 4379US11201212B2MOSFET with ultra low drain leakageIBM·Filed 2018·Granted Dec 14, 2021·1 cites·19 claims
- 4479US7172930B2Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layerIBM·Filed 2004·Granted Feb 6, 2007·20 cites·30 claims
- 4578US10032870B2Low defect III-V semiconductor template on porous siliconGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 24, 2018·2 cites·12 claims
- 4678US9899274B2Low-cost SOI FinFET technologyIBM·Filed 2015·Granted Feb 20, 2018·2 cites·15 claims
- 4778US8138061B2Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxideDE SOUZA JOEL P·Filed 2005·Granted Mar 20, 2012·6 cites·9 claims
- 4877US12225833B2Oxide-based resistive memory having a plasma-exposed bottom electrodeIBM·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 4977US10944128B2Anode structure for solid-state lithium-based thin-film batteryIBM·Filed 2017·Granted Mar 9, 2021·1 cites·11 claims
- 5077US9653570B2Junction interlayer dielectric for reducing leakage current in semiconductor devicesIBM·Filed 2015·Granted May 16, 2017·2 cites·17 claims
Showing the top 50 of 157 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →