Inventor · disambiguated record
Amol Joshi
Also filed as: JOSHI AMOL · JOSHI AMOL R · JOSHI AMOL RAMESH
27 granted patents·19 pending applications·98 citations·filing 2005–2022
95Inventor score
Files withSPANSION LLC15INTERMOLECULAR INC11CYPRESS SEMICONDUCTOR CORP3GLOBALFOUNDRIES INC3Intermolecular2
Top patents by PatentIndex Score
46 records- 0193US9105497B2Methods of forming gate structures for transistor devices for CMOS applicationsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·19 cites·24 claims
- 0292US9362283B2Gate structures for transistor devices for CMOS applications and productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·9 cites·20 claims
- 0390US7368347B2Dual bit flash memory devices and methods for fabricating the sameSPANSION LLC·Filed 2006·Granted May 6, 2008·18 cites·15 claims
- 0489US7432156B1Memory device and methods for its fabricationSPANSION LLC·Filed 2006·Granted Oct 7, 2008·15 cites·15 claims
- 0586US7915123B1Dual charge storage node memory device and methods for fabricating such deviceSPANSION LLC·Filed 2006·Granted Mar 29, 2011·12 cites·18 claims
- 0677US8735302B2High productivity combinatorial oxide terracing and PVD/ALD metal deposition combined with lithography for gate work function extractionJOSHI AMOL·Filed 2012·Granted May 27, 2014·4 cites·20 claims
- 0773US8143661B2Memory cell system with charge trapFANG SHENQING·Filed 2006·Granted Mar 27, 2012·5 cites·19 claims
- 0873US7564091B2Memory device and methods for its fabricationSPANSION LLC·Filed 2008·Granted Jul 21, 2009·4 cites·5 claims
- 0972US11830942B2Contacts for semiconductor devicesCYPRESS SEMICONDUCTOR CORP·Filed 2021·Granted Nov 28, 2023·0 cites·19 claims
- 1071US7675104B2Integrated circuit memory system employing silicon rich layersSPANSION LLC·Filed 2006·Granted Mar 9, 2010·3 cites·10 claims
- 1170US10516044B2Contacts for semiconductor devicesCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Dec 24, 2019·1 cites·20 claims
- 1268US12051469B2Method and apparatus to mitigate hot electron read disturbs in 3D nand devicesIntel NDTM US LLC·Filed 2022·Granted Jul 30, 2024·0 cites·18 claims
- 1368US8564041B2Contacts for semiconductor devicesHUI ANGELA T·Filed 2006·Granted Oct 22, 2013·3 cites·20 claims
- 1467US10944000B2Contacts for semiconductor devicesCYPRESS SEMICONDUCTOR CORP·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 1561US7704878B2Contact spacer formation using atomic layer depositionADVANCED MICRO DEVICES INC·Filed 2005·Granted Apr 27, 2010·2 cites·22 claims
- 1659US11355199B2Method and apparatus to mitigate hot electron read disturbs in 3D NAND devicesINTEL CORP·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 1759US8854067B2Circular transmission line methods compatible with combinatorial processing of semiconductorsJOSHI AMOL·Filed 2012·Granted Oct 7, 2014·1 cites·12 claims
- 1856US9224644B2Method to control depth profiles of dopants using a remote plasma sourceINTERMOLECULAR INC·Filed 2012·Granted Dec 29, 2015·0 cites·12 claims
- 1954US9276007B2System and method for manufacturing self-aligned STI with single polySPANSION LLC·Filed 2014·Granted Mar 1, 2016·0 cites·12 claims
- 2052US7705390B2Dual bit flash memory devices and methods for fabricating the sameSPANSION LLC·Filed 2008·Granted Apr 27, 2010·0 cites·6 claims
- 2152US2015064361A1UV treatment for ALD film densificationINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 2251US7995386B2Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturbSPANSION LLC·Filed 2008·Granted Aug 9, 2011·2 cites·20 claims
- 2350US10622370B1System and method for manufacturing self-aligned STI with single polyMONTEREY RES LLC·Filed 2015·Granted Apr 14, 2020·0 cites·16 claims
- 2449US9312137B2Reduction of native oxides by annealing in reducing gas or plasmaINTERMOLECULAR INC·Filed 2013·Granted Apr 12, 2016·0 cites·20 claims
- 2549US2014061771A1Memory Device with Charge TrapSPANSION LLC·Filed 2013·Application pending·0 cites
- 2645US8183623B2Dual charge storage node memory device and methods for fabricating such deviceLEE CHUNGHO·Filed 2011·Granted May 22, 2012·0 cites·11 claims
- 2744US2016181380A1Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the SameINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 2844US2008150011A1Integrated circuit system with memory systemSPANSION LLC·Filed 2007·Application pending·0 cites
- 2943US8685829B1Method for forming MOS capacitorINTERMOLECULAR INC·Filed 2012·Granted Apr 1, 2014·0 cites·17 claims
- 3043US8642441B1Self-aligned STI with single poly for manufacturing a flash memory deviceTHURGATE TIM·Filed 2006·Granted Feb 4, 2014·0 cites·12 claims
- 3143US8587049B2Memory cell system with charge trapDING MENG·Filed 2006·Granted Nov 19, 2013·0 cites·10 claims
- 3242US2015380309A1Metal-insulator-semiconductor (MIS) contact with controlled defect densityINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 3342US2015187664A1High Productivity Combinatorial Testing of Multiple Work Function Materials on the Same Semiconductor SubstrateINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 3441US2016093711A1Tantalum carbide metal gate stack for mid-gap work function applicationsINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 3541US2015093887A1Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuitsiGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 3641US2008142874A1Integrated circuit system with implant oxideSPANSION LLC·Filed 2006·Application pending·0 cites
- 3741US2008032464A1Memory cell system with nitride charge isolationSPANSION LLC·Filed 2006·Application pending·0 cites
- 3841US2008150000A1Memory system with select gate eraseSPANSION LLC·Filed 2006·Application pending·0 cites
- 3940US2008032475A1Memory cell system with gradient charge isolationSPANSION LLC·Filed 2006·Application pending·0 cites
- 4040US2014162384A1PVD-ALD-CVD hybrid HPC for work function material screeningINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 4140US2015140838A1Two Step Deposition of High-k Gate Dielectric MaterialsINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4240US2008079061A1Flash memory cell structure for increased program speed and erase speedSPANSION LLC·Filed 2006·Application pending·0 cites
- 4339US2015093914A1Methods for depositing an aluminum oxide layer over germanium susbtrates in the fabrication of integrated circuitsIntermolecular·Filed 2013·Application pending·0 cites
- 4438US2015093889A1Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuitsIntermolecular·Filed 2013·Application pending·0 cites
- 4536US2014008763A1Distributed substrate top contact for moscap measurementsMUJUMDAR SALIL·Filed 2012·Application pending·0 cites
- 4636US2014099785A1Sacrificial Low Work Function Cap LayerINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →