Inventor · disambiguated record
Gaosheng Zhang
Also filed as: ZHANG GAOSHENG
6 granted patents·3 pending applications·6 citations·filing 2007–2025
71Inventor score
Top patents by PatentIndex Score
9 records- 0186US2025349792A1Method of forming semiconductor structureYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0281US10811380B2Semiconductor structure and forming method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 20, 2020·3 cites·16 claims
- 0378US10818631B2Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 27, 2020·3 cites·16 claims
- 0471US12394751B2Method of forming semiconductor structureYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 19, 2025·0 cites·19 claims
- 0569US2022216178A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 0662US11577215B2Method for producing absorbentUNIV GUANGZHOU·Filed 2021·Granted Feb 14, 2023·0 cites·5 claims
- 0756US2020006285A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
- 0845US12334399B2Structures and methods for fabricating staircase regions of a three-dimensional NAND memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·18 claims
- 0934US8207087B2Method for making ferric and manganese binary oxide based adsorbentQU JIUHUI·Filed 2007·Granted Jun 26, 2012·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →