Inventor · disambiguated record
Ryouichi Furukawa
Also filed as: FURUKAWA RYOUICHI
6 granted patents·3 pending applications·82 citations·filing 1999–2004
83Inventor score
Top patents by PatentIndex Score
9 records- 0178US6770528B2Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrateHITACHI ULSI SYS CO LTD·Filed 2003·Granted Aug 3, 2004·23 cites·9 claims
- 0269US6717202B2HSG semiconductor capacitor with migration inhibition layerRENESAS TECH CORP·Filed 2002·Granted Apr 6, 2004·15 cites·25 claims
- 0364US6576946B1Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrateHITACHI LTD·Filed 1999·Granted Jun 10, 2003·24 cites·6 claims
- 0458US6524927B1Semiconductor device and method of fabricating the sameHITACHI LTD·Filed 1999·Granted Feb 25, 2003·17 cites·21 claims
- 0549US6444405B1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrateHITACHI LTD·Filed 2000·Granted Sep 3, 2002·3 cites·2 claims
- 0641US2004195611A1Semiconductor integrated circuit device and manufacturing method thereofRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 0740US2004214428A1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrateRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 0838US6746913B2Method of manufacturing semiconductor integrated circuit device comprising a memory cell and a capacitorRENESAS TECH CORP·Filed 2002·Granted Jun 8, 2004·0 cites·10 claims
- 0938US2002098678A1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrateHITACHI LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →