Semiconductor structure and method of forming the same

Abstract

The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a first substrate; and   a first bonding layer located on a surface of the first substrate, wherein a material of the first bonding layer is a dielectric material containing element carbon (C), and C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%.   
     
     
         2 . The semiconductor structure according to  claim 1 , wherein C atomic concentration distributes uniformly in the first bonding layer. 
     
     
         3 . The semiconductor structure according to  claim 1 , wherein C atomic concentration in the first bonding layer increases gradually with increasing thickness of the first bonding layer. 
     
     
         4 . The semiconductor structure according to  claim 1 , wherein the thickness of the surface layer ranges from 20 angstroms (Å) to 50 angstroms. 
     
     
         5 . The semiconductor structure according to  claim 1 , further comprising:
 a second substrate, wherein a second bonding layer is formed on a surface of the second substrate, and the second bonding layer is bonded to and fixed on the first bonding layer with a surface of the second bonding layer facing a surface of the first bonding layer.   
     
     
         6 . The semiconductor structure according to  claim 5 , wherein a material of the second bonding layer is a dielectric material containing element C, and C atomic concentration of a surface layer of the second bonding layer away from the second substrate is higher than or equal to 35%. 
     
     
         7 . The semiconductor structure according to  claim 5 , wherein the material of the second bonding layer is identical to the material of the first bonding layer. 
     
     
         8 . The semiconductor structure according to  claim 5 , further comprising:
 a first bonding pad penetrating the first bonding layer; and   a second bonding pad penetrating the second bonding layer, wherein the first bonding pad and the second bonding pad are bonded to each other correspondingly.   
     
     
         9 . A semiconductor structure, comprising:
 a first substrate; and   a bonding stack layer located on a surface of the first substrate, wherein the bonding stack layer comprises bonding layers bonded to one another, and a material of the bonding stack layer is a dielectric material containing silicon (Si), nitrogen (N), carbon (C), and oxygen (O).   
     
     
         10 . The semiconductor structure according to  claim 9 , wherein the bonding stack layer is formed by oxidizing two bonding layers having CH 3  bonds and bonding the two bonding layers after the oxidizing. 
     
     
         11 . The semiconductor structure according to  claim 9 , wherein C atomic concentration of surface layers in the bonding layers adjacent to a bonding surface is higher than or equal to 35%. 
     
     
         12 . The semiconductor structure according to  claim 9 , further comprising:
 a second substrate located on a side of the bonding stack layer away from the first substrate.   
     
     
         13 . The semiconductor structure according to  claim 9 , further comprising:
 bonding pads penetrating the bonding layers, wherein the bonding pads in two of the bonding layer are bonded to each other correspondingly.   
     
     
         14 . A method of forming a semiconductor structure, comprising:
 providing a first substrate;   forming a first bonding layer on a surface of the first substrate, wherein a material of the first bonding layer is a dielectric material containing element carbon (C) and a CH 3  bond;   providing a second substrate;   forming a second bonding layer on a surface of the second substrate, wherein a material of the second bonding layer is a dielectric material containing element C and a CH 3  bond;   oxidizing a surface layer of the first bonding layer and a surface layer of the second bonding layer, wherein the CH 3  bonds are oxidized to be OH bonds; and   bonding the first bonding layer and the second bonding layer to each other correspondingly.   
     
     
         15 . The method of forming the semiconductor structure according to  claim 14 , wherein C atomic concentration within the surface layer of the first bonding layer and C atomic concentration within the surface layer of the second bonding layer are higher than or equal to 35%. 
     
     
         16 . The method of forming the semiconductor structure according to  claim 14 , wherein the first bonding layer is formed by a plasma-enhanced chemical vapor deposition process. 
     
     
         17 . The method of forming the semiconductor structure according to  claim 14 , wherein C atomic concentration in the first bonding layer distributes uniformly in the first bonding layer or increases gradually with increasing thickness of the first bonding layer, and C atomic concentration in the second bonding layer distributes uniformly in the second bonding layer or increases gradually with increasing thickness of the second bonding layer. 
     
     
         18 . The method of forming the semiconductor structure according to  claim 14 , wherein the thickness of the surface layer of the first bonding layer and the thickness of the surface layer of the second bonding layer range from 10 angstroms (Å) to 50 angstroms.