Inventor · disambiguated record
Wenge Yang
Also filed as: YANG WENGE
33 granted patents·735 citations·filing 1997–2023
98Inventor score
Files withADVANCED MICRO DEVICES INC29HPSTAR BEIJING1SPANSION LLC1TIMBRE TECH INC1TOKYO ELECTRON LTD1
Top patents by PatentIndex Score
33 records- 0196US6372651B1Method for trimming a photoresist pattern line for memory gate etchingADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 16, 2002·220 cites·5 claims
- 0284US6306713B1Method for forming self-aligned contacts and local interconnects for salicided gates using a secondary spacerADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 23, 2001·40 cites·20 claims
- 0383US6482699B1Method for forming self-aligned contacts and local interconnects using decoupled local interconnect processADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 19, 2002·37 cites·18 claims
- 0480US6416933B1Method to produce small space pattern using plasma polymerization layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 9, 2002·56 cites·33 claims
- 0573US6878622B1Method for forming SAC using a dielectric as a BARC and FICD enlargerADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 12, 2005·16 cites·10 claims
- 0671US6365509B1Semiconductor manufacturing method using a dielectric photomaskADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 2, 2002·18 cites·12 claims
- 0771US5973353AMethods and arrangements for forming a tapered floating gate in non-volatile memory semiconductor devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 26, 1999·30 cites·11 claims
- 0868US5948703AMethod of soft-landing gate etching to prevent gate oxide damageADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 7, 1999·34 cites·17 claims
- 0967US6348406B1Method for using a low dielectric constant layer as a semiconductor anti-reflective coatingADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 19, 2002·11 cites·16 claims
- 1067US6136649AMethod for removing anti-reflective coating layer using plasma etch process after contact CMPADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 24, 2000·32 cites·20 claims
- 1165US6359307B1Method for forming self-aligned contacts and interconnection lines using dual damascene techniquesADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 19, 2002·13 cites·5 claims
- 1265US5977601AMethod for etching memory gate stack using thin resist layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 2, 1999·25 cites·4 claims
- 1364US6271154B1Methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profileADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 7, 2001·28 cites·16 claims
- 1462US6596623B1Use of organic spin on materials as a stop-layer for local interconnect, contact and via layersADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 22, 2003·8 cites·13 claims
- 1559US7566181B2Controlling critical dimensions of structures formed on a wafer in semiconductor processingTOKYO ELECTRON LTD·Filed 2004·Granted Jul 28, 2009·7 cites·24 claims
- 1659US6159860AMethod for etching layers on a semiconductor wafer in a single etching chamberADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 12, 2000·23 cites·5 claims
- 1756US6515328B1Semiconductor devices with reduced control gate dimensionsADVANCED MICRO DEVICES INC·Filed 1999·Granted Feb 4, 2003·20 cites·10 claims
- 1855US6383939B1Method for etching memory gate stack using thin resist layerADVANCED MICRO DEVICES INC·Filed 1999·Granted May 7, 2002·16 cites·21 claims
- 1954US12180086B2Method for improving conductivity and blue light filtering efficiency of transparent conducting oxide (TCO)HPSTAR BEIJING·Filed 2023·Granted Dec 31, 2024·0 cites·8 claims
- 2054US6645824B1Combined optical profilometry and projection microscopy of integrated circuit structuresTIMBRE TECH INC·Filed 2002·Granted Nov 11, 2003·11 cites·33 claims
- 2154US6291296B1Method for removing anti-reflective coating layer using plasma etch process before contact CMPADVANCED MICRO DEVICES INC·Filed 1999·Granted Sep 18, 2001·18 cites·24 claims
- 2254US6110779AMethod and structure of etching a memory cell polysilicon gate layer using resist mask and etched silicon oxynitrideADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 29, 2000·15 cites·14 claims
- 2352US6534411B1Method of high density plasma metal etchingADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 18, 2003·3 cites·17 claims
- 2452US6376389B1Method for eliminating anti-reflective coating in semiconductorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 23, 2002·5 cites·8 claims
- 2551US7217652B1Method of forming highly conductive semiconductor structures via plasma etchSPANSION LLC·Filed 2001·Granted May 15, 2007·3 cites·7 claims
- 2649US6074956AMethod for preventing silicide residue formation in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·14 cites·5 claims
- 2747US6627526B1Method for fabricating a conductive structure for a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 30, 2003·1 cites·14 claims
- 2847US6423612B1Method of fabricating a shallow trench isolation structure with reduced topographyADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 23, 2002·2 cites·5 claims
- 2946US6159794AMethods for removing silicide residue in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 12, 2000·12 cites·19 claims
- 3044US6420240B1Method for reducing the step height of shallow trench isolation structuresADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 16, 2002·1 cites·10 claims
- 3141US6452225B1Method and structure of etching a memory cell polysilicon gate layer using resist mask and etched silicon oxynitrideADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 17, 2002·3 cites·4 claims
- 3239US6218310B1RTA methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profileADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 17, 2001·7 cites·20 claims
- 3329US6207575B1Local interconnect etch characterization using AFMADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·6 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →